73 resultados para Sun: atmosphere


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In this study we report on surface crystallization phenomena and propose a solution for the fabrication of long and robust tellurite glass fibers. The bulk tellurite glasses of interest were prepared by melting and quenching techniques. Tellurite glass preforms and fibers were fabricated by suction casting and rod-in-tube drawing methods, respectively. The surfaces of the tellurite bulk glass samples and of the drawn fibers prepared under different controlled atmospheres were examined by X-ray diffraction. When the tellurite glass fibers were drawn in ambient air containing water vapor, four primary kinds of small crystals were found to appear on the fiber surface, alpha-TeO(2), gamma-TeO(2), Zn(2)Te(3)O(8) and Na(2)Zn(3)(CO(3))(4)center dot 3H(2)O. A mechanism for this surface crystallization is proposed and a solution described, using an ultra-dry oxygen gas atmosphere to effectively prevent surface crystallization during fiber drawing. (C) 2010 Elsevier B.V. All rights reserved.

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We report laser-generated plasmas in atmosphere with electrical spark generated by a synchronization circuit. The breakdown thresholds under the conditions that the electrical spark is used and not used are compared. The breakdown threshold has a distinct decrease after the electrical spark is used. Breakdown thresholds as a function of atmosphere pressure have also been measured at laser wavelengths 532 nm and 1064 rim for the laser pulse width of 15ns. We also discuss the principle and performances of the ionized atmosphere by Nd:YAG laser under the condition of electrical spark introduction. Multiphoton ionization and cascade ionization play important roles in the whole process of atmosphere ionization. The free electron induced by electrical spark can supply the initialization free electron number for multiphoton ionization and cascade ionization. A model for breakdown in atmosphere, which is in good agreement with the experimental results, is described.

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Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 me V below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.

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The oxidation dynamics and morphology of undoped and heavily phosphorus-doped polycrystalline silicon films oxidized at a wide temperature and time range in dry and wet O2 atmosphere have been investigated. It is shown that the oxidation rates of polycrystalline silicon films are different from that of single-crystal silicon when the oxidation temperature is below 1000-degrees-C. There is a characteristic oxidation time, t(c), under which the undoped polysilicon oxide is not only thicker than that of (100)-oriented single-crystal silicon, but also thicker than that of (111)-oriented single-crystal silicon. For phosphorus-doped polycrystalline silicon films, the oxide thickness is thinner not only than that of (111)-oriented, single-crystal silicon, but also thinner than that of (100)-oriented, single-crystal silicon. According to TEM cross-sectional studies, these characteristics are due to the enhanced oxidation at grain boundaries of polycrystalline silicon films. A stress-enhanced oxidation model has been proposed and used to explain successfully the enhanced oxidation at grain boundaries of polycrystalline silicon films. Using this model, the oxidation linear rate constant of polysilicon (B/A)poly has been calculated and used in the modeling of the oxidation dynamics. The model results are in good agreement with the experimental data over the entire temperature and time ranges studied.