Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

Pseudomorphic Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As (y1 greater than or equal to 0.52) modulation-doped heterostructures with an intentional nonlattice-matched buffer layer were successfully grown by molecular beam epitaxy on (100)InP substrates. Fourier transform photoluminescence and double crystal x-ray diffraction measurements show a superior crystalline quality in the high In content channel, when In mole fraction increases from y1=0.52 to 0.55 in the Iny1Al1-y1As buffer layer. In this case, an increasing of 16.3% and 23.5% for conductivity (mu xn(s)) and mobility, related to the strain compensation in the In0.73Ga0.27As channel, was achieved, respectively, comparing to the structure containing a well-lattice matched buffer layer. With increasing the mismatch further (y1=0.58), a morphology with cross-hatched pattern was observed due to the onset of a large amount of misfit dislocations, and the electronic characterization is not able to be improved continuously. Because we can realize high quality strained P-HEMTs in a relative wide range of equivalent beam flux (EBF) ratios, the stringent control over the constant EBF is not indispensable on this In-based material system. (C) 1997 American Vacuum Society.

High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer

When AlGaN is grown on GaN template, crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the At mole fraction was high.

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector

In this paper, the detection wavelength and the electron-hole wave function overlap of InAs/IrxGa1-xSb type II superlattice photodetectors are numerically calculated by using the envelope function and the transfer matrix methods. The band offset is dealt with by employing the model solid theory, which already takes into account the lattice mismatch between InAs and InxGa1-xSb layers. Firstly, the detection wavelength and the wave function overlap are investigated in dependence on the InAs and InxGa1-xSb layer thicknesses, the In mole fraction, and the periodic number. The results indicate that the detection wavelength increases with increasing In mole fraction, InAs and InxGa1-xSb layer thicknesses, respectively. When increasing the periodic number, the detection wavelength first increases distinctly for small periodic numbers then increases very slightly for large period numbers. Secondly, the wave function overlap diminishes with increasing InAs and InxGa1-xSb layer thicknesses, while it enhances with increasing In mole fraction. The dependence of the wave function overlap on the periodic number shows the same trend as that of the detection wavelength on the periodic number. Moreover, for a constant detection wavelength, the wave function overlap becomes greater when the thickness ratio of the InAs over InxGa1-xSb is larger.

Study on the kinetics of hydrate formation in a bubble column

Gas hydrate formation experiments were performed using methane in the presence of tetrahydrofuran (THF) in aqueous solution in a transparent bubble column in which a single pipe or a sintered plate was used to produce bubbles. The mole fraction of THF in aqueous solution was fixed at 6%. The hydrate formation kinetic behaviors on the surface of the rising bubble, the mechanical stability of hydrate shell formed on the surface of the bubble, the interactions among the bubbles with hydrate shell were observed and investigated morphologically. The rise velocities of individual bubbles with hydrate shells of different thickness and the consumption rates of methane gas were measured. A kinetic model was developed to correlate the experimentally measured gas consumption rate data. It was found that the hydrate formation rate on the surface of the moving bubble was high, but the formed hydrate shell was not very easy to be broken up. The bubbles with hydrate shells tended to agglomerate rather than merge into bigger bubble. This kind of characteristic of hydrate shell hindered the further formation of hydrate and led to the lower consumption rate of methane. The consumption rate of methane was found to increase with the decrease of temperature or increase of pressure. The increase of gas flux led to a linear increase in consumption rate of methane. It was demonstrated that the developed kinetic model could be used to correlate the consumption rate satisfyingly.

熔融氯化物电解制备NdFe、DyFe和DyAl合金的研究

本文对电解熔融氯化物制备稀土金属钕及钕铁、镝铁合金的电极过程及镝在镝铝合金中的扩散系数，用氯化物熔体电解制备钕铁合金的电解工艺，进行了系统研究。利用线性扫描伏安法（LSV）和计时电位法研究了Nd~(3+)，Dy~(3+)在等摩尔Kcl-NaCl熔体中，在Mo, Fe, Pt三种不同电极上的电极过程；还研究了在可耗铁电极上，电解制备NdFe合金的电解工艺；测定了Dy~(3+)在该熔体中的扩散系数及Dy原子在Al-Dy合金中的扩散系数。研究结果表明，Nd~(3+)在Mo电极上的反应接近于扩散控制的反应。为不可逆过程。反应是一步完成的，转移系数α为0.8。计时电位法证明，Nd同熔体具有较强烈地作用。Nd~(3+)在Fe电极上的反应二步进行。首先是Nd的析出，立即与Fe合金化生成NdFe合金。经X-射线衍射分析证明，合金组成为Nd_2Fe。由于合金化的结果，使Nd~(3+)的析出电位向正方向飘移。第二步反应是由于有大量的Nd析出，Nd向Fe电极内部的扩散已不足以使析出的Nd与Fe合金化，造成纯Nd的析出。由于Nd沉积在电极表面上，活度逐渐趋向于1，故Nd~(3+)的析出电位又向负方向飘移。由于合金化，反应的全过程为不可逆的，αn为0.55～0.65。NdFe合金电解工艺的研究表明，利用体系NdCl_3-Kcl·NaCl-LiF是合适的。LiF的加入有助于溶解电解质中的水不溶物，降低熔体的粘度。浓度和温度对合金化影响较大。深度过高，则有大量纯Nd析出。由于Nd同熔体作用强烈，对电解不利。浓度太低，则金属Na易析出导致电流效率降低。温度高，有利于合金化；但合金中Nd的含量过高且电解质挥发严重；并且Nd同熔体的作用更强烈了。控制电解温度在750～800 ℃，有利于形成合金。我们得到最佳电解工艺条件为：当温度在750～760 ℃时；电流密度在10～13安培/厘米~2；NdCl_3浓度为30%(wt)时，电流效率达最大值为56%。利用LSV和计时电位法对Dy~(3+)在Mo电极上的电极过程进行研究的结果表明，Dy~(3+)在Mo电极上的反应为一步生成金属的反应。反应是扩散控制的可逆过程。反应式为Dy~(3+) + 3e = Dy。利用扫描电镜进一步证实了这个结果。计时电位法测得了Dy~(3+)在该熔体中的扩散系数D与温度下的关系为LgD = 1.65 - 7376/T ± 0.34。同Nd比较，Dy同熔体的作用不很强烈。Dy~(3+)在Mo电极上的电极过程很好地符合可逆反应的规律。LSV方法研究Dy~(3+)在Pt，Fe电极上的电极过程表明，Dy~(3+)在Pt电极上的反应分二步进行。第一步反应为扩散控制的可逆反应。用卷积积分计算出第一步反应的转移电子数为1。与利用扩散方程计算的结果一致。所以，Dy~(3+)在Pt电极上的反应为，Dy~(3+) + e = Dy~(2+) ，Dy~(2+) + 2e = Dy。Dy~(3+)在Fe电极上的反应为不可逆过程。反应为一步还原为金属的反应。阳极溶解伏安曲线表明，Dy在低于800 ℃不与Fe形成合金。在Fe为电极制备DyFe合金，电解温度选择在900 ℃左右为宜。利用阳极计时电位法测定了Dy在Al-Dy合金中的扩散系数。结果表明，Dy在合金内部向合金表面的扩散为阳极溶解反应的控制步骤。测得扩散系数同温度的关系为LgD = 5.81 - 10662/T ± 0.51。(700～850 ℃)扩散活化能为204.1 kJ/mole。较高的活化能说明Dy在Al-Dy合金中的扩散相当困难。

三氧化硫直接磺化DDB宏观动力学

精确定量地设计一个高效的直接磺化反应器需要基础反应动力学和发生于界面处的热量和质量传递过程的知识，然而，到目前为止还没有人对三氧化硫直接磺化DDB的动力学进行系统的研究。本文在气液搅拌式反应器中研究了该反应的动力学特性并且通过在420nm处吸光度的测定探讨了反应条件对产品着色速率的影响。结果表明：该反应相对于DDB和SO_3的反应级数分别为1和2，反应活化能E = 70.6 kJ/mole，指前因子A = 6.97 * 10~(13)，反应温度和气相SO_3的浓度是影响产品着色的重要因素。

Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD

The deep centers in AlGaAs/GaAs graded index-separate confinement heterostructure single quantum well (GRIN-SCHSQW) laser structures grown by MBE and MOCVD have been investigated using deep level transient spectroscopy (DLTS) technique, The majority and minority carrier DLTS spectra show that the deep (hole and electron) traps (Hi and E3), having large capture cross sections and concentrations, are observed in the graded n-AlxGa1-xAs layer of laser structures in addition to the well-known DX centers. For laser structures grown by MBE, the deep hole trap H1 and the deep electron trap E3 may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the n-AlxGa1-xAs layer with x = 0.20-0.43. For laser structures grown by MOCVD, the deep electron trap E3 may be spatially localized in the n-AlxGa1-xAs layer with x = 0.18-0.30, and the DX center may be spatially localized in the interface regions of discontinuous variation Al mole fraction of the AlxGa1-xAs layer with x = 0.22-0.30.

RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content

A Si doped AlGaN/GaN HEMT structure with high Al content (x= 44%) in the barrier layer is grown on sapphire substrate by RF-MBE. The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement, respectively. The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.fabricated and characterized. Better DC characteristics, maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer. The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.

Growth of Fe doped semi-insulating InP by LP-MOCVD

The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semiinsulating InP material whose resistivity is equal to 2.0x10(8)Omega*cm and the breakdown field is Beater than 4.0x10(4)Vcm(-1) has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene (Fe(C5H5)(2)) flow constant at 620 degrees C growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency; eta, is equal to 8.7x10(-4) at 20mbar growth pressure and 620 degrees C growth temperature by the comparison of calculated and experimental results.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

5-氟尿嘧啶-β-环糊精结肠靶向前体药物的研究

5-氟尿嘧啶(5-Fluorouracil， 5-FU)是一种抗代谢药物，广泛用于临床治疗结直肠癌、胃癌、乳腺癌等多种癌症，但其首过代谢显著、亲脂性较低，选择性差、毒副作用大。为克服这些缺点人们对5-FU进行了大量的修饰工作，包括小分子修饰以及与各种载体形成微球、微囊、纳米粒、共价前药等。 环糊精(Cyclodextrin，简称CD)，可被结肠中的糖苷酶特异性地降解成小分子糖，而胃和小肠中由于缺乏相应的酶而使环糊精不被降解，这一特性在结肠药物的靶向输送及释放中有重要应用价值。环糊精中含有丰富的羟基，易进行化学修饰，将药物与环糊精通过共价键结合制成前药，使其在胃和小肠中不降解，而在盲结肠中被特异性的酶降解释出药物，达到结肠靶向释药的目的。研究表明，环糊精作为一种前药载体为结肠靶向释药和缓释、控释系统提供了一种有效的手段。 本工作选择5-氟尿嘧啶为模型药物、β-环糊精作为载体，通过中间体5-FU羧酸衍生物的制备及其与β-环糊精的偶联，合成了系列5-FU-β-CD前体药物，并利用紫外、红外、质谱、核磁、元素分析、热分析等手段对其进行结构表征。同时，还研究了前体药物的体外释药性质。具体内容包括： 1. 含有羧基的5-FU衍生物中间体的合成：(5-氟尿嘧啶-1-基)-乙酸(FUAC)、3-(5-氟尿嘧啶-1-基)-丙酸(FUPC)、5-(5-氟尿嘧啶-1-基)-戊酸(FUVC)的合成。 2. 中间体5-FU的羧酸衍生物与β-CD的偶联：分别通过以6-OTs-β-CD为中间体的取代法和活化酯法，合成了第一面取代和第二面取代的5-FU-β-CD大分子前体药物。在二面取代的前体药物制备中，通过改变原料的比例，合成了系列不同取代度(DS)的2-[(5-氟尿嘧啶-1-基)-乙酰基] -β-环糊精结合物。 3. 对上述前体药物进行体外释放研究：分别考察了前体药物在不同pH缓冲溶液中的水解行为及其在小鼠胃肠道人工体液中的酶解行为，并通过UV-Vis及HPLC对前体药物释放情况进行检测分析。 5-Fluorouracil(5-Fu), commonly known as a broad-spectrum antineoplastic drug, has been widely used in the treatment of various kinds of cancer including colon cancer for 40 years. However, this antitumor agent exhibits serious adverse effects, such as their marrow toxicity, gastrointestinal reaction and low selectivity in their clinical use. In order to improve its antitumor activity and reduce its toxicity, the compound was modified in various ways, including the formation of conjugated prodrugs with kinds of carrier, microsphere and nanoparticles etc. Cyclodextrins(CDs) are known to be barely capable of being hydrolyzed and only slightly absorbed in passing through the stomach and small intestine; however they are fermented into small saccharides by colonic microflora and thus absorbed as small saccharides in the large intestine. This biodegradation property of CDs may be useful as a colon-targeting carrier, and thus CD prodrugs may serve as a source of site-specific delivery of drugs to colon. It was demonstrated that prodrugs of CDs can provide a versatile means for construction of not only colon targeted delivery systems, but also delayed release systems. 5-Fluorouracil was taken as a model drug and β-CD as the carrier in this study. Series prodrugs of 5-FU was prepared through the preparation of reactive 5-FU derivatives containing carboxyl group and coupling to hydroxyl groups of CD. The structures of the conjugates were charactered by using IR, UV–vis, ESI-MS, 1H, 13C-NMR spectra, elemental analyses, and thermal analysis. In vitro hydrolysis behavior in aqueous solution and in rat gastrointestinal tract contents of the conjugates were also investigated. The main content of this dissertation includes following aspects: 1. The preparation of 5-FU derivatives containing carboxyl group: 5-Fluorouracil- acetic acid(FUAC)、3-(5-FU-1)-propionic acid (FUPC)、and 5-(5-FU-1)-valeric acid(FUVC). 2. The coupling of 5-FU derivatives to β-CD: 5-FU was selectively conjugated onto the primary or secondary hydroxyl groups of β-CD through an ester linkage, by the substitution of 6-OTs-β-CD and the activated ester method respectively. For the secondary face conjugation, the degree of substitution(DS) can be controlled by changing the mole ratio of the starting materials(FUAC and β-CD). 3. In vitro release behavior of the conjugates in aqueous solution and in rat gastro- intestinal tract contents of the conjugates were investigated, and the reaction was monitored and analyzed by using UV-Vis and HPLC methods.

Heat capacities and thermodynamic properties of chrysanthemic acid

The heat capacities of chrysanthemic acid in the temperature range from 80 to 400 K were measured with a precise automatic adiabatic calorimeter. The chrysanthemic acid sample was prepared with the purity of 0.9855 mole fraction. A solid-liquid fusion phase transition was observed in the experimental temperature range. The melting point, T-m, enthalpy and entropy of fusion, Delta(fus)H(m), Delta(fus)S(m), were determined to be 390.741 +/- 0.002 K, 14.51 +/- 0.13 kJ mol(-1), 37.13 +/- 0.34 J mol(-1) K-1, respectively. The thermodynamic functions of chrysanthemic acid, H-(T)-H-(298.15), S-(T)-S-(298.15) and G((T))-G((298.15)) were reported with a temperature interval of 5 K. The TG analysis under the heating rate of 10 K min(-1) confirmed that the thermal decomposition of the sample starts at ca. 410 K and terminates at ca. 471 K. The maximum decomposition rate was obtained at 466 K. The purity of the sample was determined by a fractional melting method.