Upconversion and fluorescence spectral studies of Er3+/Yb3+-codoped Bi(2)Q(3)-GeO2-Ga(2)Q(3)-Na2O glasses

The absorption spectra and upconversion fluorescence spectra of Er3+/-Yb3+-codoped natrium-gallium-germanium-bismuth glasses are measured and investigated. The intense green (533 and 549 nm) and red (672 nm) emission bands were simultaneously observed at room temperature. The quadratic dependence of the green and red emission on excitation power indicates that the two-photon absorption processes occur. The influence of Ga2C3 on upconversion intensity is investigated. The intensity of green emissions increases slowly with increasing Ga2O3 content, while the intensity of red emission increases significantly. The possible upconversion mechanisms for these glasses have also been discussed. The maximum phonon energy of the glasses determined based on the infrared (IR) spectral analysis is as low as 740 cm(-1). The studies indicate that Bi2O3-GeO2-Ga2O3-Na2O glasses may be potential materials for developing upconversion optical devices (c) 2006 Published by Elsevier B.V.

Highly stable, diode-pumped Nd : YLF regenerative amplifier

We present the design and experimental results for a diode pumped Nd:YLF regenerative amplifier applied to amplify a nanosecond laser pulse. Numerical simulation shows that the maximum output energy and the best stability can be obtained when the regenerative amplifier operates in a saturated mode for all pulse duration and temporal profiles. Using extra post-pulse is a good method to decrease the square-pulse distortion caused by gain saturation effect. The amplifier shows output energy of 4.2mJ with a total energy gain of more than 107 and output energy stability of better than 1% rms. When extra post-pulse is added, square-pulse distortion is decreased from 1.33 to 1.17 for the amplifier that is seeded with an optical pulse of 3 ns.

Ag~+-Li~+离子交换制作Er~(3+)/Yb~(3+)共掺磷酸盐玻璃平面光波导(英文)

制备了化学稳定的Er^3＋／Yb^3＋共掺的磷酸盐玻璃，并在其中制作了用于光放大器和激光器的平面光波导．这种磷酸盐玻璃的失重速率为4．7×10^-5g·cm^-2·hr^-1，小于Kigre公司商业化的磷酸盐玻璃QX／Er的失重速率．采用Ag^＋-Li^＋交换技术制作了平面光波导并用m-线光谱在632．8nm测量了平面光波导的有效折射率．根据反WKB法得到折射率形貌，计算了离子交换参数如：离子交换深度、表面折射率，折射率改变和扩散系数等．

Demonstration of microfiber knot laser

The authors demonstrate a 1.5 mu m wavelength microfiber laser formed by tightening a doped microfiber into a knot in air. The 2-mm-diameter knot, assembled using a 3.8-mu m-diameter microfiber that is directly drawn from Er:Yb-doped phosphate glass, serves as both active medium and resonating cavity for lasing. Single-longitudinal-mode laser with threshold of about 5 mW and output power higher than 8 mu W is obtained. Their initial results suggest a simple approach to highly compact lasers based on doped microscale optical fibers. (c) 2006 American Institute of Physics.

Enhanced broadband near-infrared luminescence in transparent silicate glass ceramics containing Yb3+ ions and Ni2+-doped Li Ga5 O8 nanocrystals

Spectral properties of Yb3+/Ni2+ codoped transparent silicate glass ceramics containing LiGa5O8 nanocrystals were investigated. The near-infrared emission intensity of Ni2+ was largely increased with Yb3+ codoping due to Yb3+-> Ni2+ energy transfer. The qualitative calculation of the energy transfer constant Cs-a and rate Ps-a showed that the Yb3+-> Ni2+ energy transfer was much greater than in the opposite direction. Yb3+/Ni2+ codoped glass ceramics with 0.75 mol % Yb2O3 exhibited a near-infrared emission with full width at half maximum of 290 nm and fluorescent lifetime of 920 mu s. The glass ceramics are promising for broadband optical amplification.

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.