Influence of CO2, light and watering on growth of Nostoc flagelliforme mats

The terrestrial blue-green alga (cyanobacterium), Nostoc flagelliforme, was cultured in air at various levels of CO2, light and watering to see their effects on its growth. The alga showed the highest relative growth rate at the conditions of high CO2 (1500 ppm), high light regime (219-414 mu mol m(-2)s(-1)) and twice daily watering, but the lowest rate at the conditions of low light (58-114 mu mol m(-2)s(-1)) and daily twice watering. Increased watering had little effect on growth rate at 350 ppm CO2, but increased by about 70% at 1500ppm CO2 under high light conditions. It was concluded that enriched CO2 could enhance the growth of N. flagelliforme when sufficient light and water was supplied.

A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

National Natural Science Foundation of China 60536030 60776024 60877035 90820002 National High-Technology Research and Development Program of China 2007AA04Z329 2007AA04Z254

Silicon light emitting devices in CMOS technology

Two silicon light emitting devices with different structures are realized in standard 0.35 mu m complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6 nW and 12.1 nW are measured at 10 V and 100 mA, respectively, and both the calculated light emission intensities are more than 1 mW/Cm-2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm..

Photon localization and lasing in disordered GaNxAs1-x optical superlattices

We propose an approach to fabricate a disordered optical superlattice using microcracking faces in GaNxAs1-x epilayers. Laser action is observed and the emission exhibits random laser behaviors. A transfer-matrix simulation suggests photon localization occurs at the lasing modes.

Void formation and failure in InGaN/AlGaN double heterostructures

Condensed clusters of point defects within an InGaN/AlGaN double heterostructure grown by metal-organic vapor phase epitaxy on sapphire substrate have been observed using transmission electron microscopy. The existence of voids results in failure of the heterostructure in electroluminescence. The voids are 50-100 nm in diameter and are distributed inhomogeneously within In0.25Ga0.75N/AlGaN active layers. The density of the voids was measured as 10(15) cm(-3), which corresponds to a density of dangling bonds of 10(20) cm(-3). These dangling bonds may fully deplete free carriers in this double heterostructure and result in the heterostructure having high resistivity as confirmed by electrical measurement. (C) 2003 Elsevier Science B.V. All rights reserved.

Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN

In our recent report, [Xu , Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n(+) layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n(+) conductivity is not only from the contribution of nitride-site oxygen (O-N), but also from the gallium-site silicon (Si-Ga) donors, with activation energies 2 meV (for O-N) and 42 meV (for Si-Ga), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. Si-Ga and O-N should also be shallow donors and V-Ga-O or V-Ga-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration N-A=1.8x10(17) cm(-3), the second donor concentration N-D2=1.0x10(18) cm(-3), and the compensation ratio C=N-A/N-D1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. (C) 2001 American Institute of Physics.

A silicon light emitting devices in standard CMOS technology

A silicon light emitting device is designed and simulated. It is fabricated in 0.6 mum standard CMOS technology. The device can give more than 1 muW optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V The external electrical-optical conversion efficiency is more than 10(-6). The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

We have studied exciton localization and delocalization effect in GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL) and timeresolved PL measurements. Studied results suggest that, at low temperature and under a conventional CW excitation, measured PL spectra were dominated by localized exciton (LE) emission caused by potential fluctuations in GaNAs layer. However, under short pulse laser excitation, it is different. An extra high-energy PL peak comes out from GaNAs/GaAs QWs and dominates the PL spectra under high excitation and/or at high temperature. By investigation, we have attributed the new PL peak to the recombination of delocalized excitons in QWs. This recombination process competes with the localized exciton emission, which, we believe, constitutes the "S-shaped" temperature-dependent emission shift often reported in ternary nitrides of InGaN and AlGaN in the literature.

Charge stripping accumulation of light heavy ions in HIRFL-CSR main ring

The charge stripping injection method has been adopted for the accumulation of light heavy ions in HIRFL-CSR. This method has some special requirements for the accelerating particles, and at the same time the structure of the injection orbit has to be changed. In this paper, the design of the orbit has been presented, as well as the calculation of the beam line matching. According to the result of commissioning, stripping injection can accumulate the beam to a higher current.

Decomposition of emergent macrophyte roots and rhizomes in a northern prairie marsh

Dry mass, nitrogen and phosphorus content in belowground litter of four emergent macrophytes (Typha glauca Godr., Phragmites australis (Cav.) Trin., Scolochloa festucacea (Willd.) Link and Scirpus lacustris L.) were followed for 1.2 years in a series of experimental marshes, Delta Marsh, Manitoba. Litter bags containing roots and rhizome materials of each species were buried in unflooded soil, or soil flooded at three water depths (1–30, 31–60, > 60 cm). There were few differences in dry mass loss in unflooded or flooded soils, and depth of flooding also had little effect on decomposition rates. In the flooded sites, Scolochloa and Phragmites roots lost more mass (48.9–63.8% and 59.2–85.5%, respectively) after 112 days than Typha and Scirpus (36.3–43.6 and 37.0–47.2%, respectively). These differences continued through to the end of the study, except in the shallow sites where Scirpus roots lost more mass and had comparable mass remaining as Scolochloa and Phragmites. In the unflooded sites, there was little difference between species. All litters lost nitrogen (22.9–90.0%) and phosphorus (46.3–92.7%) during the first 112 days, then levels tended to remain constant. Decay rates for our belowground root and rhizome litters were comparable to published literature values for aboveground shoot litter of the same species, except for Phragmites roots and rhizomes which decomposed at a faster rate (−k = 0.0014−0.0032) than shoots (−k = 0.0003−0.0007, [van der Valk, A.G., Rhymer, J.M., Murkin, H.R., 1991. Flooding and the decomposition of litter of four emergent plant species in a prairie wetland. Wetlands 11, 1–16]).

Charge carrier injection and transport in PVK: Alq(3) blend films

We have investigated the current-voltage and electroluminescent (EL) characteristics of single-layer organic devices based on poly(9-vinylcarbazole) (PVK) and tris(8-hydroxyquinoline)aluminium (Alq(3)) blend with different PVK : Alq(3) concentrations. The experimental results from the observed thickness and temperature dependence clearly demonstrate that the current at low voltage is due to the holes injected at the anode and is space-charge limited, whereas the current at the high voltage that steeply increases is explained as the electron tunnelling injection at the cathode. The hole mobility is directly determined by space-charge-limited current at the low voltage region and decreases with increasing Alq(3) content in the blend. The EL efficiency shows concentration dependence, which is attributed to the change of the transport of electrons and holes in the blend film.

Charge carrier mobility and electroluminescence in a green-emitting alternating block copolymer with a methoxy Bi-substituted chromophore

We determine the mobility of positive and negative charge carriers in a soluble green-emitting alternating block copolymer with, a methoxy bi-subsbituted conjugated segment. The negative charge carrier mobility of 6 x 10(-11) cm(2)/V.s is directly determined using space-charge-limited current analytical expressions. Positive charge carrier transport is also space-charge-limited, with a mobility of I x 10(-8) cm(2)/V.s. The electron trap distribution is exponential, with a characteristic energy of similar to 0.12 eV. A hole trap with energy similar to 0.4 eV was observed. This copolymer is used as emissive material in organic light-emitting diodes that present brightness of similar to 900 cd/m(2) at 12.5 V.

SYNTHESIS AND PHOTOCHROMISM IN SOLUTION OF PHENOXYNAPHTHACENEQUINONE DERIVATIVES

Two new phenoxynaphthacenequinone derivatives, 6-[4-(2-(4-hydroxyphenyl)isopropyl)phenoxy] -5,12-naphthacenequinone (7) and 6-[4-(potassium sulfophenylazo)phenoxy]-5,12-naphthacenequinone (8), were synthesized, and their photochromism in solution was investigated and compared with that of 6-phenoxy-5,12-naphthacenequinone (1). On the basis of the spectral data and the selective irreversible reaction of ammonia with the colored phenoxy-ana-naphthacenequinone, the concentrations of the ana forms at the photostationary state (PSS), achieved by 365 nm UV irradiation, and the molar extinction coefficients of the pure ana forms at 481-482 nm of compounds 1, 7 and 8 in dimethylsulfoxide (DMSO) were found to be 83 mol.% and 1.70x10(4) mol(-1) dm(3) cm(-1), 82 mol.% and 1.62x10(4) mol(-1) dm(3) cm(-1) and 16 mol.% and approximately 1.34x10(4) mol(-1) dm(3) cm(-1) respectively; the absorption spectra of the colored ana forms of 7 and 1 in DMSO were estimated; the rate;constants of photoconversion induced by 365 nm light were obtained. The results show the strong effect of the structure of the phenoxynaphthacenequinones on their photochromism in solution. In addition to DMSO solution, compound 7 exhibited normal photochromism in toluene, benzene, chloroform and a DMSO-ethanol mixed solvent, but not in dimethylformamide (DMF) in which a photoinduced reaction occurred between 7 and DMF or impurities.

Structural analysis of peptides of PSII light-harvesting complexes in siphonous green algae, Codium fragile

peptide composition and arrangement of 4 major light-harvesting complexes LHCP1-3 and LHCP3, isolated from siphonous green algae (Codium fragile (Sur.) Hariot.) were investigated. LHCP1 showed five main peptides, 34.4, 31.5, 29.5, 28.2 and 26.5 kD in SDS-PAGE, the 34.4 and 31.5 kD peptides were never found in higher plants. LHCP3 contained the other four kinds of LHCP1 peptides except 34.4 kD, while LHCP3, consisted of only 28.2 and 26.5 kD peptides. We found that 34.4, 28.2 and 26.5 kD peptides were easy to decompose from LHCP1 when subjected to SDS-PACE without pretreatment. They might be located at the exterior of LHCP1, while the 31.5 and 29.5 kD peptides were at the central part. The 28.2 and 26.5 kD peptides often occurred in CPa, the center complex of PS II. They are possibly the LHC II peptides tightly associated with CC II. According to the results described above, a peptide map of LHCP1 was sketched.