Mechanical and structural characteristics of phenolphthalein poly(ether sulfone) ultra-high molecular weight polyethylene blends

Mechanical and structural properties of blends of phenolphthalein poly(ether sulfone) (PBS-C) with ultra-high molecular weight polyethylene (UHMWPE) were investigated using tensile and bending testing, scanning electron microscopy and transition electron microscopy. The incorporation of minor amounts of UHMWPE (2 wt.-%) into PES-C has a reinforcement effect. With higher concentrations of UHMWPE, the mechanical properties decrease gradually. Structural studies demonstrated that the blends are multiphasic in the whole composition range. The minor UHMWPE, dispersed uniformly and oriented along the flow direction, as well as the strong interfacial adhesion contribute to the increase of the mechanical performance of the blends. The domain size of the UHMWPE phase was found to increase with the increase of its concentration.

Hydrothermal synthesis and lanthanide doping of complex fluorides, LiYF4, KYF4 and BaBeF4 under mild conditions

The complex fluorides LiYF4, KYF4, BaBeF4 and AYF(4)Eu(x) (A = Li, K) are hydrothermally synthesized at 140-240 degrees C and characterized by powder X-ray diffraction, thermogravimetric analysis, IR spectroscopy, scanning electron microscopy and luminescence measurements.

The fabrication of dipped CdS and sputtered ITO thin films for photovoltaic solar cells

Stable bilayer thin films of indium tin oxide (ITO) on CdS and CdS on ITO were formed for the window material of solar cells by chemical bath and sputtering methods. Scanning electron microscopy and X-ray diffraction studies have shown that both the ITO and CdS films are continuous, homogeneous, with high compactness. Measurement of the CdS film thickness across the 2 x 4 cm(2) reveals the good uniformity of these films. Four-point probe measurements show that the resistivity of a CdS film on an ITO surface is much better than that of the single CdS film The thermal stability of an ITO/CdS bilayer, interfacial reaction and optical transmittance were investigated at different annealing temperatures and environments (air, vacuum and N-2 + H-2). The results showed that the ITO/CdS bilayer film is a good window material for the CuInSe2 and CdTe cells. It is a simple method using a small amount of the cadmium compound.

IN-SITU SCANNING TUNNELING MICROSCOPIC STUDY OF NICKEL ELECTRODEPOSITION ON HOPG

The early stages of the electrodeposition of nickel on highly oriented pyrolytic graphite (HOPG) were investigated by in situ scanning tunnelling microscopy, scanning electron microscopy and electrochemical measurements. Experimental results showed that t

STUDY OF A 1/12 PHOSPHOMOLYBDIC ANION DOPED POLYPYRROLE FILM ELECTRODE AND ITS CATALYSIS

A phosphomolybdic anion doped polypyrrole (PMo12O403- + PPy) film electrode has been prepared by electrochemical polymerization of pyrrole in an aqueous solution of 0.5 mol l-1 H2SO4 or 0.5 mol l-1 KNO3 containing PMo12O403- anions, and characterized by scanning electron microscopy and in-situ UV-visible spectroelectrochemical methods. The film electrode obtained is very stable upon potential cycling in acidic solution, but not in neutral solution. The catalytic effect of the film electrode on the reduction of ClO3- and BrO3- was studied.

In Situ Observations On The Fracture Process Of Metallic Glassy Ribbons

Crack propagation and strain field evolution in two metallic glassy ribbons are studied using in situ scanning electron microscopy and the white digital speckle correlation method. Strain state at the crack tip, which depends heavily on the fracture toughness, plays a key role in fracture. A high degree of shear strain concentration in tough glassy ribbon can satisfy the critical shear strain, resulting in shear fracture, whereas a high degree of linear strain concentration in brittle glassy ribbon can initiate normal tensile fracture. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Optical transfer of periodic microstructures by interfering femtosecond laser beams

We report on an optical interference method for transferring periodic microstructures of metal film from a supporting substrate to a receiving substrate by means of five-beam interference of femtosecond laser pulses. Scanning electron microscopy and optical microscopy revealed microstructures with micrometer-order were transferred to the receiving substrate. In the meanwhile, a negative copy of the transferred structures was induced in the metal film on the supporting substrate. The diffraction characteristics of the transferred structures were also evaluated. The present technique allows one-step realization of functional optoelectronic devices. (C) 2005 Optical Society of America.

Yb：Ca5（PO4）3F激光晶体的生长缺陷

采用提拉法生长了质量优异的Yb：Ca5（PO4）2F（Yb：FAP）晶体。运用化学腐蚀，光学显微镜、扫描电子显微镜以及能量散射光谱仪观察了该晶体中的生长条纹和包裹物等宏观缺陷，以及晶体的位错腐蚀形貌、位错密度及其分布情况，同时观察了晶体中亚晶界的形态。由晶体中位错的径向变化以及生长条纹可知：晶体在生长过程中为微凸界面生长。高温下CaF2的挥发造成了在晶体生长后期熔体中组分偏离化学计量比，出现组分过冷，形成包裹物。且位错密度显著增加。Yb：FAP晶体的各向异性使得晶体在（10 10）面的位错蚀坑形状、大小以

Study on freshwater genus Peridinium (Dinophyta) from China

Peridinium is an important genus of freshwater armoured dinoflagellates with two more intercalary plates (sensu Bourrelly). A few species of Peridinium were known from China heretofore. The plate pattern is one of the important criteria for the taxonomy of Peridinium, and it was difficult to visualize their plate patterns under normal light microscope. For editing of Flora Algarum Sinicarum Aquae Dulcis, 11 species of Peridinium collected from various freshwater habitats of China are described. Among them, 6 species are first reported from China. They are P. gatunense Nygaard, P. gutwinskii Woloszynska, P. lomnickii Woloszynska, P. palatinum Lauterborn, P. striolatum Playfair, and P. zonatum Playfair. Epifluorescence microscopy and scanning electron microscopy, and also light microscopy were employed for their structure and patterns of thecal plates.

Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C.

Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure

A buried grating structure with a selectively grown absorptive InGaAsP layer was fabricated and characterized by scanning electron microscopy and photoluminescence. The InP corrugation was etched by introducing a SiO2 mask that was more stable than a conventional photoresist mask during the etching process. Moreover, the corrugation was efficaciously preserved during the selective growth of the absorptive layer with the SiO2 mask. Though this absorptive layer was only selectively grown on the concave region of the corrugation, it has a high intensity around the peak wavelength in comparison with that of InGaAlAs multiple quantum well, which was grown on the buried grating structure.

InN nanoflowers grown by metal organic chemical vapor deposition

Hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. The sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. With the aid of hydrogen, a stable existence of metallic indium is achieved. This will induce the growth of InN nanoflowers via self-catalysis vapor-liquid-solid (VLS) process. It is found that the VLS process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and InN, which leads to the special morphology of the authors' InN nanoflower pattern. (c) 2006 American Institute of Physics.

Thermal annealing behaviour of Pt on n-GaN Schottky contacts

The structural evolution and temperature dependence of the Schottky barrier heights of Pt contacts on n-GaN epilayer at various annealing temperatures were investigated extensively by Rutherford backscattering spectrometry, x-ray diffraction measurements, Auger electron spectroscopy, scanning electron microscopy and current-voltage measurements. The temperature dependence of the Schottky barrier heights may be attributed to changes of surface morphology of Pt films on the surface and variation of nonstoichiometric defects at the interface vicinity. Experimental results indicated the degradation of Pt contacts on n-GaN above 600 degreesC.

Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate

GaN films were grown in pairs on two opposite c faces of Al2O3 substrate by low-pressure metal-organic vapor phase epitaxy, and studied by scanning electron microscopy and converged beam electron diffraction. It is found that GaN film on the c-Al2O3 whose c face is forward to its crystal seed has [0001] polarity, and the other film on the C-Al2O3 whose c face is backward to its crystal seed has [000 (1) over bar] polarity. (C) 2001 American Institute of Physics.