NIP a-Si : H solar cells on stanless steel with p-type nc-Si : H window layer


Autoria(s): Hu ZH; Liao XB; Diao HW; Xia CF; Zeng XB; Hao HY; Kong GL
Data(s)

2005

Resumo

The successful application of boron-doped hydrogenated nanocrystalline silicon as window layer in a-Si: H nip solar cells on stainless steel foil with a thickness of 0.05 mm is reported. Open circuit voltage and fill factor of the fabricated solar cell were 0.90V and 0.70 respectively. The optical and structural properties of the p-layers have been investigated by using UV-VIS and Raman spectroscopy. It is confirmed that the p-layer is hydrogenated nanocrystalline silicon with a wide optical gap due to quantum size effect.

Identificador

http://ir.semi.ac.cn/handle/172111/8700

http://www.irgrid.ac.cn/handle/1471x/63880

Idioma(s)

中文

Fonte

Hu, ZH; Liao, XB; Diao, HW; Xia, CF; Zeng, XB; Hao, HY; Kong, GL .NIP a-Si : H solar cells on stanless steel with p-type nc-Si : H window layer ,ACTA PHYSICA SINICA,JUN 2005,54 (6):2945-2949

Palavras-Chave #半导体材料 #hydrogenated nanocrystalline silicon
Tipo

期刊论文