RADIATION VULCANIZATION OF HYDROGENATED ACRYLONITRILE-BUTADIENE RUBBER (HNBR)

Raw polymer and compound of hydrogenated acrylonitrile butadiene rubber (HNBR) were subjected to gamma-ray irradiation. Crosslinking was found to be the main chemical reaction induced by irradiation; the ratio of chain scission to crosslinking as well as

氢对锆基块体非晶合金形变和开裂的影响

通过充氢和未充氢缺口拉伸试样和三点弯曲试样在SEM下的原位加载,研究了氢对Zr65Al7.5Ni10Cu17．5块体非晶合金形变和开裂过程的影响．结果表明,无论是否有氢,块体非晶的剪切带发展到临界尺寸,剪切裂纹就沿剪切带形核、扩展,它一旦张开就导致快速的断裂．断口边缘观察到的无特征区是剪切带,而不是剪切裂纹断口;剪切断口形貌和拉伸断口形貌没有本质区别．只有当长时间充氢才能形成氢鼓泡,如鼓泡很小或尚未形成,则氢对剪切带以及裂纹的形核、扩展没有明显影响;如存在较大的氢鼓泡,则当剪切带尚未充分发展时微裂纹就形核,导致低应力脆断．

海洋小球藻Chlorella sp.甘油脂及脂肪酸、光合色素特征的研究

海洋微藻是海洋生态系统中最主要的初级生产者，也是海洋生物资源的重要来源。许多海洋微藻富含对人体具有重要的生理作用与保健功能的长链多不饱和脂肪酸，因此，筛选富含EPA、DHA等长链多不饱和脂肪酸的微藻和利用人工培养方法提高这些脂肪酸的产量是当前海洋生物学研究领域的热点之一。在本研究中，我们对被中科院海洋所定名为“Chlorella sp”（编号为1061）的一种海洋微藻的化学分类、甘油脂及其脂肪酸组成和外源葡萄糖和抗氧化剂（硫代硫酸钠）对这种微藻的脂肪酸含量的影响进行了研究，取得了以下主要结果。 海洋微藻是我固海水养殖中广泛使用的优良饵料藻。脂类物质是微藻最重要的营养指标之一，在本研究中，我们首先分析了被中科院海洋所定名为“Chlorellasp”的海洋微藻中的甘油脂及其脂肪酸种类和组成特点。结果表明，Chlorella sp.中的非极性脂主要为三脂酰甘油，极性甘油脂有10种。其中，一般培养条件下（温度23℃：光照，周期L/D14:10，强度60umolm-2-S-l）三脂酰甘油约占总脂的31 mol%，极性甘油脂约占总脂的69 rriol%。10种极性甘油脂是单半乳糖甘油二脂( monogalactosyldiacylglycerol． MGDG)、 双半乳糖甘油二脂( diagalactosyldiacylglycerol ， DGDG)、 硫代异鼠李糖甘油二脂( sulfoquinovosyldiacylglycerol，SQDG)、磷脂酰甘油(phosphatatidylglycerol，PG)、磷脂酰乙醇胺(phosphatidylethanolamine，PE)、磷脂酰胆碱( phosphatidylcholine，PC)、磷脂酰肌醇(phosphatidylinositol，PI)、磷脂酰丝氨醴(phosphatidylserine，Ps)、l，2-二酰基甘油-0-4，．（ⅣMⅣ-三甲基）高丝氨酸（diacylglyceryltrimethylhomoserine，DGTS）以及一种未能完全肯定，但可能是一中氯硫脂( chlorosulfolipid，CSL)。其中MGDG、DGDG、SQDG和PG是构成光合膜的主要成分，也是Chlorella sp中的主要极性脂。甜菜碱脂DGTS和磷脂PC是构成非光合膜的主要组分。Chlorella sp.中的主要脂肪酸为C16:0、C16:1耜C20：5（EPA)，后者主要存在于MGDG、DGDG和DGTS中，而三脂酰甘油也含有接近7%的EPA。 海洋微藻Chlorella sp.1061虽然被归属到绿藻纲绿藻目小球藻属，但是我们的研究表明，其色素、极性脂皮其脂肪酸组成与其它小球藻属藻类存在这很大差异Chl b是绿藻纲藻类中最主要的光合色素之一，1 6：4(n-3)和l 8：3(n-3)是绿藻微藻的主要脂肪酸，然而所有这些绿藻的特征化合物均未在Chlorella sp. 1061中检测到。DGTS和20:5(n-3)存在于很多的海洋微藻中，我们从Chlorella sp. 1061 中分离到占总极性甘油脂8 mo1%的DGTS，并从MGDG、DGDG和DGTS等极性甘油脂中检测到大量的20:5(n-3)。但是一般认为，小球藻属藻类中不舍这两种化合物。根据Chlorella sp. 1061的以上特点，这种藻不应该被归到小球藻属中。另外，由于Chlorella sp. 1061在色素、膜脂和脂肪酸组成特征方面大眼藻纲( Eustigmatophyceae)中的微绿球藻（Nannochloropsis）非常相似，因此，我们认为ChloreHa sp. 1061可能是Nannochloropsis中的一个种。但是未得到更进一步的证明和权威的认可之前，本文中我们仍然沿用ChloreHa sp,这一名称。 许多藻类中DGTS和PC -般不会同时存在，或者说一个存在时另外的一个的含量非常低。由此有人认为DGTS和PC之间存在着相互替代的关系。然而本研究中发现正常培养条件下Chlorella sp.中的DGTS和PC含量均较高（约10%）。磷处理实验结果表明，磷缺乏时Chlore Ha sp,中DGTS舍量大幅升高，而同时PC含量相应下降许多：但高浓度的磷并不能提高PC含量和降低DGTS含量，说明Chlorella sp,中DGTS仍可起替代PC的作用，然而PC可能并不能替代DGTS。Chlorella sp.中MGDG和DGTS脂肪酸组成及其位置分布结果显示，它们的组成和分布相似;在老化培养过程中MGDG和DGTS表现出周期性的相反的含量升高、降低的趋势，这进一步说明MGDG和DGTS之间存在着特殊的关系，MGDG可能合成自DGTS。 海洋微藻富含有利于人体健康的长链不饱和脂肪酸，如何提高微藻脂肪酸特别是多不饱和脂肪酸产量是目前研究的热点之一。本文首次报道了同时加入葡萄糖和硫代硫酸钠对Chlorelta sp,的生长、脂类组成和脂肪酸总产量的影响，结果显示葡萄糖和硫代硫酸钠存在明显而且强烈的互作，二者在培养液中的同时存在显著刺激了脂肪酸总产量的积累，在培养液中分别加入2.5 mM的葡萄糖和5mM的硫代硫酸钠，脂肪酸的产量可以比对照提高78%。而低浓度的葡萄糖和硫代硫酸钠对Chlorella sp.脂肪酸组成影响变化不明显，甚至在硫代硫酸钠存在下令人感兴趣的EPA含量还略有升高。显然，在Chlorella sp.培养中同时加入低浓度的葡萄糖和硫代硫酸钠是极具潜力的提高脂产量的方法，也可作为提高培养微藻其它活性物质产量借鉴的方法。在不久的将来，这种培养方法很可能发展成为生产实践中提高Chlore sp．乃至其它微藻脂肪酸、EPA和其它活性物质产量的经济有效的新途径。

Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure

The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2-1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 Published by Elsevier B.V.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

Gap states and microstructure of microcrystalline silicon thin films

The density of states (DOS) above Fermi level of hydrogenated microcrystalline silicon (mu c-Si H) films is correlated to the material microstructure. We use Raman scattering and infrared absorption spectra to characterize the structure of the films made with different hydrogen dilution ratios. The DOS of the films is examined by modulated photocurrent measurement. The results have been accounted for in the framework of a three-phase model comprised of amorphous and crystalline components, with the grain boundary as the third phase. We observed that the DOS increases monotonically as the grain boundary volume fractions f(gb) is increased, which indicates a positive correlation between the DOS and the grain boundary volume fraction.

Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films

Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.

Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films

Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmission electron microscope, X-ray diffraction (XRD) spectrum and Raman Scattering spectrum. The results showed that the diffraction peaks in XRD spectrum were at 2theta approximate to 47degrees and the exponent of crystalline plane of nc-Si in the film was (220). A considerable reason was electric field derived from dc bias made the bonds of Si-Si array according to a certain orient. The size and crystalline volume fraction of nc-Si in boron-doped films were intensively depended on the deposited parameters: diborane (B2H6) doping ratio in silane (SiH4), silane dilution ratio in hydrogen (H-2), rf power density, substrate's temperature and reactive pressure, respectively. But preferred growth of nc-Si in the boron-doped nc-Si:H films cannot be obtained by changing these parameters. (C) 2004 Elsevier Ltd. All rights reserved.

Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma

This paper reports on the preparation and characterization of hydrogenated amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma. Carbon-rich a-SiC:H film with band gap of up to 3.3 eV has been achieved. IR and UV Vis spectra were employed to characterize the chemical bonding and optical properties of as-prepared films. It is shown that hydrogen dilution is crucial in obtaining these wide band gap carbon-rich films. Raman and PL measurements were performed to probe the microstructure and photoelectronic properties of these films before and after annealing. Films with intermediate carbon concentration seem more defective and exhibit stronger photoluminescence and subband absorption than others. Films with different compositions exhibit different annealing behaviours. For silicon rich and carbon rich films, high temperature annealing results in the formation of silicon crystallites and graphite clusters, respectively. (C) 2003 Elsevier B.V. All rights reserved.

Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from a mixture of SiH4 diluted in H, The effect of hydrogen dilution ratios R-H = [H-2]/[SiH4] on microstructure of the films was investigated. Photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that more the crystalline volume fraction in the silicon films, the higher mobility life-time product (mu tau), better the stability and lower the photosensitivity. Those diphasic films contained 8%-31% crystalline volume fraction can gain both the fine photoelectronic properties and high stability. in the diphasic (contained 12% crystalline volume fraction) solar cell, we obtained a much lower light-induced degradation of similar to 2.9%, with a high initial efficiency of 10.01% and a stabilized efficiency of 9.72% (AM1.5, 100 mW/cm(2)). (c) 2005 Elsevier B.V. All rights reserved.

Transition films from amporphous to microcrystalline silicon and solar cells

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasmaenhanced chemical vapor deposition (VHF-PECVD)from a mixture of SiH4 diluted in H-2. The effect of hydrogen dilution ratios R = [H-2]/[SiH4] on the microstructure of the films was investigated. The photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that the diphasic films gain both the fine photoelectric properties like a-Si: H and high stability like mu w-Si:H. By using the diphasic silicon films as the intrinsic layer, p-i-n junction solar cells were prepared. Current-voltage (J-V) characteristics and stability of the solar cells were measured under an AM1.5 solar simulator. We observed a light-induced increase of 5.2% in the open-circuit voltage (V-oc) and a light-induced degradation of similar to 2.9% inefficiency.

NIP a-Si : H solar cells on stanless steel with p-type nc-Si : H window layer

The successful application of boron-doped hydrogenated nanocrystalline silicon as window layer in a-Si: H nip solar cells on stainless steel foil with a thickness of 0.05 mm is reported. Open circuit voltage and fill factor of the fabricated solar cell were 0.90V and 0.70 respectively. The optical and structural properties of the p-layers have been investigated by using UV-VIS and Raman spectroscopy. It is confirmed that the p-layer is hydrogenated nanocrystalline silicon with a wide optical gap due to quantum size effect.

Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using tirisilane

We explored the deposition of hydrogenated amorphous silicon (a-Si: H) using trisilane (Si3H8) as a gas precursor in a radiofrequency plasma enhanced chemical vapour deposition process and studied the suitability of this material for photovoltaic applications. The impact of hydrogen dilution on the deposition rate and microstructure of the films is systematically examined. Materials deposited using trisilane are compared with that using disilane (Si2H6). It is found that when using Si3H8 as the gas precursor the deposition rate increases by a factor of similar to 1.5 for the same hydrogen dilution (R = [H-2]/[Si3H8] or [H-2]/[Si2H6])- Moreover, the structural transition from amorphous to nanocrystalline occurs at a higher hydrogen dilution level for Si3H8 and the transition is more gradual as compared with Si2H6 deposited films. Single-junction n-i-p a-Si: H solar cells were prepared with intrinsic layers deposited using Si3H8 or Si2H6. The dependence of open circuit voltage (V-oc) on hydrogen dilution was investigated. V-oc greater than 1 V can be obtained when the i-layers are deposited at a hydrogen dilution of 180 and 100 using Si3H8 and Si2H6, respectively.

Characterization of silicon carbide thin films and their use in colour sensor

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by plasma-enhanced chemical vapour deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source. The previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-Si1-xCx:H film, widen the valence controllability. The data show that films with optical gaps ranging from about 1.9 to 3.6 eV could be produced. In this work the influence of the hydrogen dilution ratio of the reactive gases on the a-Si1-xCx:H film properties was investigated. The microstuctural and photoelectronic properties of the silicon carbide films were characterized by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), and FT-IR spectrometry. The results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-Si1-xCx:H films. One pin structure was prepared by using the a-Si1-xCx:H film as the intrinsic layer. The light spectral response shows that this structure fits the requirement for the top junction of colour sensor. (c) 2004 Elsevier B.V. All rights reserved.

Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films

Erbium-doped hydrogenated amorphous silicon suboxide films containing silicon clusters (a-SiOx:H) were prepared. The samples exhibited photoluminescence (PL) peaks at around 750nm and 1.54 mu m, which could be assigned to the electron-hole recombination in silicon clusters and the intra-4f transition in Er3+, respectively. We compared annealing behaviors of Si clusters and Er3+ emission and found that Si clusters emission depends strongly upon crystallinity of Si clusters, whereas Er3+ emission is not sensitive to whether it is Si nanocrystals (nc-Si) or amorphous Si (a-Si) clusters. The erbium-doped a-SiOx:H films containing either a-Si clusters or nc-Si have the same kind of Er3+ -emitting centers. Based on these results, it is concluded that a-Si clusters can play the same role on Er3+ excitation as nc-Si. (c) 2004 Elsevier B.V. All rights reserved.