一种新的L-型通道区布线算法

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Research progresses of SOI optical waveguide devices and integrated optical switch matrix

SOI (silicon-on-insulator) is a new material with a lot of important performances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2X2 thermal-optical switch were successfully designed and fabricated. Based on these, 4X4 and 8X8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.

In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator

Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees C and annealed at 1000 degrees C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and bigh-f micro-mechanical disk resonators.

A novel DC-DC charge pump circuit for passive RFID transponder

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.

Investigation on acceleration response of fiber optic mandrel hydrophone

The acceleration response of fiber optic mandrel hydrophone is studied based on the theory of elastic dynamics in this paper. For the first time the influence of the optical fiber on the acceleration response is taken into consideration. And the derivation of the radial deformation of the mandrel is presented in details. The acceleration response is evaluated both theoretically and experimentally and the results are in good agreement.

黄土高原降水计算插值与插值计算结果的对比分析

　收集黄土高原及周边地区74 个气象站1952 —2001 年降水数据, 用ArcGIS913 普通克里金(ordinary kriging) 插 值法采用计算插值(calculate then interpolate , CI) 和插值计算(interpolate then calculate , IC) 的方法生成黄土高原地区 1952 —2001 年50 a 平均年降水量和年降水量线性趋势系数空间分布表面, 并对其进行统计分析和地形分析。结果 表明: 1) 从插值结果统计值看, CI、IC 法生成的黄土高原地区50 a 平均年降水量和线性趋势系数空间分布表面平 均值分别为421165、421156 mm和- 01541 0、- 01423 1 mm/ a , 相似系数分别为99178 %和95199 % , 二者一致性良好; 2) 从插值结果表面光滑度看, IC 法稍优于CI 法,借用地形分析对生成表面进行坡度、坡向运算, 可作为评价表面 光滑度、空间数量变化特征和空间方向变化特征的直观方法; 3) 黄土高原地区50 a 平均年降水量具有东南多西北 少、南多北少、东多西少的分布规律, 其中服从东南西北、南北和东西方向递减的地带性分布规律区域占黄土高原 地区面积的89134 % , 非地带性分布规律区域占10166 %; 4) CI 和IC 法计算的黄土高原地区1952 —2001 年降水线 性趋势系数平均- 01541 0 和- 01423 1 mm/ a ,黄土高原地区年降水量有明显减少趋势。

溶液浇铸嵌段共聚物薄膜的自组织相行为

本论文以聚苯乙烯–聚甲基丙烯酸甲酯（PS–b–PMMA）两嵌段共聚物为研究对象，系统地考察了嵌段共聚物/择优亲和性良溶剂的溶液浇注膜由溶液膜向固体膜转化过程中嵌段共聚物的自组织相行为。 采用冷冻干燥的方法，研究了不同组成的PS–b–PMMA两嵌段共聚物分别用对不同嵌段组分有择优亲和性的良溶剂浇注时的薄膜在可控挥发的过程中，随着聚合物浓度的增加，不同聚合物分子链在溶液中自组织形成有序结构的过程。结果表明当溶剂表现出对平衡态呈柱状相的嵌段共聚物中含量少的嵌段组分有择优亲和性时，在聚合物浓度较低的溶液中耗尽吸引的熵力作用能促使被溶剂疏远的含量多的组分择优聚集，形成以含量多的组分为核而含量少的组分为壳的类胶束球状相，随着聚合物浓度增大，这些球密堆积形成反转相。聚集过程之所以能够发生，是因为聚集引起的平移熵的增加补偿了由聚集导致的混合熵的减少。由于PS–b–PMMA的两嵌段组分有相近的玻璃化转变温度和本体模量，因此认为本论文中得到的反转相与嵌段组分的模量无关。随着浓度的增大，由于溶剂在两相区中离去的速度不同，使得反转球状相（IS）经历反转柱状相（IC）、反转的刺穿片层结构（IHPL）和片层结构（LAM）后又演变成正常柱状相（NC）结构。 通过控制不同的溶剂挥发速度，研究了溶剂挥发动力学对溶液浇注嵌段共聚物薄膜相行为的影响，发现当溶剂的挥发速度介于0.02和0.004 mL/h时，借助于溶剂快速挥发保留住的低聚合物浓度的溶液结构和造成的强表面剪切应变场，在膜上形成了一种新颖的环状结构。这种环状结构与两亲性嵌段共聚物在溶液中形成的环状结构有明显不同。 研究了溶液浇注超薄膜的相形态，发现薄膜边界条件强烈影响薄膜相结构的形成，但其所波及的范围只有从薄膜表面向膜内部延伸约一个结构周期的厚度。

垂直结构金属基极有机晶体管及其在有机发光驱动中的应用

近几十年来，有机半导体材料作为新一代的信息功能材料正以其光电性能优异、生产成本低廉、加工工艺简单、选材范围宽广、机械性能柔软等显著的优点，吸引了世界范围内的目光，成为越来越多研究机构竞相研究和开发的对象，被广泛应用于发光二极管、薄膜晶体管、太阳能电池、存储器等光电子器件中。这些有机半导体器件的应用前景十分广阔，其巨大的商业价值极大地推动了有机半导体器件的发展。 本论文主要制备了N型金属基极有机晶体管，并对其性能进行了研究和分析，并在此基础上，研究了其在有机发光驱动中的应用。 (1) 用N型有机半导体材料Alq3、F16CuPc和BAlq3作发射极层，Au作为基极，N型硅作为收集极层，Al作为发射极接触电极成功地制备出了一系列N型无机/有机杂化金属基极晶体管，这些器件都表现出了良好的共基极增益特性，最大共基极增益达到了0.991，接近理想值1。在此基础上，通过在发射极层和发射极电极之间引入V2O5界面修饰层，还实现了具有良好共发射极特性的N型无机/有机杂化金属基极晶体管。研究发现，V2O5界面修饰层的引入明显地减小了共基极漏电流，使器件的共基极特性得到了进一步的改善，同时也使器件表现了共发射极特性，实现了电流的放大，我们已经把共基极特性的改善和共发射极特性的实现归功于界面修饰层的引入提高了电子注入的结果。 (2) 根据金属与半导体的接触理论,设计制备出了带有Au/Al双层金属基极的N型无机/有机杂化金属基极晶体管。由于Al和Alq3之间好的接触特性和有效的从Al到Alq3的空穴阻挡特性以及Au和Si之间良好的肖特基接触特性，大大降低了器件的漏电流，使器件在低的电压下表现了优异的共基极和共发射极特性，共基极增益达到了近似理想值1，最大共发射机增益达到了4000，克服了单层金属基极晶体管难实现共发射极特性的问题，为实现高性能金属基极晶体管提供了新的思路。 (3) 利用异质结的概念，设计制备出了带有BAlq3/Alq3异质结结构的N型无机/有机杂化金属基极晶体管，该器件同样表现了优异的共基极和共发射极特性。研究发现，同Alq3单发射极层结构的金属基极晶体管相比，BAlq3/Alq3异质结发射极层的使用进一步降低了器件的漏电流，使器件在相同的电压下表现了更高的输出电流和更高的共发射极增益，为进一步实现高性能金属基极晶体管提供了新的方法。 (4) 用有机半导体材料取代无机高掺杂硅作为收集极层，制备出了带有Al单层金属基极和Au/Al双层金属基极的N型垂直结构全有机金属基极晶体管，该器件表现出了良好的共基极特性和共发射极特性。研究表明，全有机金属基极晶体管表现了和无机/有机混合型金属基极晶体管相似的特性，其从本质上说也是一种渗透型金属基极晶体管。 (5) 实现了金属基极有机晶体管驱动有机发光二极管的集成器件。利用金属基极有机晶体管的共发射极电流放大特性，在基极输入电流IB量级比较低（uA）的情况下，得到了较大量级（mA）的输出电流IC，从而实现了对白光有机发光二极管的驱动，在基极输入电流IB为1×10-5A时有机发光二极管的亮度达到了1279 cd/m2。

RESEARCH ON ELECTRICAL-PROPERTIES OF AMPHIPHILIC LIPID-MEMBRANES BY MEANS OF INTERDIGITAL ELECTRODES

Lipids are the main component of all cell membranes and also important mimetic materials. Moreover, it was found recently that they can be used as sensitive membranes for olfactory and taste sensors. Hence the understanding of lipid resistance is important both in sensors and in life sciences. Thirteen lipids were examined by means of interdigital electrodes with narrow gaps of 20-50 mu m, made by IC technology. The membrane lateral resistance in air, resisting electrical voltage, the influence of impurities on resistance and the resistance change in acetic acid vapour are presented for the first time. It is shown that the electrical resistivity for self-assembling lipids depends on their duration of being in an electric field and the content of the conductive impurities. The interdigital electrode is a transducer as well as a powerful tool for researching biomaterials and mimicking materials. The conducting mechanism of lipids is discussed. This method is also suitable for some polymer membranes.

面向硅基光互连应用的无源光子集成器件研究进展

光互连是突破传统微电子IC性能瓶颈的重要技术手段,对推进"后摩尔时代"微电子技术的发展和高性能计算技术的实现具有关键性意义.本文在归纳总结不同层次光互连结构特点的基础上,对片上光互连(on-chip or intra-chip optical interconnects)所涉及的若干种无源光子集成器件的设计制备及性能特点进行了分析介绍,这些器件包括SOI亚波长光子线波导、SOI光子晶体波导、MMI分束/合束器、微环/微盘谐振腔滤波器、光子晶体微腔耦合滤波器、光子晶体反射镜等,是硅基片上光互连的基本构成单元.本文对这些关键性光子集成器件的国内最新研究进展进行了报道.

A Novel Power Supply Solution of a Passive RFID Transponder

This paper presents a power supply solution for fully integrated passive radio-frequency identification(RFID) transponder IC,which has been implemented in 0.35μm CMOS technology with embedded EEPROM from Chartered Semiconductor.The proposed AC/DC and DC/DC charge pumps can generate stable output for RFID applications with quite low power dissipation and extremely high pumping efficiency.An analytical model of the voltage multiplier,comparison with other charge pumps,simulation results,and chip testing results are presented.

Total Dose Radiation-Hard 0. SOI CMOS Transistors and ASIC

This paper presents the total dose radiation performance of 0. S^m SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad(Si) .The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at lMrad(Si) and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to lMrad(Si). The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad(Si).

影响集成电感性能的关键因素

片上集成电感是单片集成射频电路、微波电路及光电集成电路中不可缺少的重要元件。高Q值的片上集成电感是IC工作者追求的目标。衬底损耗和金属损耗一直被认为是限制集成电感品质的主要因素,文中实例为证，在尽量消除衬底损耗和减小金属损耗条件下。得出它们并不是片上集成电感的决定性限制因素。本文从电感的定义出发，得出电感螺旋线之间磁通量的相互抵消是集成电感不能获得高Q值的决定因素。并通过螺旋电感的模拟计算和结合已有的实验，对此论点进行了论证。

Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.

High Speed VCSEL-Based Parallel Optical Transmission Modules

Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel＇s data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emitting 850nm vertical cavity surface emitting laser（VCSEL） array is adopted as the light source,and the VCSEL chip is directly wire bonded to a 12 channel driver IC. The outputs of the VCSEL array are directly butt coupled into a 12 channel fiber array. Small form factor pluggable （SFP） packaging technology is used in the module to support hot pluggable in application. The performance results of the module are demonstrated. At an operating current of 8mA, an eye diagram at 3Gbit/s is achieved with an optical output of more than 1mW.