Crack deflection at an interface between dissimilar elastic-materials

A crack intersecting an interface between two dissimilar materials may advance by either penetrating through the interface or deflecting into the interface. The competition between deflection and penetration can be assessed by comparison of two ratios: (i) the ratio of the energy release rates for interface cracking and crack penetration; and (ii) the ratio of interface to material fracture energies. Residual stresses caused by thermal expansion misfit can influence the energy release rates of both the deflected and penetrating crack. This paper analyses the role of residual stresses. The results reveal that expansion misfit can be profoundly important in systems with planar interfaces (such as layered materials, thin film structures, etc.), but generally can be expected to be of little significance in fiber composites. This paper corrects an earlier result for the ratio of the energy release rate for the doubly deflected crack to that for the penetrating crack in the absence of residual stress.

高分辨率光纤光栅温度传感器的研究

报道了一种具有高分辨率和高效且价廉的解调系统的光纤布拉格光栅(FBG)温度传感器。提出了光纤光栅的金属槽封装技术，以提高传感光栅的温度灵敏性。研究了金属槽封装光栅的温度灵敏性，理论分析和实验结果表明，封装光栅的温度灵敏系数比普通裸光栅提高了3．6倍。系统利用一长周期光栅(LPG)作为线性滤波器，宽带光源经此长周期光栅调制后入射到传感光栅，可解调布拉格传感光栅的波长位移。理论分析与实验结果一致，系统可达到的温度分辨率为0．02℃。

光纤光栅高温传感器的研究

提出了一种能够测量高温的光纤布拉格光栅（FBG）传感器结构。利用线膨胀系数和长度均不同的两种金属细杆和光纤布拉格光栅设计而成的传感头，能够将被测温度转化为光栅的应变，解调由应变引起的光栅波长漂移，即可得知待测的温度。目前在实验室实现了500℃的动态范围和1℃的温度分辨率，实验结果与理论分析一致。

A novel fiber Bragg grating high-temperature sensor

A novel fiber Bragg grating (FBG) sensor for the measurement of high temperature is proposed and experimentally demonstrated. The interrogation system of the sensor system is simple, low cost but effective. The sensor head is comprised of one FBG and two metal rods. The lengths of the rods are different from each other. The coefficients of thermal expansion of the rods are also different from each other. The FBG will be strained by the sensor head when the temperature to be measured changes. The temperature is measured basis of the wavelength shifts of the FBG induced by strain. A dynamic range of 0-800 degrees C and a resolution of 1 degrees C have been obtained by the sensor system. The experiment results agree with theoretical analyses. (c) 2007 Elsevier GmbH. All rights reserved.

Wideband two-port beam splitter of a binary fused-silica phase grating

The usual beam splitter of multilayer-coated film with a wideband spectrum is not easy to achieve. We describe the realization of a wideband transmission two-port beam splitter based on a binary fused-silica phase grating. To achieve high efficiency and equality in the diffracted 0th and -1st orders, the grating profile parameters are optimized using rigorous coupled-wave analysis at a wavelength of 1550 nm. Holographic recording and the inductively coupled plasma dry etching technique are used to fabricate the fused-silica beam splitter grating. The measured efficiency of (45% x 2) = 90% diffracted into the both orders can be obtained with the fabricated grating under Littrow mounting. The physical mechanism of such a wideband two-port beam splitter grating can be well explained by the modal method based on two-beam interference of the modes excited by the incident wave. With the high damage threshold, low coefficient of thermal expansion, and wideband high efficiency, the presented beam splitter etched in fused silica should be a useful optical element for a variety of practical applications. (C) 2008 Optical Society of America.

混合碱效应对磷酸盐包边玻璃性质的影响

高功率大尺寸激光玻璃硬包边技术对于提高激光玻璃的饱和增益系数具有非常重要的价值。本文采用传统的玻璃熔制方法，研究了Li-Na混合碱效应对磷酸盐包边玻璃折射率、热膨胀系数α、玻璃转变温度Tg、膨胀软化温度Td以及溶解速率（DR）的影响规律。研究结果表明：当Li/(Li+Na)=0.5时，Tg、Td和DR取得极小值，表明混合碱效应既能降低包边玻璃的转变温度，又能提高包边玻璃的化学稳定性，这些性质对于包边玻璃的设计是非常可贵的。

高硅氧发光玻璃的制备及其荧光性能

abstract {Silica glass is an attractive host matrix for the emission ions of rare earth and transition metal ions because it has small thermal expansion coefficient, strong thermal resistance, large fracture strength and good chemical durability and so on. However, a major obstacle to using it as the host matrix is a phenomenon of concentration quenching. In this paper, we introduces a novel method to restrain the concentration quenching by using a porous glass with SiO₂ content > 95% (in mass) and prepare intense fluorescence high-SiO₂ glasses and high-SiO₂ laser glass. The porous glass with high-SiO₂ content was impregnated with rare-earth and transition metal ions, and consequently sintered into a compact non-porous glass in reduction or oxidization atmospheres. Various intense fluorescence glasses with high emission yields, a vacuum ultraviolet-excited intensely luminescent glass, high silica glass containing high concentration of Er³⁺ ion, ultrabroad infrared luminescent Bi-doped high silica glass and Nd³⁺-doped silica microchip laser glass were obtained by this method. The porous glass is also favorable for co-impregnating multi-active-ions. It can bring effective energy transferring between various active ions in the glass and increases luminescent intensity and extend range of excitation spectrum. The luminescent active ions-doped high-SiO₂ glasses are potential host materials for high power solid-state lasers and new transparent fluorescence materials.}

不同氧磷比对磷酸盐包边玻璃性质的影响规律

包边技术是提高大尺寸激光玻璃饱和增益系数的关键技术。采用传统的方法熔制玻璃,研究了 P2O5含量对 P2O5-Al2O3-B2O3-CuCl-Na2O-ZnO磷酸盐包边玻璃的折射率、热膨胀系数、玻璃转变温度、膨胀软化温度以及化学稳定性的影响。结果表明：当 P2O5的摩尔分数为 60%左右,玻璃样品具有最高的折射率（1.522 0）、最低的玻璃转变温度（352.4 ℃）、较好的化学稳定性[0.52 mg/（cm^2·d）]和适宜的热膨胀系数（128.427×10^-7/℃）,是用作钕磷酸盐激光玻璃硬包边的理

微晶玻璃在大功率脉冲氙灯封接中的应用

：为提高大功率脉冲氙灯的封接强度，将微晶玻璃作为封接材料引入到氙灯封接应用中. 以 Bi2O3,ZnO,Al2O3,MgO,CaCO3,SiO2,BaO,H3BO3,P2O5,Na2O 为原料，通过高温熔融制备了大功率脉冲氙灯封接 用微晶玻璃样品. 测试了样品的热膨胀系数,并通过差热分析(Differential Thermal Analysis，DTA)对脉冲氙灯 微晶玻璃的封接温度进行了讨论，用X 射线衍射(X-ray diffraction ，XRD)表征了封接玻璃，并进行了分析. 将 制得的样品磨成玻璃粉末，制成膏剂状玻璃焊料，对大功率脉冲氙灯进行封接，得到大功率脉冲氙灯的微晶 玻璃封接件. 通过氦质谱检漏仪检测，1#、2#、4#封接件气密性良好，达到10-6 Pa.

Crystal growth and properties of Yb : FAP laser crystal

A large and transparent Yb:FAP crystal with dimensions up to circle divide 30 mm x 85 mm has been grown by the Czochralski method. The preparation of the raw material has been investigated. X-ray power diffraction studies of Yb:FAP crystal confirm that the as-grown crystal is isostructural with the FAP crystal. The crystalline quality has been studied using X-ray rocking curve analysis. The segregation coefficient of Yb3+ in the Yb:FAP crystal has been also determined. Linear thermal expansion coefficients in [001] and [100] directions have been measured in the 30-800 degrees C temperature range. (c) 2005 Elsevier B.V. All rights reserved.

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LIAlO2晶体，但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量．采用气相传输平衡法（vapor transport equilibration technique，VTE）工艺对晶体改性，半高宽（FWHM）值从116．9arcsec降至44．2arcsec，继续升高VTE处理温度至1300℃，FWHM值反而升高至55．2arcsec．快速提拉法生长出来晶体，[100]方向和[001]方向的热膨胀系数分别为17．2398×10^-6／K，10．7664×10

Defects in LPE-grown beta-barium borate (beta-BaB2O4) thin films

Morphological defects in beta-barium borate (beta-BBO) thin films grown on Sr2+ -doped alpha-BBO substrates by liquid phase epitaxy (LPE) technique were studied by scanning electron micrograph (SEM), atomic force microscopy (AFM) and optical spectroscopy. The present results indicate that the main defects exit in beta-BBO thin films are microcracks and hollow structure. The formation of microcrack is due to the lattice mismatch and the difference of thermal expansion coefficients between substrate and film. The hollow structure might be caused during the combination of islands, which formed in the initial stage. (C) 2006 Elsevier GmbH. All rights reserved.

LBO晶体上1064，532nm倍频增透膜的镀制及性能分析

用电子束蒸发沉积方法在X切LBO（X-LBO）晶体上镀制了两种不同膜系结构的1064和532nm倍频增透膜，其中一种膜系结构为基底／ZrO2／Y2O3／A12O3／SiO2／空气，另一种为基底／0．5Al2O3／ZrO2／Y2O3／A12O3／SiO2／空气，两种膜系结构的主要差别在于有无氧化铝过渡层。测量了薄膜的反射率光谱曲线，发现两种增透膜在1064和532nm处的反射率均小于0．5％，实际镀制结果与理论设计曲线的差异主要是由材料折射率的变化引起的。且对样品在空气环境中进行了温度为473K的退火处理，

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Comment on

In a recent letter, Hsieh reported the growth of high-quality Ge epilayers with a SiGe buffer thickness of only 0.45 mu m, a surface root-mean-square roughness of less than 0.4 nm, and a threading dislocation of 7.6 x 10(6) cm(-2) on Si+ pre-ion-implantation Si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. Our comment has focused on x-ray diffraction data shown in Fig. 3 of Ref. 1. We demonstrate that the strain in Ge epilayers is tensile, rather than compressive as misunderstood by the authors. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003873]