66 resultados para COMBINATION


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Self-assembled InAs quantum dots (QDs) with differing deposition thicknesses covered by InxAl1-xAs (x = 0.2, 0.3) and In0.2Ga0.8As combination strain-reducing layers (CSRLs) were grown by molecular beam epitaxy. Their structural and optical properties were investigated by atomic force microscopy and photoluminescence spectroscopy, respectively. The emission peak position of InAs QDs capped by CSRL can reach 1.34 mum at room temperature with a relatively larger energy splitting of 93 meV between the ground and first excited states.

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Self-assembled InAs/GaAs quantum dots covered by the 1-nm InxAl(1-x)As (x = 0.2,0.3) and 3-nm In0.2Ga0.8As combination strain-reducing layer are fabricated, whose height can take up to 30-46 nm. The luminescence emission at a long-wavelength of 1.33 mum and the energy separation between the ground and the first-excited state of 86 meV are observed at room temperature. Furthermore, comparative study proves that the energy separation can increase to 91 meV by multiple stacking.

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In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states. (C) 2003 Elsevier Science Ltd. All rights reserved.

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We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined InAlAs and InGaAs overgrowth layer on InAs/GaAs QDs. We found that QDs formed on GaAs (100) substrate by InAs deposition followed by the InAlAs and InGaAs combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV. These results are attributed to the fact that InAs/GaAs intermixing caused by In segregation at substrate temperature of 520 degreesC can be considerably suppressed by the thin InAlAs layer and the strain in the quantum dots can be reduced by the combined InAlAs and InGaAs layer. (C) 2002 American Institute of Physics.

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We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources.

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A new process has been suggested for converting natural gas to ethylene by combining oxidative coupling of methane with ethane dehydrogenation to provide an efficient method for the utilization of thermicity and CO2. From their thermodynamics, it is clear that the exothermicity from CH4 oxidative coupling reaction (DeltaH(800degreesC) = -174.3 kJ mol(-1)) can support C2H6 dehydrogenation by CO2 (DeltaH(800degreesC) = + 180.2 kJ mol(-1)). Meanwhile, the two reactions can be conducted under the same reaction conditions, such as the reaction temperature and reaction pressure as well as space velocity. In addition, the CO2 yielded from CH4 oxidative coupling reaction can be directly used for C2H6 dehydrogenation. Two kinds of catalyst are developed for this combined process with an achievement, from which C2H4 content in tail gas can reach attractively 16.4%, which can be used directly to produce ethylbenzene by the alkylation of benzene. (C) 2002 Elsevier Science Ltd. All rights reserved.

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973 Project of China [2006CB701305]; "863" Project of China [2009AA12Z148]; National Natural Science Foundation of China [40971224]

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Effects of multiwalled carbon nanotubes (MWCNTs) and Ni2O3 on the flame retardancy of linear low density polyethylene (LLDPE) have been studied. A combination of MWCNTs and Ni2O3 showed a synergistic effect in improving the flame retardancy of LLDPE compared with LLDPE composites containing MWCNTs or Ni2O3 alone. As a result, the peak value of heat release rate measured by cone calorimeter was obviously decreased in the LLDPE/MWCNTs/Ni2O3 Composites. According to the results from rheological tests, carbonization experiments, and structural characterization of residual char, the improved flame retardancy was partially attributed to the formation of a networklike structure due to the good dispersion of MWCNTs in LLDPE matrix, and partially to the carbonization of degradation products of LLDPE catalyzed by Ni catalyst originated from Ni2O3, More importantly, both viscoelastic characteristics and catalytic carbonization behavior of LLDPE/MWCNTs/Ni2O3 composites acted in concert to result in a synergistic effect in improving the flame retardancy.