Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

X-ray evidence for Ge/Si(001) island columns in multilayer structure

A Ge/Si(0 0 1) multilayer structure is investigated by cross-sectional transmission electron microscopy, atomic force microscopy and double crystal X-lay diffraction. We find that the multilayer-structure-related satellite peaks in the rocking curve exhibit a similar nonuniform broadening and rye fit the zero-order peak with two Lorentz lineshapes. The ratio of the integrated intensity of two peaks is approximately equal with the anal ratio of the top Ge layer deposited between the areas that are and are not occupied by islands. It proves the existence of vertical-aligned island columns from the viewpoint of macroscopic dimension. (C) 2001 Elsevier Science B.V. All rights reserved.

Structure and visible luminescence of ZnO nanoparticles

ZnO nanoparticles were synthesized in ethanolic solution using a sol-gel method. The structural and optical properties were investigated by X-ray diffraction, transmission electron microscopy, UV absorption, and photoluminescence. After annealing at 200 degrees C, the particle size is increased and the peak of defect luminescence in the visible region is changed. A yellow emission was observed in the as-prepared sample and a green emission in the annealed sample. The change of the visible emission is related to oxygen defects. Annealing in the absence of oxygen would increase oxygen vacancies. (c) 2006 Elsevier Ltd. All rights reserved.

Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs

We have measured low-temperature photoluminescence (PL) and optical absorption spectra of an In0.2Ga0.8As/GaAs multiple quantum well (MQW) structure at pressures up to 8 GPa. Below 4.9 GPa, PL shows only the emission of the n = 1 heavy-hole (HH) exciton. Three new X-related PL bands appear at higher pressures. They are assigned to spatially indirect (type-II) and direct (type-I) transitions from X(Z) states in GaAs and X(XY) valleys of InGaAs, respectively, to the HH subband of the wells. From the PL data we obtain a valence band offset of 80 meV for the strained In0.2Ga0.8As/GaAs MQW system. Absorption spectra show three features corresponding to direct exciton transitions in the quantum wells. In the pressure range of 4.5 to 5.5 GPa an additional pronounced feature is apparent in absorption, which is attributed to the pseudo-direct transition between a HH subband and the folded X(Z) states of the wells. This gives the first clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance at the heterointerfaces in MQWs.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

Resonant tunneling of holes in GaMnAs-related double- barrier structures

Using the multiband quantum transmitting boundary method (MQTBM), hole resonant tunneling through AlGaAs/GaMnAs junctions is investigated theoretically. Because of band-edge splitting in the DMS layer, the current for holes with different spins are tuned in resonance at different biases. The bound levels of the "light" hole in the quantum well region turned out to be dominant in the tunneling channel for both "heavy" and "light" holes. The resonant tunneling structure can be used as a spin filter for holes for adjusting the Fermi energy and the thickness of the junctions.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Structure and properties of InAs/AlAs quantum dots for broadband emission

The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy technique. The properties of materials and optics of such QD structures have been investigated by cross sectional transmission electron microscopy and photoluminescence (PL) techniques. It is discovered that the inhomogeneous strain filed mainly exists below InAs QDs layers in the case of no wetting layer. The full width at half maximums (FWHMs) and intensities of PL emission peaks of InAs QDs are found to be closely related to the thickness of the thin AlAs layers. The InAs QDs on an eight monolayer AlAs layer, with wide FWHMs and large integral intensity of PL emission peaks, are favorable for producing broadband QD superluminescent diodes, external-cavity QD laser with large tuning range.

Topological structure of the many vortices solution in Jackiw-Pi model

By using the gauge potential decomposition, we discuss the self-dual equation and its solution in Jackiw-Pi model. We obtain a new concrete self-dual equation and find relationship between Chern-Simons vortices solution and topological number which is determined by Hopf indices and Brouwer degrees of Psi-mapping. To show the meaning of topological number we give several figures with different topological numbers. In order to investigate the topological properties of many vortices, we use five parameters (two positions, one scale, one phase per vortex and one charge of each vortex) to describe each vortex in many vortices solutions in Jackiw-Pi model. For many vortices, we give three figures with different topological numbers to show the effect of the charge on the many vortices solutions. We also study the quantization of flux of those vortices related to the topological numbers in this case.

Structure stability and strengthening mechanism of die-cast Mg-Gd-Dy based alloy

Mg-8Gd-1Dy-0.3Zn (wt.%) alloy was prepared by high-pressure die-casting technique. The thermal stability, mechanical properties at temperature range from room temperature to 573 K and strengthening mechanism was investigated. The results showed that the die-cast state alloy was mainly composed of fine cellular equiaxed grain. The fine porosity-free skin region was related to the aggregation of rare earth elements. The long lamellar-shaped stacking compound containing Zn and polygon-shaped precipitate were observed along the grain boundaries. The die-cast sample exhibited high mechanical properties and good thermal stability until 523 K.

Structure and magnetic properties of new compounds CdYFeWO7

The solid solutions of CdYFeWO7, which are cubic pyrochlores of the type A(2)B(2)O(7), have been prepared and their structures were determined using Ab initio method. Rietveld refinement of the powder XRD data showed that CdYFeWO7 adopted cubic (Fd-3m) structure, while oxides crystallized in a defect-pyrochlore structure where both O (48f) and O'(8b) sites were partially occupied, and the frustrated cations sublattice precluded long range ordering of Fe/W in the pyrochlore structure. Charge distribution analysis also suggested incomplete occupation of different oxygen sites, thus the compound was non-stoichiometric, with the formula CdYFeW0.982O6.94, Magnetic measurements were carried out to find that Fe ions were in the high spin trivalent state. Curie Weiss paramagnetism down to similar to 5 K and the characteristic superposition between FC and ZFC suggested spin liquid rather than spin glass state.

1H-Pyrido[3,4-b]azepine-2,5(3H,4H)-dione: a hydrogen-bonded dimeric structure

In the asymmetric unit of the title compound, C9H8N2O2, there are two crystallographically independent molecules, each of which forms a dimer, via N-H center dot center dot center dot O hydrogen bonds, with an inversion-related molecule.

Phase identification in a series of liquid crystalline TPP polyethers and copolyethers having highly ordered mesophase structures. 6. Structure changes from smectic to columnar phases in a series of copolyethers containing odd and even numbers of methylene units in equal molar composition

A series of liquid crystalline copolyethers has been synthesized from 1-(4-hydroxy-4'-biphenyl)-2-(4-hydroxyphenyl)propane and different alpha,omega-dibromoalkanes [coTPP(n/m)]. In this report, coTPPs having n = 5, 7, 9, 11 and m = 12 are studied, which represent copolyethers having both varying odd number and a fixed even number of methylene units. The compositions were fixed at an equal molar ratio (50/50). These coTPPs(nlm) show multiple phase transitions during cooling and heating in differential scanning calorimetry experiments. The undercooling dependence of these transitions is found to be small, indicating that these transitions are close to equilibrium, Although the coTPPs possess a high-temperature nematic (N) phase, the periodicity order along the chain direction is increasingly disturbed when the length of the odd-numbered methylene units decreases from n 11 to 5. in the coTPPs(5/12, 7/12, and 9/12), wide-angle X-ray diffraction experiments at different temperatures show that, shortly after the N phase formation during cooling, the lateral molecular packing improves toward a hexagonal lattice, as evidenced by a gradual narrowing of the scattering halo. This process represents the possible existence of an exotic N phase, which serves as a precursor to the columnar (Phi(H)) phase. A further decrease in temperature leads to a (PH phase having a long-range ordered, two-dimensional hexagonal lattice. In coTPP(11/12), the phase structures are categorized as highly ordered and tilted, smectic and smectic crystal phases, similar to homoTPPs, such as the smectic F (S-F) and smectic crystal G (SCG) phases. An interesting observation is found for coTPP(9/12), wherein a structural change from the high-temperature Phi(H) phase to the low-temperature S-F phase occurs. It can be proven that, upon heating, the well-defined layer structure disappears and the lateral packing remains hexagonal. The overall structural differences in this series of coTPPs between those of the columnar and highly ordered smectic phases are related to the disorders introduced into the layer structure by the dissimilarity of the methylene unit lengths in the comonomers.

Crystal structure and drawing-induced polymorphism in poly(aryl ether ether ketone). IV

A new crystal modification induced by strain and denoted as form II exists alongside the dominant form I structure in the uniaxially oriented poly(ether ether ketone) (PEEK) and the related polymers. The crystal structure of form II for PEEK is also found to possess a two-chain orthorhombic packing with unit cell parameters of a equal to 0.475 nm, b equal to 1.060 nm, and c equal to 1.086 nm. More extended and flattened chain conformation of form II relative to that of form I is expected to account for an 8% increase in c-axis dimension, which is attributed to the extensional deformation fixed in situ through strain-induced crystallization during uniaxial drawing. Annealing experiments suggest that form II is thermodynamically metastable and can be transformed into more stable form I by chain relaxation and reorganization at elevated temperature without external tension. This strain-induced polymorphism exists universally in the poly(aryl ether ketone) family. (C) 1999 John Wiley & Sons, Inc.

Structure, electric and magnetic properties of new compounds CdYMWO7 (M = Cr and Mn)

Two new compounds with the formula of CdYMWO7 (M = Cr, Mn) were prepared by solid state reaction. They crystallized with orthorhombic structure with the cell parameters of a = 11.7200 Angstrom, b = 7.1779 Angstrom, c = 6.9805 Angstrom (CdYCrWO7), and a = 11.7960 Angstrom, b = 6.1737 Angstrom, c = 7.6530 Angstrom (CdYMnWO7). These compounds are insulators with high resistivities at room temperature. The temperature dependence of the magnetic susceptibility of CdYMWO7 (M = Cr and Mn) show Curie-Weiss Law's behaviors from 80 to 300 K. The magnetic moments at room temperature fit very well with those corresponding to Cr3+ and Mn3+ ions. This suggests that both Cr and Mn ions exist in + 3 oxidation state in CdYMWO7 compounds. (C) 1998 Elsevier Science Ltd. All rights reserved.