Hit-or-miss representation of a pattern spectrum and its optical implementation

We demonstrate that a pattern spectrum can be decomposed into the union of hit-or-miss transforms with respect to a series of structure-element pairs. Moreover we use a Boolean-logic function to express the pattern spectrum and show that the Boolean-logic representation of a pattern spectrum is composed of hit-or-miss min terms. The optical implementation of a pattern spectrum is based on an incoherent optical correlator with a feedback operation. (C) 1996 Optical Society of America

FUZZY SOLID SETS FOR MATHEMATICAL MORPHOLOGY AND OPTICAL IMPLEMENTATION

Fuzzy sets in the subject space are transformed to fuzzy solid sets in an increased object space on the basis of the development of the local umbra concept. Further, a counting transform is defined for reconstructing the fuzzy sets from the fuzzy solid sets, and the dilation and erosion operators in mathematical morphology are redefined in the fuzzy solid-set space. The algebraic structures of fuzzy solid sets can lead not only to fuzzy logic but also to arithmetic operations. Thus a fuzzy solid-set image algebra of two image transforms and five set operators is defined that can formulate binary and gray-scale morphological image-processing functions consisting of dilation, erosion, intersection, union, complement, addition, subtraction, and reflection in a unified form. A cellular set-logic array architecture is suggested for executing this image algebra. The optical implementation of the architecture, based on area coding of gray-scale values, is demonstrated. (C) 1995 Optical Society of America

Numerical simulation of wavefronts diffracted by apertures with circular symmetry

The numerical simulation of the wavefronts diffracted by apertures with circular symmetry is realized by a numerical method. It is based on the angular spectrum of plane waves, which ignored the vector nature of light. The on-axial irradiance distributions of plane wavefront and Gauss wavefront diffracted by the circular aperture have been calculated along the propagation direction. Comparisons of the simulation results with the analytical results and the experimental results tell us that it is a feasible method to calculate the diffraction of apertures. (c) 2006 Published by Elsevier GmbH.

静动结合的化学腐蚀法制备近场光学探针的理论分析

理论上分析了静动结合的化学腐蚀法制备探针的具体机理及过程。在静态腐蚀的过程中, 利用流体力学Young-Laplace方程的一级近似解获得了光纤插入到HF酸中形成的新月形高度。在动态腐蚀过程中, 详细分析了当静态腐蚀时间和动态腐蚀时间分别取不同值时, 光纤移动速度对光纤探针结构的影响。利用此法可制备出尖端锐利、大锥角或多锥体等各种结构的光纤探针。这为实验上制备出性能优良的探针, 为拓宽扫描近场光学显微镜的应用范围奠定基础。将上述理论分析的结果与本文实验中所得初步结果进行了比较, 所得结果一致。

Structure and thermal stability of novel fluorophosphate glasses

A systematic investigation on glass formation in the PbF2-InF3-BaHPO4 ternary system has been carried out. These glasses have characterized by IR spectra, Raman spectra and differential thermal analysis. The results show that the structure of these glasses is mainly affected by BaHPO4 and InF3 contents. With decreasing BaHPO4 content, the glass structure gradually transforms from metaphosphate to polyphosphate. When InF3 content is low, it mainly acts as network modifier, when its content is high; it enters glass matrix and forms In(O,F)(6) groups connecting the polymerized phosphorus oxygen species. PbF2 mainly acts as network modifier in this system. Systematic variations of the glass transition temperature and the thermal stability index agree well with these results. The most stable glass with Delta T = 230 degrees C and S = 21.79 K is obtained. (c) 2004 Elsevier B.V. All rights reserved.

Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

High-temperature AlN interlayer for crack-free AlGaN growth on GaN

This paper presents a study of the transformation of high-temperature AlN (HT-AlN) interlayer (IL) and its effect on the strain relaxation of Al0.25Ga0.75N/HT-AlN/GaN. The HT-AlN IL capped with Al0.25Ga0.75N transforms into AlGaN IL in which the Al composition increases with the HT-AlN IL thickness while the total Ga content keeps nearly constant. During the HT-AlN IL growth on GaN, the tensile stress is relieved through the formation of V trenches. The filling up of the V trenches by the subsequent Al0.25Ga0.75N growth is identified as the Ga source for the IL transformation, whose effect is very different from a direct growth of HT-AlGaN IL. The a-type dislocations generated during the advancement of V trenches and their filling up propagate into the Al0.25Ga0.75N overlayer. The a-type dislocation density increases dramatically with the IL thickness, which greatly enhances the strain relaxation of Al0.25Ga0.75N. (c) 2008 American Institute of Physics.

Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

The time dependence of wet oxidized AlGaAs/GaAs in a distributed Bragg reflector (DBR) structure has been studied by mean of transmission electron microscopy and Raman spectroscopy. The wet oxidized AlGaAs transforms from an initial amorphous hydroxide phase to the polycrystalline gamma-Al2O3 phase with the extension of oxidation time. The thickness of oxide layers will contract due to the different volume per Al atom in AlGaAs and in the oxides. In the samples oxidized for 10 and 20 min, there are some fissures along the AlGaAs/GaAs interfaces. In the samples oxidized longer, although no such fissures are present along the interfaces, the whole oxidized DBR delaminates from the buffer. (c) 2005 American Vacuum Society.

Study on growth mechanism of low-temperature prepared microcrystalline Si thin films

Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.

Calculation of energy levels in InGaAs/GaAs quantum dot array

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.

Strain evolution in GaN layers grown on high-temperature AlN interlayers

The strain evolution of the GaN layer grown on a high-temperature AlN interlayer with GaN template by metal organic chemical vapor deposition is investigated. It is found that the layer is initially under compressive strain and then gradually relaxes and transforms to under tensile strain with increasing film thickness. The result of the in situ stress analysis is confirmed by x-ray diffraction measurements. Transmission electron microscopy analysis shows that the inclination of edge and mixed threading dislocations rather than the reduction of dislocation density mainly accounts for such a strain evolution. (c) 2006 American Institute of Physics.

PH值、氯离子浓度和监酸浓度对于铁的腐蚀电化学行为的影响

本文研究了Armco铁在盐酸溶液中的腐蚀电化学行为，探讨了ψ~-离子和PH值对铁的阳极溶解过程的影响，并进而讨论了ψ~-离子浓度和PH值对铁的腐蚀电化学行为的影响之间是否存在交互效应。在本工作中，作者提出了两个新的研究方法：(a) 从单支弱极化曲线测定腐蚀电流和阴、阳极反应的Tafep斜率；(b)根据交流方波电流扰动的响应函数方程测定极化电阻Rp和界面电容C。设I_c、I_(2c)、I_(3c)及I_(4c)分别为对应于弱极化区内极化电位为ΔE、2ΔE、3ΔE和4ΔE的极化电流，且令a = I_(2c)/I_c, b = I_(3c)/I_c, c = I_(4c)/I_(2c), 而(4b-3a~2)~(1/2)、(3c-2b)~(1/2)、(2c-a~2)~(1/2)则以S_j表示之，则可得到：I_(corr) = I_c/S_j b_c = ΔE/lg((a+s_j)/2) b_a = -ΔE/lg((a-s_j)/2)为了方便，准确地求出动力学参数，可选用一系列的ΔE值，得出相应的极化电流I_λ，求出S_λ，应用统计方法处理数据，可得：I_(corr) = ∑ from i=1 to n I_λ/∑ from i=1 ton S_λ b_c = ∑ form λ to n ΔE_λ/∑ form i=1 to n lg ((a_λ+S_λ)/2) b_a = ∑ form i=1 ton ΔE_λ/∑ form i=1 to n lg ((a_λ-S_λ)/2)在线性极化区间内向腐蚀金属电极体系施加一交流方波电流扰动讯号时，通过Laplace变换分析，得到相应的响应函数方程为：E_1(t) = λ_o(R_s+R_p) - 2λ_oR_p (e~(-(τ-λ)/RpC))/(1+e~(λ/RpC)) (o<τ<λ) E_2(t) = -λ_o(R_s+R_p) + 2λ_oR_p (e~(-(τ-λ)/RpC))/(1+e~(λ/RpC)) (λ<τ<2λ)由此方程可知，它们在E～λ坐标系统中的轨迹为对称兴致勃勃原点的两条直线。由此方程可进一步得到:ΔE = 2λ_oR_p (e~(λ/RpC)-1)/(e~(λ/RpC)+1) = 2λ_oR_p t_(anh)(λ/(2RpC)) Δh = 2λ_o Rs式中ΔE为单支响应直线的长度，Δh则为两条直线最高点之间的距离。上述公式可进一步简化为：Rp =(ΔE)/(2λ_o) λ>>RpC (λ_o)/(ΔE) = C/λ + 1/(2Rp) λ<

Ground state energy of He isoelectronic sequence treated variationally via Hylleraas-like wavefunction

In this study, the energy for the ground state of helium and a few helium-like ions (Z=1-6) is computed variationally by using a Hylleraas-like wavefunction. A four-parameters wavefunction, satisfying boundary conditions for coalescence points, is combined with a Hylleraas-like basis set which explicitly incorporates r12 interelectronic distance. The main contribution of this work is the introduction of modified correlation terms leading to the definition of integral transforms which provide the calculation of expectation value of energy to be done analytically over single-particle coordinates instead of Hylleraas coordinates.

脊形结构LiNbO3光波导调制器的扩展点匹配法分析

将点匹配法扩展应用于脊形结构LiNbO3光波导调制器电极的准静态分析中.将调制器各区域的势函数表示为该区域中满足Laplace方程的一系列基函数的级数,匹配边界上有限个点的边界条件以确定出级数项的系数.通过势函数得到脊形结构LiNbO3光波导调制器结构中电场分布的解析表达式,利用求得的电场可以得到调制器特性阻抗及有效折射率.所得的特性阻抗和有效折射率与采用有限元法得到的结果十分吻合.这一分析方法简便快捷,精度高,能够处理电极有一定厚度的多层光波导调制器结构.