Mode coupling and vertical radiation loss for whispering-gallery modes in 3-D microcavities

The characteristics of whispering-gallery modes (WGMs) in 3-D cylindrical, square, and triangular microcavities with vertical optical confinement of semiconductors are numerically investigated by the finite-difference time-domain (FDTD) technique. For a microcylinder with a vertical refractive index 3.17/3.4/3.17 and a center layer thickness 0.2 mu m, Q-factors of transverse electric (TE) WGMs around wavelength 1550 nm are smaller than 10(3), as the radius R < 4 mu m and reach the orders of 10(4) and 10(6) as R = 5 and 6 mu m, respectively. However, the Q-factor of transverse magnetic (TM) WGMs at wavelength 1.659 mu m reaches 7.5 x 10(5) as R = 1 mu m. The mode coupling between the WGMs and vertical radiation modes in the cladding layer results in vertical radiation loss for the WGMs. In the microcylinder, the mode wavelength of TM WGM is larger than the cutoff wavelength of the vertical radiation mode with the same mode numbers, so TM WGMs cannot couple with the vertical radiation mode and have high Q-factor. In contrast, TE WGMs can couple with the corresponding vertical radiation mode in the 3-D microcylinder as R < 5 mu m. However, the mode wavelength of the TE WGM approaches (is larger than) the cutoff wavelength of the corresponding radiation modes at R = 5 mu m (6 mu m), so TE WGMs have high Q-factors in such microcylinders too. The results show that a critical lateral size is required for obtaining high, Q-factor TE WGMs in the 3-D microcylinder. For 3-D square and triangular microcavities, we also find that the Q-factor of TM WGM is larger than that of TE WGM.

Design and fabrication of polarization-independent micro-ring resonators

Origin of polarization sensitivity of photonic wire waveguides (PWWs) is analysed and the effective refractive indices of two different polarization states are calculated by the three-dimensional full-vector beam propagation method. We find that PWWs are polarization insensitive if the distribution of its refractive index is uniform and the cross section is square. An MRR based on such a polarization-insensitive PWW is fabricated on an 8-inch silicon-on-insulator wafer using 248-nm deep ultraviolet lithography and reactive ion etching. The quasi-TE mode is resonant at 1542.25 nm and 1558.90 nm, and the quasi-TM mode is resonant at 1542.12 nm and 1558.94 nm. The corresponding polarization shift is 0.13 nm at the shorter wavelength and 0.04 nm at the longer wavelength. Thus the fabricated device is polarization independent. The extinction ratio is larger than 10 dB. The 3 dB bandwidth is about 2.5 nm and the Qvalue is about 620 at 1558.90 nm.

Highly anisotropic and electric field tunable Zeeman splittings in Mn-doped CdS nanowires

The electronic structure, Zeeman splitting, and g factor of Mn-doped CdS nanowires are studied using the k center dot p method and the mean field model. It is found that the Zeeman splittings of the hole ground states can be highly anisotropic, and so can their g factors. The hole ground states vary a lot with the radius. For thin wire, g(z) (g factor when B is along the z direction or the wire direction) is a little smaller than g(x). For thick wire, g(z) is mcuh larger than g(x) at small magnetic field, and the anisotropic factor g(z)/g(x) decreases as B increases. A small transverse electric field can change the Zeeman splitting dramatically, so tune the g(x) from nearly 0 to 70, in thick wire. The anisotropic factor decreases rapidly as the electric field increases. On the other hand, the Zeeman splittings of the electron ground states are always isotropic.

Electric-field tuning s-d exchange interaction in quantum dots

We investigate theoretically the electron-hole pair states in CdTe quantum dot (QD) containing a single Mn2+ ion by the magneto-optical spectrum tuned by the electric field. It is shown that the electric field does not only tune the spin splitting via the sp-d exchange interaction but also affect significantly the anticrossing behavior in the photoluminescence spectrum. This anticrossing is caused by the s-d exchange interaction and/or the hole mixing effect, which depends sensitively on the shape of the QD. (C) 2008 American Institute of Physics.

Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

Hole-mediated electric field tunable high Curie temperature in Mn-doped wurtzite ZnO nanowires

The hole-mediated Curie temperature in Mn-doped wurtzite ZnO nanowires is investigated using the k center dot p method and mean field model. The Curie temperature T-C as a function of the hole density has many peaks for small Mn concentration (x(eff)) due to the density of states of one-dimensional quantum wires. The peaks of T-C are merged by the carriers' thermal distribution when x(eff) is large. High Curie temperature T-C > 400 K is found in (Zn,Mn)O nanowires. A transverse electric field changes the Curie temperature a lot. (Zn,Mn)O nanowires can be tuned from ferromagnetic to paramagnetic by a transverse electric field at room temperature. (c) 2007 American Institute of Physics.

Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells

Spin splitting of the AlyGa1-yAs/GaAs/AlxGa1-xAs/AlyGa1-yAs (x not equal y) step quantum wells (QWs) has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry (SIA). The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.

Electric-tunable magneto resistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure

The electric-tunable spin-independent magneto resistance effect has been theoretically investigated in ballistic regime within a two-dimensional electron gas modulated by magnetic-electric barrier nanostructure. By including the omitted stray field in previous investigations oil analogous structures, it is demonstrated based on this improved approximation that the magnetoresistance ratio for the considered structure can be efficiently enhanced by a proper electric barrier up to the maximum value depending on the specific magnetic suppression. Besides, it is also shown the introduction of positive electrostatic modulation can effectively overcome the degradation of magnetoresistance ratio for asymmetric configuration and enhance the visibility of periodic pattern induced by the size effect, while for an opposite modulation the system magnetoresistance ratio concerned may change its sign. (C) 2009 Elsevier B.V. All rights reserved.

Electric field driven quantum phase transition between band insulator and topological insulator

We demonstrate theoretically that electric field can drive a quantum phase transition between band insulator to topological insulator in CdTe/HgCdTe/CdTe quantum wells. The numerical results suggest that the electric field could be used as a switch to turn on or off the topological insulator phase, and temperature can affect significantly the phase diagram for different gate voltage and compositions. Our theoretical results provide us an efficient way to manipulate the quantum phase of HgTe quantum wells.

Analysis of mode characteristics for equilateral-polygonal resonators with a center hole

Mode characteristics for equilateral triangles, squares, and hexagonal resonators with a center hole are numerically simulated by the finite-different time domain (FDTD) technique. The center hole does not break the symmetry behavior of the original resonators and can result in modification of the mode field patterns and mode Q factors. In an equilateral triangle resonator the center hole can suppress the symmetry state of degenerate states with the merit of single mode operation. In a square resonator, the Q factor can be enhanced for some modes with a suitable size of the hole. For a hexagonal resonator with a side length of 1 mu m and a refractive index of 3.2, the mode Q factors first gradually decrease with the increase of the hole diameter for modes at a wavelength of about 1500 nm, then the modes transform to that of a microdisk with a jump of the mode wavelength as the hole diameter approaches 0.7 mu m. Finally, the mode Q factors greatly enhance as the hole diameter reaches about 1 mu m. The results indicate that the center hole can greatly modify mode characteristics, especially that of the mode Q factor. (C) 2009 Optical Society of America

Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes

Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.

Mode quality factor based on far-field emission for square resonators

The quality factors of modes in square resonators are calculated based on the far-field emission of the analytical field distribution. The obtained quality factors are in reasonable agreement with those calculated by the finite-difference time-domain (FDTD) technique and Pade approximation method. The emission power in the square diagonal directions for whispering-gallery-like modes in square resonators is zero due to the interference cancellation caused by the odd field distributions relative to the diagonal mirror planes, so they have larger quality factors than the modes with even field distribution.

Modes in square resonators

Modes in square resonators are analyzed and classified according to the irreducible representations of the point group C-4v. If the mode numbers p and q that denote the number of wave nodes in the directions of two orthogonal square sides are unequal and have the same even-odd characteristics, the corresponding double modes are accidentally degenerate and can be combined into two new distributions with definite parities relative to the square diagonal mirror planes. The distributions with odd parities belong to the whispering-gallery-like modes in square resonators. The mode frequencies and quality factors are also calculated by the finite-difference time-domain technique and Pade approximation method. The numerically calculated mode frequencies agree with the theoretical ones very well and the whispering-gallery-like modes have quality factors much higher than other modes, including their accidentally degenerate counterparts in square resonators.

Experimental observation of resonant modes in GaInAsP microsquare resonators

GaInAsP-InP microsquare resonators with InP pedestals are fabricated by two-step chemical etching, and obvious mode peaks are observed in the photoluminescence spectra of the resonators. The mode Q-factors about 500 are obtained for a microsquare resonator with the side length of 7 mu m. The experimental mode interval is in agreement with that predicted by the light ray method based on the cavity length, instead of that of the whispering-gallery (WG)-like modes, which has mode interval twice of that determined by the cavity length. The finite-difference time-domain simulation shows that a little asymmetry may greatly reduce the difference of the Q-factors between the WG-like modes and the other modes.

Growth of aligned single-walled carbon nanotubes under ac electric fields through floating catalyst chemical vapour deposition

Through floating catalyst chemical vapour deposition(CVD) method, well-aligned isolated single-walled carbon nanotubes (SWCNTs) and their bundles were deposited on the metal electrodes patterned on the SiO2/Si surface under ac electric fields at relatively low temperature(280 degrees C). It was indicated that SWCNTs were effectively aligned under ac electric fields after they had just grown in the furnace. The time for a SWCNT to be aligned in the electric field and the effect of gas flow were estimated. Polarized Raman scattering was performed to characterize the aligned structure of SWCNTs. This method would be very useful for the controlled fabrication and preparation of SWCNTs in practical applications.