Experimental study on heavy ion single event effects in SOI SRAMs

Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and space applications. The use of SOI has been motivated by the full dielectric isolation of individual transistors, which prevents latch-up. The sensitive region for charge collection in SOI technologies is much smaller than for bulk-silicon devices potentially making SOI devices much harder to single event upset (SEU). In this study, 64 kB SOI SRAMs were exposed to different heavy ions, such as Cu, Br, I, Kr. Experimental results show that the heavy ion SEU threshold linear energy transfer (LET) in the 64 kB SOI SRAMs is about 71.8 MeV cm(2)/mg. Accorded to the experimental results, the single event upset rate (SEUR) in space orbits were calculated and they are at the order of 10(-13) upset/(day bit).

A latest developed all permanent magnet ECRIS for atomic physics research at IMP

Electron cyclotron resonance (ECR) ion sources have been used for atomic physics research for a long time. With the development of atomic physics research in the Institute of Modern Physics (IMP), additional high performance experimental facilities are required. A 300 kV high voltage (HV) platform has been under construction since 2003, and an all permanent magnet ECR ion source is supposed to be put on the platform. Lanzhou all permanent magnet ECR ion source No. 2 (LAPECR2) is a latest developed all permanent magnet ECRIS. It is a 900 kg weight and circle divide 650 mm X 562 mm outer dimension (magnetic body) ion source. The injection magnetic field of the source is 1.28 T and the extraction magnetic field is 1.07 T. This source is designed to be running at 14.5 GHz. The high magnetic field inside the plasma chamber enables the source to give good performances at 14.5 GHz. LAPECR2 source is now under commissioning in IMP. In this article, the typical parameters of the source LAPECR2 are listed, and the typical results of the preliminary commissioning are presented.

Experimental study on the electric-sweep scanner and ion beam emittance of electron cyclotron resonance ion source

With a latest developed electric-sweep scanner system, we have done a lot of experiments for studying this scanner system and ion beam emittance of electron cyclotron resonance (ECR) ion source. The electric-sweep scanner system was installed on the beam line of Lanzhou electron resonance ion source No. 3 experimental platform of Institute of Modem Physics. The repetition experiments have proven that the system is a relatively dependable and reliable emittance scanner, and its experiment error is about 10%. We have studied the influences of the major parameters of ECR ion source on the extracted ion beam emittance. The typical results of the experiments and the conclusions are presented in this article.

Experimental study of the high-voltage breakdown and simulations for the RFQ cooler and buncher RFQ1L

The RFQ cooler and buncher RFQ1L is one of the key parts of the being-built super-heavy nuclide research spectrometer. In order to understand the high-voltage breakdown phenomenon, the voltages between electrodes have been measured. In addition, more extensive simulations have been performed for better understanding and optimizing the RFQ1L work points.

Measurement of neutron flow with the external target experimental device on CSR

With the construction of the neutron detection wall at the external target position on Heavy Ion Research Facility in Lanzhou-Cooling Storage Ring (HIRFL-CSR), it will be possible to detect high energy neutron. A BUU model is applied to simulate the flow in both symmetric (Ni+Ni, Pb+Pb) and asymmetric(Pb+Ni) systems. It is shown that at above several hundreds MeV/u, the flow signals are very obvious and depend clearly on the centrality of the collisions. Based on the products in the forward angle less than 20 degrees, the simulation also reveals that the determination of the reaction plane and the selection of the impact parameter, both of which are essential in the flow measurement, are well implemented. The double event and its influence on the determination of the neutron flow are also simulated.