Using the moving window incorporated neural network to forecast the population behavior of Nostocales spp. in the River Darling, Australia

The paper demonstrates the nonstationarity of algal population behaviors by analyzing the historical populations of Nostocales spp. in the River Darling, Australia. Freshwater ecosystems are more likely to be nonstationary, instead of stationary. Nonstationarity implies that only the near past behaviors could forecast the near future for the system. However, nonstionarity was not considered seriously in previous research efforts for modeling and predicting algal population behaviors. Therefore the moving window technique was incorporated with radial basis function neural network (RBFNN) approach to deal with nonstationarity when modeling and forecasting the population behaviors of Nostocales spp. in the River Darling. The results showed that the RBFNN model could predict the timing and magnitude of algal blooms of Nostocales spp. with high accuracy. Moreover, a combined model based on individual RBFNN models was implemented, which showed superiority over the individual RBFNN models. Hence, the combined model was recommended for the modeling and forecasting of the phytoplankton populations, especially for the forecasting.

Changes in the benthic macroinvertebrates in Xiangxi Bay following dam closure to form the Three Gorges Reservoir

Benthic macroinvertebrates were assessed monthly in Xiangxi Bay of the Three Gorges Reservoir for two years after the initial closure of the dam. Mean total density of macroinvertebrates varied from 275 ind./m(2) during the first year to 5,094 ind./m(2) during the second year, and the community of 50 taxa was overwhelmingly dominated by oligochaetes and chironomids (44 and 48% of the total taxa, respectively). As sediment accumulated in the substrate of the bay, the species composition changed dramatically, with oligochaetes comprising 91.3-99.3% of the total abundance during the second year. The dominant oligochaetes were Limnodrilus hoffmeisteri and Nais inflata. The chironomids Procladius sp., and Polypedilum scalaenum group sp. were similarly abundant in both years.

Amplified fragment length polymorphism analysis to identify the genetic structure of the Gymnocypris przewalskii (Kessler, 1876) population from the Qinghai Basin, China

Amplified fragment length polymorphism (AFLP) was used to analyse the genetic structure of 45 individuals of Gymnocypris przewalskii (Kessler, 1876), an endangered and state-protected rare fish species, from three areas [the Heima (HM), Buha (BH) and Shaliu rivers (SL), all draining into Qinghai Lake]. A total of 563 polymorphic loci were detected. The HM, BH and SL populations have 435, 433 and 391 loci, respectively (Zhu and Wu, 1975), which account for 77.26%, 76.91% and 69.45% of the total number of polymorphic loci of each population, respectively. The Nei indices of genetic diversities (H) of the three populations were calculated to be 0.2869 (HM), 0.2884 (BH) and 0.2663 (SL), respectively. Their Shannon informative indices are 0.4244, 0.4251 and 0.3915, respectively. Research results show that the mean genetic distance between HM and BH is the smallest (0.0511), between BH and SL is the second shortest (0.0608), and between HM and SL is the largest (0.0713), with the mean genetic distance among the three populations being over 0.05. Data mentioned above indicate that the three populations have a certain genetic differentiation. The total genetic diversity (H-t = 0.3045) and the mean value of genetic diversity within the population (H-s = 0.2786) indicate that the variations have mainly come from within the population.

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.

Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides

The Mg-Ga acceptor energy levels in GaN and random Al8In4Ga20N32 quaternary alloys are calculated using the first-principles band-structure method. We show that due to wave function localization, the MgGa acceptor energy level in the alloy is significantly lower than that of GaN, although the two materials have nearly identical band gaps. Our study demonstrates that forming AlxInyGa1-x-yN quaternary alloys can be a useful approach to lower acceptor ionization energy in the nitrides and thus provides an approach to overcome the p-type doping difficulty in the nitride system.

Application of sampled grating to control the lasing wavelength in complex-coupled DFB laser

This paper reports that the complex-coupled distributed feedback laser with the sampled grating has been designed and fabricated. The +1st order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5387 mu m in the experiment. The typical threshold current of the device is 30 mA, and the optical output power is about 10 mW at the injection current of 100 mA.

A method to estimate the strain state of SiGe/Si by measuring the bandgap

sing the result of model-solid theory, we have obtained the relationship between bandgap and strain of Si1-x Ge-x alloy on Si (100) substrate with x < 0.85. It was shown that the deviation between the bandgap of strained SiGe and relaxed SiGe is proportional to the strain. According to the theoretical result, a novel method was suggested to determine the strain state of SiGe/ Si through measuring the bandgap. The strain in the SiGe/Si multi-quantum wells was measured using the new method and the results had good agreement with that from XRD measurement.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.

Methods to tune the electronic states of self-organized InAs/GaAs quantum dots

After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. Ejected energy of self-organized InAs/GaAs quantum dots has been successfully tuned in a controlled manner by changing the thickness of GaAs capping layer and the time of growth interruption and InAs layer thickness. The photoluminescence (PL) spectra showing the shift of the peak position reveals the tuning of the electronic states of the QD system. Enhanced uniformity of Quantum dots is observed judging from the decrease of full width at half maximum of FL. Injection InAs/GaAs quantum dot lasers have been fabricated and performed on various frequencies. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

tilt menu: using the 3d orientation information of pen devices to extend the selection capability of pen-based user interfaces

We present a new technique called‘Tilt Menu’ for better extending selection capabilities of pen-based interfaces.The Tilt Menu is implemented by using 3D orientation information of pen devices while performing selection tasks.The Tilt Menu has the potential to aid traditional onehanded techniques as it simultaneously generates the secondary input (e.g., a command or parameter selection) while drawing/interacting with a pen tip without having to use the second hand or another device. We conduct two experiments to explore the performance of the Tilt Menu. In the first experiment, we analyze the effect of parameters of the Tilt Menu, such as the menu size and orientation of the item, on its usability. Results of the first experiment suggest some design guidelines for the Tilt Menu. In the second experiment, the Tilt Menu is compared to two types of techniques while performing connect-the-dot tasks using freeform drawing mechanism. Results of the second experiment show that the Tilt Menu perform better in comparison to the Tool Palette, and is as good as the Toolglass.

Use of electrical resistance to detect the formation and decomposition of methane hydrate

The changes of electrical resistance (R) were studied experimentally in the process of CH4 hydrate formation and decomposition, using temperature and pressure as the auxiliary detecting methods simultaneously. The experiment results show that R increases with hydrate formation and decreases with hydrate decompositon. R is more sensitive to hydrate formation and decompositon than temperature or pressure, which indicates that the detection of R will be an effective means for detecting natural gas hydrate (NGH) quantitatively.

An Improved Driving Circuit for Thermo-Optical Switch to Improve the Reliability of Thermo-Optical Switch Matrix

The influence of the heaters on the reliability of the thermo-optic (TO) switch matrix is analyzed and an improved driving circuit based on the analyzed results is designed and fabricated. The circuit can improve the reliability of the switch matrix device from 78.87% to 97.04% for a 4×4 optical switch device with a simplified tree structure. The simulation and experimental results show the circuit can provide suitable driving current for TO switch matrix.