Multistage etching process for microscopically smooth tellurite glass surfaces in optical fibers

Bulk samples of tellurite glass with composition 75TeO(2)-20ZnO-5Na(2)O (TZN) were fabricated by melting and quenching techniques. In order to improve the surface quality of optical fiber preform made with this tellurite glass, the authors developed a multistage etching process. The relationship between successive etching treatments and roughness of the TZN glass surface was probed by using an atomic force microscope. The results demonstrate that this multistage etching method effectively improves this tellurite glass surface smoothness to a level comparable with that of a reference silica glass slide, and the corresponding chemical micromechanisms and fundamentals are discussed and confirmed by atomic force microscopy, potentially contributing to the development of multicomponent soft glass fibers and devices. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3437017]

灯盏花乙素和槐花化合物K3 体外抗HIV-1 活性研究

由于目前抗HIV 药物价格昂贵且有较强的毒副作用，传统药物将成为未来 HIV 治疗的主流药物。许多植物来源的天然化合物体外具有较好的抗HIV 活性， 有些化合物甚至可以作用在病毒复制周期的不同阶段。HIV 侵入抑制剂目前成 为抗HIV 药物研发的热点。HIV 侵入抑制剂靶定在病毒复制周期的结合或融合 位点，对临床中已产生耐药性突变的病毒株也有较好的抑制作用。该类抑制剂 的出现将为HARRT 疗法提供更多新的药物组合。开发新一代的HIV-1 侵入抑制 剂，与逆转录酶或蛋白酶抑制剂联合使用将增加治疗的有效性并减少毒副作用 的产生。 灯盏花乙素（Scutellarin）与槐花化合物K3 均从天然植物资源中提取，且 前者在我国临床上一直有着广泛应用。我们对这两种化合物的抗HIV-1 活性进 行了研究，检测了其对实验室适应病毒株（HIV-1ⅢB）、耐药株（HIV-174V）和临 床分离病毒株（HIV-1KM018）的抑制活性。灯盏花乙素是从植物滇黄芩中分离出 来的具有多种生物活性的黄酮类化合物，该化合物抑制HIV-1ⅢB 诱导C8166 细 胞合胞体形成的EC50 为26μM，选择指数为36。灯盏花乙素对耐药病毒株和临 床分离株也表现出良好的抑制作用。从槐花中提取的硫酸酯类化合物K3 体外研 究证实也有很好的抗HIV-1 活性，它不仅可以抑制HIV-1 致细胞病变效应，也 可以抑制感染细胞中的HIV-1 特异性抗原表达，该化合物的半数有效抑制浓度 EC50 为5～54μM。 灯盏花乙素与槐花化合物K3 的抗HIV-1 机制研究结果表明：两种化合物均 能有效抑制病毒进入细胞。灯盏花乙素在54μM 时抑制45%的病毒粒子进入细 胞，槐花化合物K3 在40μM 时能够有效抑制56％的HIV-1 进入细胞；灯盏花乙 素与槐花化合物K3 也可以抑制C8166 细胞与慢性感染的H9/HIV-1ⅢB 细胞间的融合，灯盏花乙素的EC50 为15μM，而槐花化合物K3 的EC50 为5μM；两种化 合物对体外重组的HIV-1 逆转录酶有微弱的抑制作用，在433μM 时，灯盏花乙 素可以抑制48％的逆转录酶活性，槐花化合物K3 在300μM 时能够抑制80％的 HIV-1 逆转录酶活性；这两种化合物体外对HIV-1 均无直接杀伤作用，也不能抑 制慢性感染细胞中的病毒复制和HIV-1 蛋白酶活性。因此，灯盏花乙素与槐花 化合物K3 的体外抗HIV-1 作用机制主要源于其能够抑制HIV-1 RT 活性和阻止 HIV-1 进入细胞。 灯盏花乙素和槐花化合物K3的有效抗病毒活性和多种作用途径使其成为具 有发展潜力的抗病毒先导化合物。

THE ADSORPTION OF O2 ON FESI SURFACES

The initial adsorption stages and the interaction of oxygen on FeSi surfaces have been studied as a function of exposure and annealing temperature using a variety of techniques including HREELS, AES, LEED, XPS and UPS. O2 was found to adsorb dissociatively on the FeSi surfaces at room temperature. The whole adsorption process can be divided into four stages. Heating promotes the oxidation of Si, and a thin SiO2 overlayer is formed on the surface when annealed at 450-degrees-C, while all FeOx species are reduced. Models for adsorbed atomic O on the FeSi(100) surface exposed to different oxygen exposures have been put forward to account for the observed experimental results.

Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces

The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.