Effect of In0.2Ga0.8As and In0.2Al0.8As combination layer on band offsets of InAs quantum dots

We demonstrate the self-organized InAs quantum dots capped with thin and In0.2Al0.8As and In0.2Ga0.8As combination layers with a large ground and first excited energy separation emission at 1.35 mum at room temperature. Deep level transient spectroscopy is used to obtain quantitative information on emission activation energies and capture barriers for electrons and holes. For this system, the emission activation energies are larger than those for InAs/GaAs quantum dots. With the properties of wide energy separation and deep emission activation energies, self-organized InAs quantum dots capped with In0.2Al0.8As and In0.2Ga0.8As combination layers are one of the promising epitaxial structures of 1.3 mum quantum dot devices. (C) 2004 American Institute of Physics.

Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 mu m emission self-assembled InAs/GaAs quantum dots

Self-assembled InAs quantum dots (QDs) with differing deposition thicknesses covered by InxAl1-xAs (x = 0.2, 0.3) and In0.2Ga0.8As combination strain-reducing layers (CSRLs) were grown by molecular beam epitaxy. Their structural and optical properties were investigated by atomic force microscopy and photoluminescence spectroscopy, respectively. The emission peak position of InAs QDs capped by CSRL can reach 1.34 mum at room temperature with a relatively larger energy splitting of 93 meV between the ground and first excited states.

Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

Self-assembled InAs/GaAs quantum dots covered by the 1-nm InxAl(1-x)As (x = 0.2,0.3) and 3-nm In0.2Ga0.8As combination strain-reducing layer are fabricated, whose height can take up to 30-46 nm. The luminescence emission at a long-wavelength of 1.33 mum and the energy separation between the ground and the first-excited state of 86 meV are observed at room temperature. Furthermore, comparative study proves that the energy separation can increase to 91 meV by multiple stacking.

Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer

In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states. (C) 2003 Elsevier Science Ltd. All rights reserved.

Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined InAlAs and InGaAs overgrowth layer on InAs/GaAs QDs. We found that QDs formed on GaAs (100) substrate by InAs deposition followed by the InAlAs and InGaAs combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV. These results are attributed to the fact that InAs/GaAs intermixing caused by In segregation at substrate temperature of 520 degreesC can be considerably suppressed by the thin InAlAs layer and the strain in the quantum dots can be reduced by the combined InAlAs and InGaAs layer. (C) 2002 American Institute of Physics.

Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers

We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources.

Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR

于2010-11-23批量导入

Study on the forecast effects of PI method to the north and southwest China

In this paper, the codes of Pattern Informatics (PI) method put forward by Rundle et al. have been worked out according to their algorithm published, and the retrospective forecast of PI method to North China (28.0 degrees-42.0 degrees N, 108.0 degrees-125.0 degrees E) and to Southwest China (22.0 degrees-28.3 degrees N, 98.0 degrees-106.0 degrees E) has been tested. The results show that the hit rates in different regions show a great difference. In Southwest China, 32 earthquakes with M(L)5.0 or larger have occurred during the predicted time period 2000-2007, and 26 out of the 32 earthquakes occurred in or near the hot spots. In North China, the total number of M(L)5.0 or larger was 12 during the predicted time period 2000-2007, and only 3 out of the 12 earthquakes occurred in or near the hot spots. From our results, we hold that if the PI method could be applied to all kinds of regions, the parameters associated with time points and time windows should be chosen carefully to obtain the higher hit rate. We also found that the aftershocks in a strong earthquake sequence affect the PI results obviously. Copyright (c) 2009 John Wiley & Sons, Ltd.

Study on the forecast effects of PI method to the north and southwest China

In this paper, the codes of Pattern Informatics (PI) method put forward by Rundle et al. have been worked out according to their algorithm published, and the retrospective forecast of PI method to North China (28.0 degrees-42.0 degrees N, 108.0 degrees-125.0 degrees E) and to Southwest China (22.0 degrees-28.3 degrees N, 98.0 degrees-106.0 degrees E) has been tested. The results show that the hit rates in different regions show a great difference. In Southwest China, 32 earthquakes with M(L)5.0 or larger have occurred during the predicted time period 2000-2007, and 26 out of the 32 earthquakes occurred in or near the hot spots. In North China, the total number of M(L)5.0 or larger was 12 during the predicted time period 2000-2007, and only 3 out of the 12 earthquakes occurred in or near the hot spots. From our results, we hold that if the PI method could be applied to all kinds of regions, the parameters associated with time points and time windows should be chosen carefully to obtain the higher hit rate. We also found that the aftershocks in a strong earthquake sequence affect the PI results obviously. Copyright (c) 2009 John Wiley & Sons, Ltd.