Blue upconversion Luminescence in Tm3+/Yb3+-Codoped New Oxyfluoride Tellurite Glass

The thermal stability, Raman spectrum and upconversion properties of Tm^(3+)/Yb^(3+) co-doped new oxyfluoride tellurite glass are investigated. The results show that Tm^(3+)/Yb^(3+) co-doped oxyfluoride tellurite glass possesses good thermal stability, lower phonon energy, and intense upconversion blue luminescence. Under 980-nm laser diode (LD) excitation, the intense blue (475 nm) emission and weak red (649 nm) emission corresponding to the 1G4 -> 3H6 and 1G4 -> 3F4 transitions of Tm^(3+) ions respectively, were simultaneously observed at room temperature. The possible upconversion mechanisms are evaluated. The intense blue upconversion luminescence of Tm^(3+)/Yb^(3+) co-doped oxyfluoride tellurite glass can be used as potential host material for the development of blue upconversion optical devices.

Planar waveguides formed in a new chemically stable Er3+/Yb3+ co-doped phosphate glass

A new Er(3+)/Yb(3+) co-doped phosphate glass has been prepared, which exhibits good chemical durability and spectralproperties. Planar graded index waveguides have been fabricated in the glass by (Ag+)-Na(+) ion exchange in a mixed melt of silver nitrate and potassium nitrate. Ion exchange is carried out by varying the process parameters such as temperature, diffusion time, and molten salt compositions. The diffusion parameters, diffusion coefficients, and activation energy are determined by the guidelines of fabricated waveguides, which are determined by the input prism coupling technique.

Bismuth-activated luminescent materials for broadband optical amplifier in WDM system

New broadband near infrared luminescence covering the whole work windows (1260-1625 nm) of the current wavelength division multiplexing (WDM) system was found from bismuth-activated M2O-Al2O3-SiO2 (M = Li, Na) and Li2O-Ta2O5-SiO2 glasses at room temperature in the case of 808 nm-laser excitation. But the near infrared luminescence mechanism of the bismuth-activated glasses is not well understood up to now. The figure-of-merits of bandwidth and gain of the glasses are better than those of Er3+-doped silicate glasses and Ti3+ doped sapphire, implying they are the promising gain-medium candidates for the broadband amplifiers and the widely tunable laser sources. (c) 2007 Elsevier B.V. All rights reserved.

Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn

Tin oxide doped beta-Ga2O3 single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. beta-Ga2O3 single crystals doped with different Sn4+ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn4+ concentrations and annealing. (c) 2006 Elsevier Ltd. All rights reserved.

Origin and evolution of new exons in the rodent zinc finger protein 39 gene

The origin of new structures and functions is an important process in evolution. In the past decades, we have obtained some preliminary knowledge of the origin and evolution of new genes. However, as the basic unit of genes, the origin and evolution of exons remain unclear. Because young exons retain the footprints of origination, they can be good materials for studying origin and evolution of new exons. In this paper, we report two young exons in a zinc finger protein gene of rodents. Since they are unique sequences in mouse and rat genome and no homologous sequences were found in the orthologous genes of human and pig, the young exons might originate after the divergence of primates and rodents through exonization of intronic sequences. Strong positive selection was detected in the new exons between mouse and rat, suggesting that these exons have undergone significant functional divergence after the separation of the two species. On the other hand, population genetics data of mouse demonstrate that the new exons have been subject to functional constraint, indicating an important function of the new exons in mouse. Functional analyses suggest that these new exons encode a nuclear localization signal peptide, which may mediate new ways of nuclear protein transport. To our knowledge, this is the first example of the origin and evolution of young exons.

De novo origination of a new protein-coding gene in Saccharomyces cerevisiae

Origination of new genes is an important mechanism generating genetic novelties during the evolution of an organism. Processes of creating new genes using preexisting genes as the raw materials are well characterized, such as exon shuffling, gene duplicat

Mn-AlInN: a new diluted magnetic semiconductor

Mn ions have been incorporated into MOCVD grown Al1-x In (x) N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions one has Curie points at similar to 260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T (c) above room temperature is assumed to be associated to the layer having higher Mn concentration.

Characteristics of band structures in 1D photonic crystals containing alternate left-right handed materials

This work investigated analytically the band structure of photonic crystals (PCs) with alternate layers of left and right-handed materials in one-dimension. It was found that, under certain conditions, new peculiar band structures not seen in all right-handed material PCs appeared. We transformed the analytic dispersion relation into two cosine terms, and obtained an interesting band structure using the new form of dispersion equation. Conditions for obtaining such peculiar band structure were given. (c) 2005 Elsevier Ltd. All rights reserved.

A new technique for boosting efficiency of silicon solar cells

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7mA/cm(2), but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystal line silicon wafers with only conventional background impurities. (c) 2004 Elsevier B.V. All rights reserved.

A novel application to quantum dot materials to the active region of superluminescent diodes

We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superluminescent diodes (QD-SLD), which is characterized by the introduction of a self-assembled asymmetric quantum dot pairs active region into conventional SLID structure. We investigated the structure and optical properties of a bilayer sample with different InAs deposition amounts in the first and second layer. We find that the structure of a self-assembled asymmetric quantum dot pairs can operate up to a 150 nm spectral width. In addition, as the first QDs' density can modulate the density of the QDs on the second layer, due to relatively high QDs density of the first layer, we can get the strong PL intensity from a broad range. We think that for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for QW-SLD. (C) 2002 Elsevier Science B.V. All rights reserved.

Progress of Si-based nanocrystalline luminescent materials

Si-based nanomaterials are some new photoeletronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e. g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x < 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.

Improved diphasic nc-si/a-si : H I-layer materials using PECVD

Two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic properties of the films have been investigated as a function of crystalline fraction. In comparison with typical a-Si:H, these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, higher mobility life-time product ( LT) and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9. 10 % and a stabilized efficiency of 8.56 % (AM 1.5, 100 mW/cm(2)).

Polarization multiplexing holographic optical recording of a new photochromic diarylethene

A new unsymmetrical photochromic diarylethene 1a is synthesized, and the photochromic properties of it are also investigated. The compound exhibits good photochromism with UV/ visible light irradiation. Compound 1a in polymethyl methacrylate ( PMMA ) film changes color upon 313- nm light irradiation from colorless to blue, in which the absorption maximum is observed at 587 nm. Photon- mode polarization multiplexing holographic optical recording is performed successfully using this compound as a recording medium. In the diarylethene 1b/ PMMA film, polarization multiplexing hologram recording and retrieval, and a combination with the angular multiplexing scheme, are demonstrated systematically. The results indicate that recording capacity can be significantly improved with the combined method of polarization and angular multiplexing holographic recording. (C) 2008 Society of Photo- Optical Instrumentation Engineers.

A NEW TYPE OF SILICON-ON-INSULATOR WITH A PERFECT SURFACE SILICON LAYER

A novel silicon structure consisting of a silicon-on-defect layer (SODL), with enhanced surface Hall mobility in the surface layer on a buried defect layer (DL), has been discovered [J. Li, Nucl. Instr. and Meth. B59/60 (1991) 1053]. SODL material was formed by using proton implantation and subsequent two-step annealing. The implantation was carried out with a Varian 350D ion implanter. Based on the discovery, a standard measurement method (current-voltage curve method) was adopted to measure the true resistivity value of the DL in order to replace the spreading resistivity measurement by which the true resistivity in seriously defective silicon cannot be obtained. By adopting the current-voltage current method, the true resistivity value of the DL is measured to be 4.2 x 10(9) OMEGA cm. The SODL material was proved to be a silicon-on-insulator substrate.