Silicon light emitting devices in CMOS technology
Data(s) |
2007
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Resumo |
Two silicon light emitting devices with different structures are realized in standard 0.35 mu m complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6 nW and 12.1 nW are measured at 10 V and 100 mA, respectively, and both the calculated light emission intensities are more than 1 mW/Cm-2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Chen, HD (Chen Hong-Da); Liu, HJ (Liu Hai-Jun); Liu, JB (Liu Jin-Bin); Ming, G (Ming, Gu); Huang, BJ (Huang Bei-Ju) .Silicon light emitting devices in CMOS technology ,CHINESE PHYSICS LETTERS,JAN 2007 ,24 (1):265-267 |
Palavras-Chave | #光电子学 #ELECTROLUMINESCENCE |
Tipo |
期刊论文 |