冲绳海槽北部PC-1岩芯24 cal.kaBP 以来孢粉记录的古环境信息

东海陆架是世界上最宽阔的陆架之一，面积达770 000 km2左右。在末次冰盛期（LGM），东海海平面下降120～130 m左右，绝大部分陆架暴露出海面。而冲绳海槽是第四纪以来一直保持海洋环境的东海深海区。本文以冲绳海槽北部PC-1岩芯为材料，通过分析该孔的孢粉，加上详细的AMS 14C测年，恢复了周边地区24 cal.kaBP以来的古植被，并推测古环境和古气候变化，重点讨论了LGM时期出露大陆架上发育的植被。 PC-1孔（31°27.5′N，128°24.8′E）位于黑潮支流对马暖流东侧，水深590 m，柱长812 cm。孢粉分析按间隔8 cm取样，个别为4~6 cm，共分析了103个孢粉样品。利用9个AMS 14C数据建立年龄标尺，用Calib5.1.0软件进行年龄校正。通过相邻样品深度的线性内插获得每个样品的年龄，采用外延法得到顶部和底部的校正年龄分别为351cal aBP、24 280 cal aBP，孢粉样品的时间分辨率平均为230 a。 根据孢粉百分比和沉积率的变化，可划分出四个带：Ⅰ带（812～715 cm，24.2～21.1 cal. kaBP）、Ⅱ带（715～451 cm，21.1～15.2 cal. kaBP）、Ⅲ带（451～251 cm，15.2～10.8 cal. kaBP）、Ⅳ带（251～0 cm，10.8～0.3 cal. kaBP），分别对应MIS 3末期、末次冰盛期、冰消期和全新世。末次冰盛期草本植物花粉占优势，孢粉沉积率较高，此时草本花粉主要来源于出露的大陆架，其上发育了以蒿属为主的草地植被，气候比较寒冷干燥；冰消期海平面开始回升，松属花粉含量升高，草本植物花粉含量下降；全新世以木本植物花粉占绝对优势，栗属－栲属花粉迅速增加，蕨类孢子含量升高，草本植物花粉含量锐减，孢粉沉积率降低，由于海平面回升，大陆架被淹没，此时孢粉主要来源于日本岛，九州地区生长了以栲属、栎属为主的常绿阔叶与落叶阔叶林，气候温暖湿润。 叶枝杉属花粉在整个岩芯中零星出现。叶枝杉属植物分布于菲律宾吕宋北部至塔斯马尼亚和新西兰气候潮湿的山地林中，该属花粉在岩芯中的出现，可能暗示了黑潮的影响或者是较强的夏季风。 草本植物与松属花粉百分比变化很好的反映了海平面的升降，松属花粉含量较高指示海平面较高。对岩芯中主要类型的花粉百分比进行了频谱分析，显示存在千年尺度的准周期变化，有明显的6.8，3.8，2.2，1.6 ka的周期。 孢粉样品中的炭屑统计表明，末次冰消期炭屑含量最高，可能因为末次冰消期降雨量增加，炭屑可被降水带到沉积地点沉积下来；全新世的炭屑浓度较高，尤其在晚全新世，出现了一个峰值，究其原因可能与气候变化和人类活动有关。

Pharmacokinetics of sifuvirtide, a novel anti-HIV-1 peptide, in monkeys and its inhibitory concentration in vitro

Aim: To study the pharmacokinetics of sifuvirtide, a novel anti-human immunodeficiency virus (HIV) peptide, in monkeys and to compare the inhibitory concentrations of sifuvirtide and enfuvirtide on HIV-1-infected-cell fusion. Methods: Monkeys received 1.2 mg/kg iv or sc of sifuvirtide. An on-line solid-phase extraction procedure combined with liquid chromatography tandem mass spectrometry (SPELC/MS/MS) was established and applied to determine the concentration of sifuvirtide in monkey plasma. A four-I-127 iodinated peptide was used as an internal standard. Fifty percent inhibitory concentration (IC50) of sifuvirtide on cell fusion was determined by co-cultivation assay. Results: The assay was validated with good precision and accuracy. The calibration curve for sifuvirtide in plasma was linear over a range of 4.88-5000 mu g/L, with correlation coefficients above 0.9923. After iv or sc administration, the observed peak concentrations of sifuvirtide were 10626 +/- 2886 mu g/L and 528 +/- 191 mu g/L, and the terminal elimination half-lives (T,12) were 6.3 +/- 0.9 h and 5.5 +/- 1.0 h, respectively. After sc, T-max was 0.25-2 h, and the absolute bioavailability was 49% +/- 13%. Sifuvirtide inhibited the syncytium formation between HIV-1 chronically infected cells and uninfected cells with an IC50 of 0.33 mu g/L. Conclusion: An on-line SPE-LC/MS/MS approach was established for peptide pharmacokinetic studies. Sifuvirtide was rapidly absorbed subcutaneously into the blood circulation. The T-1/2 of sifuvirtide was remarkably longer than that of its analog, enfuvirtide, reported in healthy monkeys and it conferred a long-term plasma concentration level which was higher than its IC50 in vitro.

Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films

(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.

1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects

High-quality Ge film was epitaxially grown on silicon on insulator using the ultrahigh vacuum chemical vapor deposition. In this paper, we demonstrated that the efficient 1 4 germanium-on-silicon p-i-n photodetector arrays with 1.0 mu m Ge film had a responsivity as high as 0.65 A/W at 1.31 mu m and 0.32 A/W at 1.55 mu m, respectively. The dark current density was about 0.75 mA/cm(2) at 0 V and 13.9 mA/cm(2) at 1.0 V reverse bias. The detectors with a diameter of 25 mu m were measured at 1550 nm incident light under 0 V bias, and the result showed that the 3-dB bandwidth is 2.48 GHz. At a reverse bias of 3 V, the bandwidth is about 13.3 GHz. The four devices showed a good consistency.

Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition

The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed that the Mn ions were successfully implanted into GaSb substrate. Clear double-crystal X-ray diffraction patterns of the Ga1-xMnxSb samples indicate that the Ga1-xMnxSb epilayers have the zinc-blende structure without detectable second phase. Magnetic hysteresis-loop of the Ga1-xMnxSb epilayers were obtained at room temperature (293 K) with alternating gradient magnetometry. (c) 2005 Elsevier B.V. All rights reserved.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition

1.35 mum photoluminescence (PL) with a narrow linewidth of only 19.2 meV at room temperature has been achieved in In0.5Ga0.5As islands structure grown on GaAs (1 0 0) substrate by solid-source molecular beam epitaxy. Atomic force microscopy (AFM) measurement reveals that the 16-ML-thick In0.5Ga0.5As islands show quite uniform InGaAs mounds morphology along the [ 1(1) over bar 0] direction with a periodicity of about 90 nm in the [1 1 0] direction. Compared with the In0.5Ga0.5As alloy quantum well (QW) of the same width, the In0.5Ga0.5As islands structure always shows a lower PL peak energy and narrower full-width at half-maximum (FWHM), also a stronger PL intensity at low excitation power and more efficient confinement of the carriers. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2000 Elsevier Science B.V. All rights reserved.

Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)

The hydrogenated amorphous SiOx films (a-SiOx:H) with various oxygen contents have been prepared using plasma enhanced chemical vapor deposition technique. The films were implanted with erbium and annealed by rapid thermal annealing. An intense photoluminescence (PL) of Er at 1.54 mum has been observed at 77 K and at room temperature. The PL intensity depends strongly on both the oxygen content of the film and the rapid thermal annealing temperature and reaches its maximum if the ratio of O/Si in the film is approximately equal to 1.0 at 77 K and to 1.76 at room temperature. The microstructure of the film also has strong influences on the PL intensity. The PL intensity at 250 K is slightly more than a half of that at 15 K. It means that the temperature quenching effect of the PL intensity is very weak.

Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2)

Hydrogenated amorphous SiOx films are fabricated via plasma enhanced chemical vapor deposition technique. After erbium implantation and rapid thermal annealing, photoluminescence (PL) are measured at 77 K and room temperature (RT), respectively. We observed the strong PL at 1.54 mu m at RT. The 1.54 mu m PL intensity changes with the variation of concentration of oxygen. The most intense PL at 77 K in a-SiOx:H (Er) corresponds to O/Si = 1.0 and at RT to O/Si = 1.76. Based on our results, we propose that Er ions contributed to PL come from O-rich region in the film. Er ions in Si-rich region have no relation with FL. Temperature dependence of the intensity of the 1.54 mu m line of the Er3+ transition displays a very weak temperature quenching in Er-doped hydrogenated amorphous Si. The PL intensity at 250 K is a little more one half of that at 15 K.

支持WSRP 2.0规范的联邦门户的设计与实现

门户（Portal）是基于组件的web应用，它可以集成Internet环境下各种现有应用系统、数据资源和网络信息资源，并为用户形成个性化的访问页面，实现信息的集成和发布。Portlet是门户中的可重用组件，能够提供对web内容、应用程序和其他资源的访问。JSR168规范（Portlet 1.0）和JSR286规范（Portlet 2.0）提供了Portlet的标准。 随着门户的广泛使用，门户已经成为获取信息，巩固和整合IT基础设施的平台。于是来自于同一公司的、自主的、分散的多个部门都部署了自己的门户，但这些门户之间却无法进行内容共享，即Portlet在门户之间的集成。于是出现了联邦门户（Federated Portals），它是由多个分散的门户构成的网络，这些门户基于共同的标准协同工作。联邦门户实现了在异构门户之间共享远程内容，这些远程内容来自于名为生产者的门户，被收集、组合和运行在名为消费者的门户中。 联邦门户的基本特征是基于规范实现跨门户的系统联合。因此联邦门户的关键在于对门户间互操作标准的制定。这个标准就是OASIS推出的WSRP（Web Services for Remote Portlets）规范。WSRP规范提供了门户间互操作标准，成为联邦门户的基础技术。它有1.0和2.0两个版本，分别产生于2003年和2008年。 为了提高联邦门户应用的构建效率，增强异构门户互操作性的能力，完善联邦门户的用户友好性，需要为OncePortal提供支持WSRP 2.0规范的联邦门户。 本文从WSRP 2.0规范和联邦门户的需求出发，设计并实现了支持WSRP 2.0规范的联邦门户。首先根据WSRP 2.0规范对远程Portlet的语法模型、交互模型和生命周期模型三个方面进行特征分析；其次总结了联邦门户的核心功能、系统边界，并给出了联邦门户的设计；然后从Portlet URL的生成与改写、Portlet统一协作框架、远程Portlet资源服务、WSRP容器和代理容器以及Portlet缓存共5个方面介绍了联邦门户的关键技术；最后基于以上分析和设计，实现了联邦门户扩展应用，并将其应用在中科院软件所自主研发的门户产品OncePortal中。

1、喜树碱类衍生物抗HIV构效关系与作用机制研究2、HIV/AIDS患者疱疹病毒感染状况及性病患者的HIV感染状况分析

1、喜树碱类衍生物抗HIV构效关系与作用机制研究 喜树碱为传统的抗肿瘤药物。本研究对经过化学结构修饰的喜树碱类衍生物进行抗HIV活性及作用机制的研究，并初步探讨了其抗HIV构效关系。 我们对喜树碱类衍生物A系列化合物A1(喜树碱)、A2(10-羟基喜树碱)及A3(7-羟基喜树碱)进行了抗HIV活性检测。化合物A1和A3有较好的抗HIV-1和抗HIV-2活性，化合物A2没有显示抗HIV活性。表明化合物A1的C-10位上-OH基团修饰可能会降低抗HIV活性，化合物A1的C-7位上-CH2OH基团修饰和C-20位-CH3缺失可能会提高其抗HIV活性。对化合物A3和A1的抗HIV机制研究发现：二者对整合酶有一定的结合活性，对慢性感染H9/HIV-1ⅢB 和Jurkat/HIV-1ⅢB细胞中病毒复制没有抑制活性、不能阻断H9/HIV-1ⅢB与正常细胞间的融合，对重组的HIV-1蛋白酶和逆转录酶没有抑制活性。化合物A1和A3不具有选择性杀伤HIV-1ⅢB慢性感染的H9和Jurkat细胞系的作用。进一步进行化合物A3诱导 H9和H9/HIV-1ⅢB、Jurkat和Jurkat/HIV-1ⅢB的凋亡实验显示，化合物A3诱导感染HIV-1ⅢB和未感染病毒细胞的凋亡没有选择性。据此我们初步认为化合物A3和A1的抗HIV作用可能与抑制整合酶活性有关，该化合物可能还作用于其它靶点。 喜树碱类衍生物B系列中化合物B1为20(S)-O - [-O-( 1'-氧基-2',2',6',6'-四甲基哌啶-4'-丁二酸)]-20-喜树碱酯，化合物B2为20(S)-O - [-N-( 1'-氧基-2',2',6',6'-四甲基-1',2',5',6'-四氢吡啶酰胺)-4'-丙氨酸)]-20-喜树碱酯)。我们对化合物B1和B2进行了抗HIV活性检测。结果显示：化合物B2有较好的抗HIV-1和抗HIV-21、喜树碱类衍生物抗HIV构效关系与作用机制研究 喜树碱为传统的抗肿瘤药物。本研究对经过化学结构修饰的喜树碱类衍生物进行抗HIV活性及作用机制的研究，并初步探讨了其抗HIV构效关系。 我们对喜树碱类衍生物A系列化合物A1(喜树碱)、A2(10-羟基喜树碱)及A3(7-羟基喜树碱)进行了抗HIV活性检测。化合物A1和A3有较好的抗HIV-1和抗HIV-2活性，化合物A2没有显示抗HIV活性。表明化合物A1的C-10位上-OH基团修饰可能会降低抗HIV活性，化合物A1的C-7位上-CH2OH基团修饰和C-20位-CH3缺失可能会提高其抗HIV活性。对化合物A3和A1的抗HIV机制研究发现：二者对整合酶有一定的结合活性，对慢性感染H9/HIV-1ⅢB 和Jurkat/HIV-1ⅢB细胞中病毒复制没有抑制活性、不能阻断H9/HIV-1ⅢB与正常细胞间的融合，对重组的HIV-1蛋白酶和逆转录酶没有抑制活性。化合物A1和A3不具有选择性杀伤HIV-1ⅢB慢性感染的H9和Jurkat细胞系的作用。进一步进行化合物A3诱导 H9和H9/HIV-1ⅢB、Jurkat和Jurkat/HIV-1ⅢB的凋亡实验显示，化合物A3诱导感染HIV-1ⅢB和未感染病毒细胞的凋亡没有选择性。据此我们初步认为化合物A3和A1的抗HIV作用可能与抑制整合酶活性有关，该化合物可能还作用于其它靶点。 喜树碱类衍生物B系列中化合物B1为20(S)-O - [-O-( 1'-氧基-2',2',6',6'-四甲基哌啶-4'-丁二酸)]-20-喜树碱酯，化合物B2为20(S)-O - [-N-( 1'-氧基-2',2',6',6'-四甲基-1',2',5',6'-四氢吡啶酰胺)-4'-丙氨酸)]-20-喜树碱酯)。我们对化合物B1和B2进行了抗HIV活性检测。结果显示：化合物B2有较好的抗HIV-1和抗HIV-2活性，而化合物B1的抗HIV活性差。表明化合物B1的C-4’位-CH2被-NH取代，同时C-3’位-CH3修饰可能会提高其抗HIV活性。对化合物B2的抗HIV机制研究发现，化合物B2对慢性感染H9/HIV-1ⅢB细胞中病毒复制没有抑制活性、不能阻断H9/HIV-1ⅢB与正常细胞间的融合，对HIV-1蛋白酶、重组的HIV-1逆转录酶及整合酶没有抑制活性。化合物B2不具有选择性杀伤HIV-1ⅢB慢性感染的H9细胞系的作用。化合物B2抗HIV的作用机制还需进一步研究。 2、HIV/AIDS患者疱疹病毒感染状况及性病患者的HIV感染状况分析 疱疹病毒是AIDS患者合并感染的常见病原体。引起人类疾病的8种疱疹病毒与HIV感染及AIDS进展、机会性感染、恶性肿瘤密切相关。为了解HIV/AIDS患者人类8型疱疹病毒感染状况，我们检测了30例AIDS患者、40例HIV携带者及70例正常对照的液标本中8型疱疹病毒感染状况。采用ELISA法检测单纯疱疹病毒1型(HSV-1)、单纯疱疹病毒2型(HSV-2)、水痘-带状疱疹病毒(VZV)和巨细胞病毒(CMV)；采用PCR法检测EB病毒(EBV)、疱疹病毒6型(HHV-6)、疱疹病毒7型(HHV-7)及疱疹病毒8型(HHV-8)。结果显示，HIV/AIDS患者中HSV-1、HSV-2、VZV、CMV、HHV-6、HHV-8 阳性率均高于健康体检者，其中AIDS患者VZV感染率与HIV携带者有显著性差异；在AIDS患者中多种疱疹病毒共感染普遍存在，必须重视HIV/AIDS患者合并疱疹病毒感染的防治。 性病可促进HIV的传播，了解性病患者的HIV感染状况及临床特征具有重要的意义。在自愿接受HIV咨询检测的基础上，对临床确诊的412例性病患者进行HIV-1/2抗体检测，并对其临床特征进行分析研究。结果显示412例性病患者的HIV检出率为2.9%。性病患者中检出HIV阳性率依次为：尖锐湿疣(6.2%)、生殖器疱疹(4.2%)、梅毒(3.4%)、淋病(1.5%)及非淋菌性尿道炎(1.0%)。83.3%合并感染HIV的性病患者存在多性伴，商业性行为普遍存在，安全套使用率极低现象。感染HIV的尖锐湿疣及生殖器疱疹患者以频繁复发为突出表现，1例合并感染HIV的梅毒患者半年即进展为神经梅毒。性病患者是HIV感染的重要高危人群，危险性行为是其感染HIV和其它性病的主要原因，应该加强性病患者的HIV检测。对临床上频繁复发的尖锐湿疣及生殖器疱疹患者、快速进展的梅毒患者应高度怀疑合并HIV感染的可能。

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

C离子注入Si中Si_(1-x)C_x合金的形成及其稳定性

利用离子注入和高温退火的方法在Si中生长了C含量为0.6%～1.0%的Si_(1-x)C_x合金，研究了不同注入剂量下Si_(1-x)C_x合金的形成及其在退火过程中的稳定性。如果注入剂量小于引起Si非晶化的剂量，850℃退火后，注入产生的损伤缺陷容易与C原子结合形成缺陷团簇，难于形成Si_(1-x)C_x合金。随着注入C离子剂量的增大，注入产生的损伤增强，容易形成Si_(1-x)C_x合金，但注入的剂量增大到一定程度，Si_(1-x)C_x合金的应变将趋于饱和，即只有部分C原子进入晶格位置形成合金相。Si_(1-x)C_X合金一旦形成，在950℃仍比较稳定，而温度高于1000℃，合金的应力将部分释放。随着合金中C原子浓度的升高，合金的稳定性变差。

垂直入射Si_(0.7)Ge_(0.3)/Si多量子阱光电探测器

报道了正入射Si_(0.7)Ge_(0.3)/Si多量子阱结构光电探测器的制作和实验结果。测试了它的光电流谱和量子效率。探测器的响应波长扩展到了1.3μm以上波段。在1.3μm处量子效率为0.1%。量子效率峰值在0.95μm处达到20%。

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.