Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition

Lattice-matched (Delta(a/a) = 1.8-3.4%) (001) LiGaO2 substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650 degrees C with oxygen partial pressure of 20Pa. XRD shows that a highly c-axis-oriented ZnO film can be deposited on (001) LiGaO2 substrate at 500 degrees C. AFM images reveal the surfaces of as-deposited ZnO films are smooth and root-mean-square values are 6.662, 5.765 and 6.834 nm at 350, 500 and 650 degrees C, respectively. PL spectra indicate only near-band-edge UV emission appears in the curve of ZnO film deposited at 500 degrees C. The deep-level emission of ZnO film deposited at 650 degrees C probably results from Li diffusion into the film. All the results illustrate substrate temperature plays a pretty important role in obtaining ZnO film with a high quality on LiGaO2 substrate by pulsed-laser deposition. (c) 2006 Elsevier B.V. All rights reserved.

MOCVD growth and properties of ZnO thin films on LiNbO3 substrates

ZnO thin films were grown on (0001)LiNbO3 substrates by the MOCVD technique. The substrate temperatures during growth were changed from 400 to 600 degrees C. The X-ray diffraction (XRD) pattern of the ZnO film showed a strong [002] reflection peak, and the peak intensity was dependent on substrate temperature. The ZnO columnar grains were highly oriented along the (002) direction when the film processing temperature was 600 degrees C. The optical transmission and PL results also indicated that highest crystalline quality of the ZnO films could be obtained at elevated temperatures. (c) 2005 Elsevier B.V. All rights reserved.

Growth of composite sapphire/Ti : sapphire by the hydrothermal method

Composite sapphire/Ti:sapphire crystals for high-power laser application were grown by the hydrothermal method. The results of the X-ray rocking curve analysis indicate high crystalline quality of the surface Al2O3 material. The strong bonding between the overgrown Al2O3 and seed Ti:Al2O3 crystals is indispensable for withstanding high thermal stresses produced by intense optical pumping. The optical loss at the boundary of the composite crystal is considerably low, indicating the lack of scattering centers. (c) 2005 Elsevier B.V. All rights reserved.

Crystal growth and properties of Yb : FAP laser crystal

A large and transparent Yb:FAP crystal with dimensions up to circle divide 30 mm x 85 mm has been grown by the Czochralski method. The preparation of the raw material has been investigated. X-ray power diffraction studies of Yb:FAP crystal confirm that the as-grown crystal is isostructural with the FAP crystal. The crystalline quality has been studied using X-ray rocking curve analysis. The segregation coefficient of Yb3+ in the Yb:FAP crystal has been also determined. Linear thermal expansion coefficients in [001] and [100] directions have been measured in the 30-800 degrees C temperature range. (c) 2005 Elsevier B.V. All rights reserved.

Growth and spectral properties of Er:Gd2SiO5 crystal

Er3+ -doped Gd2SiO5 (Er:GSO) single crystal with dimensions of circle divide 35 x 40 mm(3) has been grown by the Czochralski method. The absorption and fluorescence spectra of the Er:GSO crystal were measured at room temperature. The spectral parameters were calculated based on Judd-Ofelt theory, and the intensity parameters Omega(2), Omega(4) and Omega 6 are obtained to be 6.168 x 10(-20), 1.878 x 10(-20), and 1.255 x 10(-20) cm(2), respectively. The emission cross-section has been calculated by Fuechtbauer-Ladenbury formula. (c) 2007 Elsevier B.V. All rights reserved.

华山松（Pinus armandi）地理变异的生态生理学研究

华山松(Pinus armandi)是我国西部高海拔温凉山区的主要树种，自然分布大约在北纬23° 30'-36°30'，东经88°50'-113°30'之间，横跨13个省（区）包括两个季风区，六个气候带。由于水平空间区域广阔，分布区中间地带又为川藏高原的高山峡谷区，群体疏散，基因的迁移和交流困难，致使南北群体出现深刻的遗传分化，并在形态上、生理上充分表达出来。研究结果表明: 1)华山松树高生长出现明显的地理渐变模式，在同一适宜的立地条件下，15年生的南方群体的树高会超出北方种源的2-3倍。针叶长度也同样具有明显的南北差异，南方群体较长。 2)地理因子相关分析表明纬度因子是主导因子，根据种源的地理坐标，利用中科院植物所植被数量生态学开放室有关数据库和生态信息系统(EIS)进行有关气候数据统计分析表明大多数环境气候因子主要是由纬度决定的。在环境因子当中，年平均温度和极端最低气温，在华山松地理变异过程中起主要作用。利用聚类分析方法，可把华山松大致分为南北两个地理型，正好与气候因子聚类而成的两个环境类型相对应，反映着两个自然地理区的自然生态因子的综合区别。 3)利用已有的幼林生长数据和我们在华山松进入杆材期(15年生)的树高调查结果，作相关分析，发现二者相关关系显著。因此，利用早期树高作生长预测在林木选育上是可行的。 4)根据六个种源测定结果，发现南方温暖湿润气候条件下华山松种子较大，种壳较薄，而北方种源种子相对较小，种皮要厚一些。 5)虽然种群之间中性盐及碱性溶液提取的种子蛋白含量差异明显，但没有地理变异趋势。分析多肽组成，中性盐溶种子蛋白也没有地理特征。但碱性溶液提取的种子蛋白多肽组成却有明显地域性。其中36KD多肽仅出现在北方种群中，南方种群则没发现有同样多肽。 6)西藏种源表现出了一种独特的生物学特性，其种子较大有南方种源特征，但种皮厚又带有北方种源的特点，除此之外，它的碱性溶液提取的种子蛋白中含有36KD多肽，因此它可能是南北两个类群中的中间类型。 7)用活体针叶作测材料时，没能检测出光谱特性的地理变异。但改用分离的叶绿体作试验材料，发现南方种群的光能吸收4阶导数光谱在680nm处的峰值较大，670nm峰值较小，而北方种群中出现了670nm峰值较大的类群，推测北方种群反应中心活力有下降趋势。另外，低温荧光发射光谱及低温荧光激发光谱也有明显的地域分化，表明体内色素状态有一定的地理变异。 8)时绿素a荧光诱导动力学测定表明，南方种群可变荧光(Fv/Fo)与光能转换效率(Fv/Fm)较高，北方种群则相对要小一些，与四阶导数吸收光谱测定结果吻合．利用饱和脉冲重复激发技术，发现光化学荧光淬灭(Qp)和非光化学荧光淬灭(Qn)在北方种群中较大，南方种群较小，其中，Qn变化非常明显，而Qp变化较小． 综合研究结果，除树高生长．针叶和种子形态外，36KD碱溶性种子蛋白多肽680nm处4阶导数吸收光谱峰值大小，可变荧光强度(Fv/Fo)光能转换效率(Fv/Fm)以及非化学荧光淬灭系数都带有明显的地理特征，与华山松生长和适应能力紧密相关，可作为生理指标应用于生态地理型的区分或华山松的早期选择。

Two Immunoregulatory Peptides with Antioxidant Activity from Tick Salivary Glands

Ticks are blood-feeding arthropods that may secrete immunosuppressant molecules, which inhibit host inflammatory and immune responses and provide survival advantages to pathogens at tick bleeding sites in hosts. In the current work, two families of immunoregulatory peptides, hyalomin-A and -B, were first identified from salivary glands of hard tick Hyalomma asiaticum asiaticum. Three copies of hyalomin-A are encoded by an identical gene and released from the same protein precursor. Both hyalomin-A and -B can exert significant anti-inflammatory functions, either by directly inhibiting host secretion of inflammatory factors such as tumor necrosis factor-alpha, monocyte chemotectic protein-1, and interferon-gamma or by indirectly increasing the secretion of immunosuppressant cytokine of interleukin-10. Hyalomin-A and -B were both found to potently scavenge free radical in vitro in a rapid manner and inhibited adjuvant-induced inflammation in mouse models in vivo. The JNK/SAPK subgroup of the MAPK signaling pathway was involved in such immunoregulatory functions of hyalomin-A and -B. These results showed that immunoregulatory peptides of tick salivary glands suppress host inflammatory response by modulating cytokine secretion and detoxifying reactive oxygen species.

The biological effects of rainbow trout (Oncorhynchus mykiss) recombinant interleukin-8

In this report, recombinant interieukin-8 (rIL-8) was produced and its activity tested for the first time in fish. The rainbow trout rIL-8 was produced in Escherichia coli and purified using a 6xHis tag at the N-terminus. The rIL-8 induced a dose-dependent migration of head kidney leukocytes at concentrations from 0.1 to 10 ng/ml, with a peak response at 1 ng/ml. Trout rIL-8 also had a significant effect on superoxide production by head kidney cells, with maximal, activity at 0.1 and 1 ng/ml. When injected intraperitoneally into trout, rIL-8 had a clear effect on total leukocyte number in the peritoneal cavity, with increasing doses (up to 5 mu g) eliciting more cells. Of three leukocyte types distinguished, neutrophils were the dominant cell type, especially at higher rIL-8 concentrations. In contrast, the proportion of macrophages and lymphocytes decreased with rIL-8 administration, suggesting that they were not attracted at the same rate as neutrophils. (C) 2007 Elsevier Ltd. All rights reserved.

Characterization of an early gene encoding for dUTPase in Rana grylio virus

dUTPase (DUT) is a ubiquitous and important enzyme responsible for regulating levels of dUTP. Here, an iridovirus DUT was identified and characterized from Rana grylio virus (RGV) which is a pathogen agent in pig frog. The DUT encodes a protein of 164aa with a predicted molecular mass of 17.4 kDa, and its transcriptional initiation site was determined by 5'RACE to start from the nucleotide A at 15 nt upstream of the initiation codon ATG. Sequence comparisons and multiple alignments suggested that RGV DUT was quite similar to other identified DUTs that function as homotrimers. Phylogenetic analysis implied that DUT horizontal transfers might have occurred between the vertebrate hosts and iridoviruses. Furthermore, its temporal expression pattern during RGV infection course was characterized by RT-PCR and Western blot analysis. It begins to transcribe and translate as early as 4 h postinfection (p.i.), and remains detectable at 48 h p.i. DUT-EGFP fusion protein was observed in the cytoplasm of pEGFP-N3-Dut transfected EPC cells. Immunofluorescence also confirmed DUT cytoplasm localization in RGV-infected cells. Using drug inhibition analysis by a de novo protein synthesis inhibitor (cycloheximide) and a viral DNA replication inhibitor (cytosine arabinofuranoside), RGV DUT was classified as an early (E) viral gene during the in vitro infection. Moreover, RGV DUT overexpression was shown that there was no effect on RGV replication by viral replication kinetics assay. (c) 2006 Published by Elsevier B.V.

Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD

The growth direction of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) is modulated by pretreatment of (001) SMO3 (STO) substrates. ZnO films show a-oriented smooth surface with epitaxial relationship of < 001 > ZnO//< 110 > STO on as-received SfO, and c-axis columnar growth with < 010 > ZnO//< 110 > STO on etched STO, respectively. The orientation alteration of ZnO films is supposed to be caused by the change of STO surface polarity. In addition, the c-ZnO films exhibit an enhanced photoluminescence (PL) intensity due to the improved crystal quality, while the blueshift of PL peak is attributed to the smaller tensile strain. These results show that high quality c-ZnO, which is essential for electronic and optoelectronic device applications, can be grown on (001) SfO by MOCVD. (C) 2008 Elsevier B.V. All rights reserved.

Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures

Vertically well-aligned ZnO nanoridge, nanorod, nanorod-nanowall junction, and nanotip arrays have been successfully synthesized on Si (100) substrates using a pulsed laser deposition prepared ZnO film as seed layer by thermal evaporation method. Experimental results illustrated that the growth of different morphologies of ZnO nanostructures was strongly dependent upon substrate temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that the ZnO nanostructures were single crystals with a wurtzite structure. Compared with those of the other nanostructures, the photoluminescence (PL) spectrum of nanorod-nanowall junctions showed the largest intensity ratio of ultraviolet (UV) to yellow-green emission and the smallest full-width at half-maximum (FWHM) of the UV peak, reflecting the high optical quality and nearly defect free of crystal structure. The vertical alignment of the nanowire array on the substrate is attributed to the epitaxial growth of the nanostructures from the ZnO buffer layer. The growth mechanism was also discussed in detail. (c) 2006 Elsevier B.V. All rights reserved.

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (NH3) and trimethylaluminum (TMAI). The growth process of AlN is carefully investigated by monitoring the in situ optical reflection. The abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of NH3 are observed and can be well explained by the effect of parasitic reaction. The increase of growth rate with increasing flux of TMAI is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. A relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the MOCVD growth of AlN and probably lead to a more effective incorporation of Al into the AlGaN layers. (c) 2005 Elsevier B.V. All rights reserved.

Enhancement of 1.53 mu m photoluminescence from spin-coated Er-Si-O (Er2SiO5) crystalline films by nitrogen plasma treatment

Er-Si-O (Er2SiO5) crystalline films are fabricated by the spin-coating and subsequent annealing process. The fraction of erbium is estimated to be 21.5 at% based on Rutherford backscattering measurement. X-ray diffraction pattern indicates that the Er-Si-O films are similar to Er2SiO5 compound in the crystal structure. The fine structure of room-temperature photoluminescence of Er3+-related transitions suggests that Er has a local environment similar to the Er-O-6 octahedron. Our preliminary results show that the intensity of 1.53 mu m emission is enhanced by a factor of seven after nitrogen plasma treatment by NH3 gas with subsequent post-annealing. The full-width at half-maximum of 1.53 pm emission peak increases from 7.5 to 12.9 nm compared with that of the untreated one. Nitrogen plasma treatment is assumed to tailor Er3+ local environment, increasing the oscillator strength of transitions and thus the excitation/emission cross-section. (c) 2005 Elsevier B.V. All rights reserved.

Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy

Selective area growth (SAG) of GaN on SiO2 stripe-patterned GaN/GaAs(001) substrates was carried out by metalorganic vapor-phase epitaxy. The SAG samples were investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). SEM observations showed that the morphology of SAG GaN is strongly dependent on the window stripe orientation and slightly affected by the orientation relationship between the window stripes and the gas flow. The (I 1 1)B sidewalls formed on the SAG GaN stripes are found to be stable. XRD measurements indicated the full-widths at half-maximum (FWHMs) of cubic GaN (0 0 2) rocking curves are reduced after SAG. The measured FWHMs with omega-axis parallel to [1(1) over bar 0] are always larger than the FWHM values obtained with omega-axis parallel to [I 10], regardless of the orientation relationship between the w-axis and the GaN stripes. (C) 2003 Elsevier Science B.V. All rights reserved.

(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition

The (Ga,Mn,N) samples were grown by the implantation of low-energy Mn ions into GaN/Al2O3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. Auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the Mn ions reach deeper in samples with higher substrate temperatures. Clear X-ray diffraction peak from (Ga,Mn)N is observed in samples grown at the higher substrate temperature. It indicates that under optimized substrate temperature and annealing conditions the solid solution (Ga,Mn)N phase in samples was formed with the same lattice structure as GaN and different lattice constant. (C) 2003 Elsevier Science B.V. All rights reserved.