Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots

The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally. Such a barrier has been predicted by previous theories. From the deep-level transient spectroscopy (DLTS) measurements, we have obtained the electron and hole energy levels of quantum dots E-e(QD-->GaAs) = 0.13 eV and E-h(QD-->GaAs) = 0.09 eV relative to the bulk unstrained GaAs band edges E-c and E-v. DLTS measurements have also provided evidence to the existence of the capture barriers of quantum dots for electron E-eB = 0.30 eV and hole E-hB = 0.26 eV. The barriers can be explained by the apexes appearing in the interface between InAs and GaAs caused by strain. Combining the photoluminescence results, the band structures of InAs and GaAs have been determined.

Degenerate four-wave-mixing signals from dc- and ac-driven semiconductor superlattice

Within the one-dimensional tight-binding model;rnd chi-3 approximation, we have calculated four-wave-mixing (FWM) signals for a semiconductor superlattice in the presence of both static and high-frequency electric fields. When the exciton effect is negligible, the time-periodic field dynamically delocalizes the otherwise localized Wannier-Stark states, and accordingly quasienergy band structures are formed, and manifest in the FWM spectra as a series of equally separated continua. The width of each continuum is proportional to the joint width of the valence and conduction minibands and is independent of the Wannier-Stark index. The realistic homogeneous broadening blurs the continua into broad peaks, whose line shapes, far from the Lorentzian, vary with the delay time in the FWM spectra. The swinging range of the peaks is just the quasienergy bandwidth. The dynamical delocalization (DDL) also induces significant FWM signals well beyond the excitation energy window. When the Coulomb interaction is taken into account, the unequal spacing between the excitonic Wannier-Stark levels weakens the DDL effect, and the FWM spectrum is transformed into groups of discrete lines. Strikingly, the groups are evenly spaced by the ac field frequency, reflecting the characteristic of the quasienergy states. The homogeneous broadening again smears out the line structures, leading to the excitonic FWM spectra quite similar to those without the exciton effect. However, all these features predicted by the dynamical theory do not appear in a recent experiment [Phys. Rev. Lett. 79, 301 (1997)], in which, by using the static approximation the observed Wannier-Stark ladder with delay-time-dependent spacing in the FWM spectra is attributed to a temporally periodic dipole field, produced by the Bloch oscillation of electrons in real space. The contradiction between the dynamical theory and the experiments is discussed. In addition, our calculation indicates that the dynamical localization coherently enhances the time-integrated FWM signals. The feasibility of using such a technique to study the dynamical localization phenomena is shown. [S0163-1829(99)10607-6].

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025]

TEMPERATURE-DEPENDENCE OF THE LOW-FIELD MOBILITY OF MINIBAND CONDUCTION IN SUPERLATTICES

The existing interpretation of the T-1 temperature dependence of the low-field miniband conduction is derived from certain concepts of conventional band theory for band structures resulting from spatial periodicities commensurable with the dimensionalities of the system. It is pointed out that such concepts do not apply to the case of miniband conduction, where we are dealing with band structures resulting from a one-dimensional periodicity in a three-dimensional system. It is shown that in the case of miniband conduction, the current carriers are distributed continuously over all energies in a sub-band, but only those with energies within the width of the miniband contribute to the current. The T-1 temperature dependence of the low-field mobility is due to the depletion of these current-carrying carriers with the rise of temperature.

Quantum confinement effect in thin quantum wires

The electronic states and optical transition properties of three semiconductor wires Si? GaAs, and ZnSe are studied by the empirical pseudopotential homojunction model. The energy levels, wave functions, optical transition matrix elements, and lifetimes are obtained for wires of square cross section with width from 2 to 5 (root 2a/2), where a is the lattice constant. It is found that these three kinds of wires have different quantum confinement properties. For Si wires, the energy gap is pseudodirect, and the wave function of the electronic ground state consists mainly of four bulk Delta states. The optical transition matrix elements are much smaller than that of a direct transition, and increase with decreasing wire width. Where the width of wire is 7.7 Angstrom, the Si wire changes from an indirect energy gap to a direct energy gap due to mixing of the bulk Gamma(15) state. For GaAs wires. the energy gap is also pseudodirect in the width range considered, but the optical transition matrix elements are larger than those of Si wires by two orders of magnitude for the same width. However, there is no transfer to a direct energy gap as the wire width decreases. For ZnSe wires, the energy gap is always direct, and the optical transition matrix elements are comparable to those of the direct energy gap bulk semiconductors. They decrease with decreasing wire width due to mixing of the bulk Gamma(1) state with other states. All quantum confinement properties are discussed and explained by our theoretical model and the semiconductor energy band structures derived. The calculated lifetimes of the Si wire, and the positions of photoluminescence peaks, are in good agreement with experimental results.

Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

双奇核174Re高自旋能级结构研究

利用能量为125140MeV的27Al束流，通过重离子核反应152Sm(27Al,5n) 研究了双奇核174Re的高自旋态能级结构。实验进行了射线的激发函数、X-和-符合测量。基于实验测量结果，拓展了174Re的能级纲图，纲图中包括五条转动带。本工作拓展了原有的三条转动带，并新发现了两条内禀组态分别为π9/2[514]⊗ν5/2[512]与π1/2[541]⊗ν5/2[512]的转动带。通过对实验数据的分析，建议了各能级的自旋、宇称，并对各转动带的内禀组态进行了指认。在二准粒子-转子模型的基础上，从邻近核各组态能级信息出发，估算了174Re的带头能量。建议π1/2[541]⊗ν5/2[512]为174Re基态的内禀组态。根据纲图中出现的转动带间交叉跃迁，在带混合理论基础上提取与分析了相关组态的相互作用强度与跃迁电四极矩比。用准粒子形状驱动效应解释了不同组态转动带间跃迁电四极矩的显著差别。最后，讨论了174Re中出现的旋称反转现象

High-spin states in Au-188: Further evidence for nonaxial shape

The high-spin level structure of Au-188 has been investigated via the Yb-173(F-19,4n gamma) reaction at beam energies of 86 and 90 MeV. The previously reported level scheme has been modified and extended significantly. A new I-pi = 20(+) state associated with pi h(11/2)(-1) circle times nu i(13/2)(-2)h(9/2)(-1) configuration and two new rotational bands, one of which is built on the pi h(9/2) circle times nu i(13/2) configuration, have been identified. The prolate-to-oblate shape transition through triaxial shape has been proposed to occur around Au-188 for the pi h(9/2) circle times nu i(13/2) bands in odd-odd Au isotopes. Evidence for pi h(11/2)(-1) circle times nu i(13/2)(-1) structure of nonaxial shape with gamma < -70 degrees has been obtained by comparison with total Routhian surface and cranked-shell-model calculations.

双奇核168Ta高自旋能级结构研究

能量为140 MeV的27Al束流轰击145Nd氧化靶，通过145Nd (27Al，4nγ)168Ta熔合蒸发反应对双奇核168Ta的高自旋态进行了实验研究。扩展了基于πh11/2(9/2-[514])νi13/2(5/2+[402])和πd5/2(5/2+[402])νi13/2(5/2+[642])准粒子组态下的转动带能级纲图。根据实验测量结果，对两转动带的准粒子顺排特征作了分析。通过B(M1)/B(E2)的理论与实验值比较以及168Ta相邻双奇核能级间隔系统性，进一步确定了两转动带的准粒子组态和能级的自旋宇称

Vacuum ultraviolet optical properties of (La,Gd)PO4 : RE3+ (RE = Eu, Tb)

Vacuum ultraviolet excitation spectra of phosphors (La,Gd)PO4:RE3+ (RE = Eu or Tb) and X-ray photoelectron spectra of LaPO4 and GdPO4 are investigated. The vacuum ultraviolet excitation intensity of (La,Gd)PO4:RE3+ is enhanced with the increasing of Gd3+ content, which implies that Gd3+ plays an intermediate role in energy transfer from host absorption band to RE3+. When Gd3+ is doped into LaPO4:Eu, charge transfer band (CT band) begins to shift to higher energy region and the overlap degree of CT band and the host absorption band gets greater with more Gd3+ doped into LaPO4. These results suggest that the dopant (Gd3+) gives an important influence on energy transfer efficiency. The top of LaPO4 valance band is formed by the 2p level of O2-, whereas that of GdPO4 valance band is formed by the 2p level of O2- and the 4f level of Gd3+, showing the differences in band structures between LaPO4 and GdPO4.

Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.

Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

We have investigated the optical transitions in Ga1-yInyNxAs1-x/GaAs single and multiple quantum wells using photovoltaic measurements at room temperature. From a theoretical fit to the experimental data, the conduction band offset Q(c), electron effective mass m(e)*, and band gap energy E-g were estimated. It was found that the Q(c) is dependent on the indium concentration, but independent on the nitrogen concentration over the range x=(0-1)%. The m(e)* of GaInNAs is much greater than that of InGaAs with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. Our experimental results for the m(e)* and E-g of GaInNAs are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized N states. (C) 2001 American Institute of Physics.

RESONANT TUNNELING, EIGENVALUE AND ENERGY-BAND CALCULATION FOR POTENTIAL AND PERIODIC POTENTIAL STRUCTURES

Recursion formulae for the reflection and the transmission probability amplitudes and the eigenvalue equation for multistep potential structures are derived. Using the recursion relations, a dispersion equation for periodic potential structures is presented. Some numerical results for the transmission probability of a double barrier structure with scattering centers, the lifetime of the quasi-bound state in a single quantum well with an applied field, and the miniband of a periodic potential structure are presented.

Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.