130 resultados para Absorption of light


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We demonstrate a photonic crystal hetero-waveguide based on silicon-on-insulator (SOI) slab, consisting of two serially connected width-reduced photonic crystal waveguides with different radii of the air holes adjacent to the waveguide. We show theoretically that the transmission window of the structure corresponds to the transmission range common to both waveguides and it is in inverse proportion to the discrepancy between the two waveguides. Also the group velocity of guided mode can be changed from low to high or high to low, depending on which port of the structure the signal is input from just in the same device, and the variation is proportional to the discrepancy between the two waveguides. Using this novel structure, we realize flexible control of transmission window and group velocity of guided mode simultaneously.

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This paper presents a new concept of frequency coherence in the frequency-time domain to describe the field correlations between two lightwaves with different frequencies. The coherence properties of the modulated beams from lightwave sources with different spectral widths and the modes of Fabry-Wrot (FP) laser are investigated. It is shown that the lightwave and its corresponding sidebands produced by the optical intensity modulation are perfectly coherent. The measured linewidth of the beat signal is narrow and almost identical no matter how wide the spectral width of the beam is. The frequency spacing of the adjacent FP modes is beyond the operation frequency range of the measurement instruments. In our experiment, optical heterodyne technique is used to investigate the frequency coherence of the modes of FP laser by means of the frequency shift induced by the optical intensity modulation. Experiments show that the FP modes are partially coherent and the mode spacing is relatively fixed even when the wavelength changes with ambient temperature, bias current and other factors. Therefore, it is possible to generate stable and narrow-linewidth signals at frequencies corresponding to several mode intervals of the laser.

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The Pade approximation with Baker's algorithm is compared with the least-squares Prony method and the generalized pencil-of-functions (GPOF) method for calculating mode frequencies and mode Q factors for coupled optical microdisks by FDTD technique. Comparisons of intensity spectra and the corresponding mode frequencies and Q factors show that the Pade approximation can yield more stable results than the Prony and the GPOF methods, especially the intensity spectrum. The results of the Prony method and the GPOF method are greatly influenced by the selected number of resonant modes, which need to be optimized during the data processing, in addition to the length of the time response signal. Furthermore, the Pade approximation is applied to calculate light delay for embedded microring resonators from complex transmission spectra obtained by the Pade approximation from a FDTD output. The Prony and the GPOF methods cannot be applied to calculate the transmission spectra, because the transmission signal obtained by the FDTD simulation cannot be expressed as a sum of damped complex exponentials. (C) 2009 Optical Society of America

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Surface plasmons(SPs) generated in nano metallic gratings on medium layer can greatly enhance the transmission field through the metallic gratings. The enhancement effect is achieved from lambda = 500 nm to near-infrared domain. The enhancement rate is about 110 % at the wavelength of about 6 10 nm and about 180 % at lambda = 700 nm and 740 nm where most kinds of thin film solar cells have a high spectral response. These structures should provide a promising way to increase the coupling efficiency of thin film solar cells and optical detectors of different wavelength response.

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AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University, has been used to module the light J-V characteristics of a-Si solar cells with a structure of TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/ metal. The effects of valence band offset and contact barriers at p/i and TOC/p, n/metal interfaces on the light J-V characteristics have been examined. The modeling has qualitatively categorized and explained the non-ideal J-V behaviors (rollover, crossover, Voc shift,and rollunder) observed in a-Si based solar cells.

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We have investigated the intersubband absorption for spatially ordered and non-ordered quantum dots (QDs). It is found that the intersubband absorption of spatially ordered QDs is much stronger than that of non-ordered QDs. The enhanced absorption is attributed to the improved size uniformity concurrent with the spatial ordering for the growth condition employed. For the FTIR measurement under normal incidence geometry, using a undoped sample as reference can remove the interference effect due to multiple reflections. (c) 2006 Elsevier B.V. All rights reserved.

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The plasmon resonance absorption of the Ag/SiO2 nanocomposite film is investigated. The measured absorption spectra are compared with those calculated by the Mie theory. The results indicate that the Mie theory on the basis of classical electrodynamics can only partially explain the optical absorption spectra of the Ag/SiO2 nanocomposite film. We believe that the plasmon resonance absorption is mainly an intrinsic quality of the metal particle, and can be explained only with the electronic structure of the metal particle. In the latter, surface resonance state is introduced to systematically discuss the optical absorption spectra of the Ag/SiO2 nanocomposite film. (C) 2003 Elsevier Science B.V. All rights reserved.

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Nanocomposite films consisting of nanosized Ag particles embedded in partially oxidized amorphous Si-containing matrices were prepared by radio frequency magnetron co-sputtering deposition. We studied the influence of ambient atmosphere during the preparation and heat-treatment of Ag/SiOx (0 less than or equal to x less than or equal to 2) nanocompositefilm on its optical absorption properties. We found that the plasmon resonance absorption peak shifts to shorter wavelengths with the increasing oxygen content in the SiOx matrix. The analysis indicates that the potential barrier between Ag nanoparticles and SiOx matrix increases with the increasing x value, which will induce the surface resonance state to shift to higher energy. The electrons in the vicinity of the Fermi level of Ag nanoparticles must absorb more energy to be transferred to the surface resonance state with the increasing x value. It was also found that the plasmon resonance absorption peaks of the samples annealed in different ambient atmospheres are located at about the same position. This is because the oxidation surface layer is dense enough to prevent the oxygen from penetrating into the sample to oxidize the silicon in the inner layer.

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We have investigated the interband electron transitions in a GaNAs/GaAs single quantum well (QW) by photoluminescence and absorption spectra. The experimental results show that the dominant photoluminescence at low temperature and high excitation intensity originates from transitions within the GaNAs layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)03220-4].

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Nanocrystalline silicon embedded SiO2 matrix is formed by annealing the SiO2 films fabricated by plasma enhanced chemical vapor deposition technique. In conjunction with the micro-Ramam spectra, the absorption spectra of the films have been investigated. The blue-shift of absorption edge with decreasing size of silicon crystallites is due to quantum confinement effect. It is found that nanocrystalline silicon is of an indirect band structure, and that the absorption presents an exponential dependance absorption coefficient on photon energy ii! the range of 2.0-3.0 eV, and a sub-band appears in the the range of 1.0-1.5 eV. We believe that the exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the Sub-band absorption is ascribed to transitions between the amorphous silicon states existing in the films.

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A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

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The time delay for light transmission in a coupled microring waveguide structure is calculated from the phase shift of the transmission coefficient obtained by Pade approximation with Baker's algorithm from FDTD Output. The results show that the Pade approximation is a powerful tool for saving time in FDTD simulation.