等离子体效应对类氦氖Kα线系电偶极辐射的影响

采用离子球模型，通过自洽求解Boltzmann方程和Poisson方程，得到类氦氖离子Kα线系的两条电偶极辐射光谱能量随等离子体环境的漂移．结果显示，Kα线系电偶极谱线随等离子体电子密度增大发生红移，红移量与等离子体电子密度有近似的正比关系；随着等离子体电子温度的降低，光谱红移对等离子体电子密度的敏感性增大。另外，所研究的两条谱线间的能量间隔随等离子体电子密度的增大而减小，减小量随等离子体电子密度的变化也呈现出近似的线性规律。值得注意的是，类氦氖Kα线系中两条电偶极谱线分别为互组合线与共振谱线，而其能量差

Preparation and spectroscopic properties of Er3+-doped high silica glass fabricated by sintering nanoporous glass

A compact nonporous high silica (SiO2 % > 96%) glass containing 3400 ppm Er3+ ions, which was about ten times higher than that in Er-doped silica fiber amplifier (EDSFA), was synthesized by sintering porous glass immersed into erbium nitrate solution. The 1532 nm fluorescence has a FWHM (Full Width at Half Maximum) of 45 nm wider than that of EDSFA and possesses the glass with potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that Er3+ ions are located in a higher covalent environment which are comparable to those of aluminosilicate glass. (c) 2005 Elsevier B.V. All rights reserved.

High-reflectance 193 nm Al2O3/MgF2 mirrors

Thin-film single layers of Al2O3 and MgF2 were deposited upon super polished fused-silica by electron-beam evaporation. The subsequent optical constants n and k were reported for the spectral range of 180-230 nm. High-reflectance dense multilayer coatings for 193 nm were designed on the basis of the evaluated optical constants and produced. The spectra of the reflectance of HR coatings were compared to the theoretical calculations. HR mirrors of 27 layers with a reflectance of more than 98% were reported. (c) 2004 Elsevier B.V. All rights reserved.

High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films

Ta2O5 films were deposited by conventional electron beam evaporation method and then annealed in air at different temperature from 873 to 1273 K. It was found that the film structure changed from amorphous phase to hexagonal phase when annealed at 1073 K, then transformed to orthorhombic phase after annealed at 1273 K. The transmittance was improved after annealed at 873 K, and it decreased as the annealing temperature increased further. The total integrated scattering (TIS) tests and AFM results showed that both scattering and root mean square (RMS) roughness of films increased with the annealing temperature increasing. X-ray photoelectron spectroscopy (XPS) analysis showed that the film obtained better stoichiometry and the O/Ta ratio increased to 2.50 after annealing. It was found that the laser-induced damage threshold (LIDT) increased to the maximum when annealed at 873 K, while it decreased when the annealing temperature increased further. Detailed damaged models dominated by different parameters during annealing were discussed. (C) 2008 Elsevier B. V. All rights reserved.

High refractive index TiO2 film deposited by electron beam evaporation

The well known 'crystal seed' theory is first applied in this work to prepare TiO2 film: a high refractive index rutile TiO2 film is grown by electron beam evaporation on the rutile seed formed by 1100 degrees C annealing. The average n is larger than 2.4, by far the highest in all the authors' TiO2 films. The films are characterised by optical properties, microstructure and surface morphologies. It is found that the refractive index shows positive relation with the crystal structure, grain size, and packing density and roughness of the film. The film has lower density of granularity and nodule defects on the surface than those of the film deposited by magnetron sputtering. The result shows attractive application in complex filter and laser coatings.

单核细胞、N K细胞和T 细胞在猪-猕猴延迟性异种移植排斥反应中的作用

　目的　观察单核细胞、NK细胞和T 细胞在猪2猕猴延迟性异种移植排斥反应(DXR) 中的作用。方法　建立湖北白猪2云南猕猴的腹腔异位心脏移植模型,实验分为2 组:对照组( n = 5) ,不使用中华眼睛蛇毒因( Y2CVF) ;实验组( n = 4) 应用Y2CVF 完全清除受者体内补体。2 组受 体猴均采用环孢素A(CsA) ,环磷酰胺(CTX) 和甲基强的松龙(MP) 三联免疫抑制治疗。免疫组织 化学方法检测移植心组织中细胞间黏附分子( ICAM)21 、肿瘤坏死因子( TNF)2α、单核细胞、NK 细 胞和T 细胞的表达。结果　对照组3 个移植心在15～60 min 内发生超急性排斥反应(HAR) ,另2 个分别存活22 h 及6 d ,移植心均未见明显的炎性细胞浸润及ICAM21 和TNF2α的表达。实验组 移植心存活时间分别为8 、10 、13 和13 d ,移植物浸润细胞中可见大量的单核细胞(50 %) ,少量的 NK细胞(8 %～10 %) ,CD4 + T 细胞(15 %) 和CD8 + T 细胞(25 %) 。移植物血管内皮细胞表面出现 ICAM21 的表达上调,移植物间质中出现TNF2α的表达增加。结论　单核细胞、NK细胞和T 细胞 介导的移植物损伤,在应用Y2CVF 处理的猪2猕猴DXR 发生中发挥重要作用　

High transmission of slow light in the photonic crystal waveguide bends

We present the research on the transmission characteristic of slow-light-mode in the photonic crystal line-defect waveguide bends on SOL After optimizing the structure parameters in the vicinity of the bends, the normalized transmission efficiency of slow-light-mode through the photonic crystal 60 degree and 120 degree waveguide bends are as high as 80% and 60% respectively, which are 10 times higher than that in the undeformed case. To slow down light further, we design novel coupled cavity waveguide bend structures with high quality-factor. High normalized transmission efficiency of 75% and low group velocity of c/170 ( c is the light velocity in vacuum) are realized. These results are beneficial to enhance the slow light effect of photonic crystal structures and improve the miniaturization and integration of photonic crystal slow light devices.

High efficiency operation of butt joint line-defect-waveguide microlaser in two-dimensional photonic crystal slab

Butt joint line-defect-waveguide microlasers are demonstrated on photonic crystal slabs with airholes in a triangular lattice. Such microlaser is designed to increase the output power from the waveguide edge directly. The output power is remarkably enhanced to 214 times higher by introducing chirped structure in the output waveguide. The lasing mode operates in the linear dispersion region of the output waveguide so that the absorption loss due to the band-edge effect is reduced. The laser resonance is illustrated theoretically using the finite difference time domain method. A practical high power efficiency of 20% is obtained in this microlaser. (C) 2008 American Institute of Physics.

Effect of electron-electron scattering on spin dephasing in a high-mobility low-density two-dimensional electron gas

By utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high-mobility low density two-dimensional electron gas in a GaAs/Al0.35Ga0.65As heterostructure in the dependence on temperature from 1.5 to 30 K. It is found that the spin relaxation/dephasing time under a magnetic field of 0.5 T exhibits a maximum of 3.12 ns around 14 K, which is superimposed on an increasing background with rising temperature. The appearance of the maximum is ascribed to that at the temperature where the crossover from the degenerate to the nondegenerate regime takes place, electron-electron Coulomb scattering becomes strongest, and thus inhomogeneous precession broadening due to the D'yakonov-Perel' mechanism becomes weakest. These results agree with the recent theoretical predictions [J. Zhou et al., Phys. Rev. B 15, 045305 (2007)], which verify the importance of electron-electron Coulomb scattering to electron spin relaxation/dephasing.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

Hole-mediated electric field tunable high Curie temperature in Mn-doped wurtzite ZnO nanowires

The hole-mediated Curie temperature in Mn-doped wurtzite ZnO nanowires is investigated using the k center dot p method and mean field model. The Curie temperature T-C as a function of the hole density has many peaks for small Mn concentration (x(eff)) due to the density of states of one-dimensional quantum wires. The peaks of T-C are merged by the carriers' thermal distribution when x(eff) is large. High Curie temperature T-C > 400 K is found in (Zn,Mn)O nanowires. A transverse electric field changes the Curie temperature a lot. (Zn,Mn)O nanowires can be tuned from ferromagnetic to paramagnetic by a transverse electric field at room temperature. (c) 2007 American Institute of Physics.

Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations

Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity GaN epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. Two trap states with activation energies of 0.12 and 0.62 eV are evaluated from two luminescence peaks at 141.9 and 294.7 K in the luminescence curve. Our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. Our investigations suggest that the lower level at 0.12 eV might originate from C-N, which behaves as a hole trap state; the deeper level at 0.62 eV can be correlated with V-Ga that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra.

Design of high polarization and single-mode photonic crystal laser

The dipole mode in triangular photonic crystal single defect cavity is degenerate. By deforming the lattice in photonic crystal we can obtain non-degenerate dipole modes. Lattice deforming in the whole photonic crystal destroys the characteristic of symmetry, so the distribution of the electromagnetic field is affected and the polarization of the electromagnetic field is also changed. Lattice deforming divides the degenerate dipole mode into the x-dipole mode and the y-dipole mode. It is found that the non-degenerate modes have better properties of polarization. So the high polarization and single dipole mode photonic crystal laser can be achieved by deforming the lattice of photonic crystal. In this paper, we simulated the cavity in photonic crystal slab and mainly calculated the quality factor of x-dipole mode under different deforming conditions and with different filling factors. The properties of polarization of x-dipole and y-dipole modes are also calculated. It is found that the ratio of intensities of E-x to E-y in x-dipole mode and that of E-y to E-x in y-dipole mode are 44 and 27, respectively.