Effects of the wave function localization in AlInGaN quaternary alloys

Using the first-principles band-structure method and the special quasirandom structures approach, the authors have investigated the band structure of random AlxInyGa1-x-yN quaternary alloys. They show that the wave functions of the band edge states are more localized on the InN sites. Consequently, the photoluminescence transition intensity in the alloy is higher than that in GaN. The valence band maximum state of the quaternary alloy is also higher than GaN with the same band gap, indicating that the alloy can be doped more easily as p-type. (c) 2007 American Institute of Physics.

Chiral symmetry analysis and rigid rotational invariance for the lattice dynamics of single-wall carbon nanotubes

We provide a detailed expression of the vibrational potential for the lattice dynamics of single-wall carbon nanotubes (SWCNT's) satisfying the requirements of the exact rigid translational as well as rotational symmetries, which is a nontrivial generalization of the valence force model for the planar graphene sheet. With the model, the low-frequency behavior of the dispersion of the acoustic modes as well as the flexure mode can be precisely calculated. Based upon a comprehensive chiral symmetry analysis, the calculated mode frequencies (including all the Raman- and infrared-active modes), velocities of acoustic modes, and the polarization vectors are systematically fitted in terms of the chiral angle and radius, where the restrictions of various symmetry operations of SWCNT's are fulfilled.

Study on Raman spectra of GaMnAs

Raman spectra of diluted magnetic semiconductor GaMnAs alloy were reported. The coupled plamon-LO-phonon ( CPLP) mode has LO-like polarization properties. With increasing Mn concentration, the CPLP mode shifts to low frequency. The hole density in the alloy was determined from the ratio of the intensity of the CPLP mode to that of the unscreened LO mode in the depletion layer. The hole density increases with the increase of the Mn composition. The Raman spectra of GaMnAs alloy were measured at different temperature. It is confirmed that the hole density in the alloy increases with the increase of the temperature.

Fast Discrimination of Commerical Corn Varieties Based on Near Infrared Spectra

The existing methods for the discrimination of varieties of commodity corn seed are unable to process batch data and speed up identification, and very time consuming and costly. The present paper developed a new approach to the fast discrimination of varieties of commodity corn by means of near infrared spectral data. Firstly, the experiment obtained spectral data of 37 varieties of commodity corn seed with the Fourier transform near infrared spectrometer in the wavenurnber range from 4 000 to 12 000 cm (1). Secondly, the original data were pretreated using statistics method of normalization in order to eliminate noise and improve the efficiency of models. Thirdly, a new way based on sample standard deviation was used to select the characteristic spectral regions, and it can search very different wavenumbers among all wavenumbers and reduce the amount of data in part. Fourthly, principal component analysis (PCA) was used to compress spectral data into several variables, and the cumulate reliabilities of the first ten components were more than 99.98%. Finally, according to the first ten components, recognition models were established based on BPR. For every 25 samples in each variety, 15 samples were randomly selected as the training set. The remaining 10 samples of the same variety were used as the first testing set, and all the 900 samples of the other varieties were used as the second testing set. Calculation results showed that the average correctness recognition rate of the 37 varieties of corn seed was 94.3%. Testing results indicate that the discrimination method had higher precision than the discrimination of various kinds of commodity corn seed. In short, it is feasible to discriminate various varieties of commodity corn seed based on near infrared spectroscopy and BPR.

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.

Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation

The second-harmonic generation (SHG) from Si1-xGex alloy films has been investigated by near-infrared femtosecond laser. Recognized by s-out polarized SHG intensity versus rotational angle of sample, the crystal symmetry of the fully strained Si0.83Ge0.17 alloy is found changed from the O-h to the C-2 point group due to the inhomogeneity of the strain. Calibrated by double crystal X-ray diffraction, the strain-induced chi((2)) is estimated at 5.7 x 10(-7) esu. According to the analysis on p-in/s-out SHG, the strain-relaxed Si0.10Ge0.90 alloy film is confirmed to be not fully relaxed, and the remaining strain is quantitatively determined to be around 0.1%.

A DUAL ION-BEAM EPITAXY SYSTEM

The design and characteristics of a dual ion beam epitaxy system (DIBE) are discussed. This system is composed of two beam lines, each providing a mass-separated ion beam converging finally with the other into the target chamber. The ions are decelerated and deposited on a substrate which can be heated to a temperature of 800-degrees-C. Currents of a few hundred microamperes are available for both beams and the deposit energies are in the range from tens to 1000 eV. The pressure of the target chamber during processing is about 7 x 10(-6) Pa. Preliminary experiments have proved that compound semiconductor materials such as GaN can be synthesized using the DIBE system.

CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM

A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and for the growth of metastable compounds has been constructed and tested. The system consists of two mass-resolved low-energy ion beams which merge at the target with an incident energy range 50-25 000 eV. Each ion beam uses a Freeman ion source for ion production and a magnetic sector for mass filtering. While a magnetic quadrupole lens is used in one beam for ion optics, an electrostatic quadrupole lens focuses the other beam. Both focusing approaches provide a current density more than 100-mu-A/cm2, although the magnetic quadrupole gives a better performance for ion energies below 200 eV. The typical current of each beam reaches more than 0.3 mA at 100 eV, with a ribbon beam of about 0.3-0.5 x 2 cm2. The target is housed in an ultrahigh vacuum chamber with a base pressure of 1 x 10(-7) Pa and a typical pressure of 5 x 10(-6) Pa when a noncondensable beam like argon is brought into the chamber. During deposition, the target can be heated to 800-degrees-C and scanned mechanically with an electronic scanning control unit. The dual beam system has been used to grow GaN using a Ga+ and a N+ beam, and to study the oxygen and hydrogen ion beam bombardment effects during carbon ion beam deposition. The results showed that the simultaneous arrival of two beams at the target is particularly useful in compound formation and in elucidation of growth mechanisms.

SU(2)Chern-Simons涡旋解的拓扑结构

运用规范势分解理论研究了Dunne-Jackiw-Pi-Trugenberger模型中的自对偶方程,得到一个静态的自对偶Chern-Simons多涡旋解,每个涡旋由5个参数描述。发现了自对偶解与拓扑数之间的关系,而拓扑数由Brouwer度与Hopf指标确定。同时,也研究了该涡旋解的磁通量的拓扑量子化。

SU(2)规范场分解与Bose-Einstein凝聚体中的环流条件

利用SU(2)规范场的单位矢量场分解形式讨论了Bose-Einstein凝聚体中的环流条件.对于二分量Bose-Einstein凝聚,内部态的SU(2)对称性将导致一个拓扑环流条件,这是一个推广的Mer-min—Ho关系.

Entanglement conditions for mixed SU(2) and SU(1,1) systems

We derive a class of inequalities for detecting entanglement in the mixed SU(2) and SU(1, 1) systems based on the Schrodinger-Robertson indeterminacy relations in conjugation with the partial transposition. These inequalities are in general stronger than those based on the usual Heisenberg uncertainty relations for detecting entanglement. Furthermore, based on the complete reduction from SU(2) and SU(1,1) systems to bosonic systems, we derive some entanglement conditions for two-mode systems. We also use the partial reduction to obtain some inequalities in the mixed SU(2) (or SU(1, 1)) and bosonic systems.

Entrance channel dependence of the correlation function of IMFs in Ar-36+Sn-112,Sn-124 at 35MeV/u

The reduced velocity correlation functions of the Intermediate Mass Fragments (IMFs) were measured in the reactions of Ar-36+ Sn-112,Sn-124 at 35MeV/u. The anti-correlation at small reduced velocities is more pronounced in Ar-36+ Sn-124 system than that in Ar-36+ Sn-112 system. The difference of the correlation functions between the two reactions is mainly contributed by the particle pairs with high momenta. A three-body Coulomb repulsive trajectory code (MENEKA) is employed to calculate the emission time scale of IMFs for-the both systems. The time scale is 150fm/c in the Ar-36+ Sn-112 system and 120fm/c in the Ar-36+ Sn-124 system, respectively. A calculation based on an Isospin dependence Quantum Molecular Dynamics code (IQMD) reveals that the emission time spectrum of IMFs is shifted slightly leftwards in Ar-36+ Sn-124 compared with that in the Ar-16+ Sn-112 system, indicating a shorter emission time scale. Correspondingly, the central density of the hot nuclei decreases faster in Ar-36+ Sn-124 than in Ar-36+ Sn-112

General SU(2)(L) x SU(2)(R) x U(1)(EM) sigma model with external sources, dynamical breaking and spontaneous vacuum symmetry breaking

We give a general SU(2)(L) x SU(2)(R) x U(1)(EM) sigma model with external sources, dynamical breaking and spontaneous vacuum symmetry breaking, and present the general formulation of the model. It is found that sigma and pi(0) without electric charges have electromagnetic interaction effects coming front the internal structures. A general Lorentz transformation relative to external sources J(gauge) - (J(A mu) J(A mu)(kappa)) derived, using the general Lorentz transformation and the four-dimensional current of nuclear matter of the ground si ate with J(gauge) = 0, we give the four-dimensional general relations between the different currents of nuclear matter systems with J(gauge) not equal 0 and those with J(gauge) = 0. The relation of the density's coupling with external magnetic field is derived, which conforms well to dense nuclear matter in a strong magnetic field. We show different condensed effects in strong interaction about fermions and antifermions, and give the concrete scalar and pseudoscalar condensed expressions of sigma(0) and pi(0) bosons. About different dynamical breaking and spontaneous vacuum symmetry breaking, the concrete expressions of different mass spectra are obtained in field theory. This paper acquires the running spontaneous vacuum breaking value sigma'(0), and obtains the spontaneous vacuum breaking in tenus of the running sigma'(0), which make nucleon, sigma, and pi particles gain effective masses. We achieve both the effect of external sources and nonvanishing value of the condensed scalar and pseudoscalar paticles. It is deduced that the masses of nucleons, sigma and pi generally depend on different external sources.

Topological structure of the solitons solution in SU(3) Dunne-Jackiw-Pi-Trugenberger model

By using phi-mapping topological current theory and gauge potential decomposition, we discuss the self-dual equation and its solution in the SU(N) Dunne-Jackiw-Pi-Trugenberger model and obtain a new concrete self-dual equation with a 6 function. For the SU(3) case, we obtain a new self-duality solution and find the relationship between the soliton solution and topological number which is determined by the Hopf index and Brouwer degree of phi-mapping. In our solution, the flux of this soliton is naturally quantized.