Sedimentary records of water environment in lake Chaohu in the Yangtze delta region, China

Three lacustrine core samples were collected from Chaohu lake in December 2002 in the Yangtze delta region. The grain sizes were analyzed using a Laser Analyzer to obtain grain-size parameters. Sediment geochronology was determined in radioisotopes Cs-137 and the average sedimentary rates are 0.29cm.a(-1), 0.35 cm.a(-1) and 0.24cm-a(-1) in Cores C 1, C2 and C3, respectively. The grain-size parameters of the deposits vary regularly with the fluctuation of hydrodynamics. From 1950s to the beginning of 20th century, coarse-grained sediment was deposited, suggesting strong hydraulic conditions and high water-level periods with much precipitation; from the start of 20(th) century to latter half of 18(th) century, fine-grained sediment was deposited, indicating that weak hydraulic conditions and low water-level periods with less precipitation; before the first half of 18(th) century, coarse-grained sediment was deposited, suggesting great velocity of flow and high water-level periods of more precipitation.

High-performance evanescently-coupled uni-traveling-carrier photodiodes

A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.

Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators

In this paper, we propose the dynamic P-V curve for modulator and P-I curve for laser diode, and present a simple approach to deriving the curves from the small-signal frequency responses measured using a microwave network analyzer. The linear response range, modulation efficiency, optimal driving conditions at different frequency can, therefore, be determined. It is demonstrated that the large-signal performance of electro-absorption (EA) modulator and the directly modulated semiconductor lasers can be predicted from the dynamic curved surface. Experiments show a good agreement between the evaluated characteristics and the measured large-signal performance.

Surface characterization study on SnO2 powder modified by thiourea

The SnO2 material prepared by sol-gel method was modified by thiourea solution in different concentrations (0.05, 0.1 and 0.2 mol dm(-3)). Then the structure and the average grain size of the SnO2 material were investigated by X-ray power diffraction. In order to understand the nature of the species on the SnO2 surfaces, the thermal gravimetric and differential thermal analyzer (TG-DTA) and IR spectra of these modified and unmodified sample were taken. The result indicates that the stability of oxygen adsorbed on thiourea-modified surface was improved and the amount of surface hydroxyl groups adsorbed on this grain surface was decreased. The thiourea adsorbed on SnO2 grain surface is translated to SO42- after sintered at 600 degrees C. SO42- species stabilize the resistance of the SnO2 sensor. (c) 2005 Elsevier B.V. All rights reserved.

Extraction of intrinsic response from S-parameters of laser diodes

We describe a new method for extracting the intrinsic response of a laser diode from S-parameters measured using a calibrated vector network analyzer. The experimental results obtained using the new method are compared with those obtained using the optical modulation method and the frequency response subtraction method. Good agreement has been obtained, confirming the new method validity and accuracy. The new method has the advantages of obtaining the intrinsic characteristics of a laser diode with conventional measurements using a network analyzer.

Measurement of a reciprocal four-port transmission line structure using the 16-term error model

A new method to measure reciprocal four-port structures, using a 16-term error model, is presented. The measurement is based on 5 two-port calibration standards connected to two of the ports, while the network analyzer is connected to the two remaining ports. Least-squares-fit data reduction techniques are used to lower error sensitivity. The effect of connectors is deembedded using closed-form equations. (C) 2007 Wiley Periodicals, Inc.

Small-signal power measuring technique for measuring the frequency response of electroabsorption modulators

We propose and demonstrate measurement of the frequency response of an electroabsorption (EA) modulator using an extended small-signal power measuring technique. In this technique, the modulator is driven by a microwave carrier amplitude modulated by a low-frequency signal, and the modulator frequency response is obtained without the need of a high-speed photodetector. Based upon the nonlinear characteristics of the EA modulator and the underlying principle of the present method, equations have been derived. A measurement scheme using a network analyzer and a low-speed photodetector has been proposed and constructed, and the experimental results confirm that our proposed method is as accurate as the swept-frequency measurement using a network analyzer directly.

Estimation of frequency response of directly modulated lasers from optical spectra

A simple method for estimating the frequency responses of directly modulated lasers from optical spectra is presented. The frequency-modulation index and intensity-modulation index of a distributed feedback laser can be obtained through the optical spectrum analyses. The main advantage is that the measurement setup is very simple. Only a microwave source and an optical spectrum analyser are needed and there is no need to use a calibrated broadband photodetector. Experiment shows that the proposed method is as accurate as the swept frequency method using a network analyzer and is applicable to a wide range of modulation powers.

A 16-term error model based on linear equations of voltage and current variables

Formulation of a 16-term error model, based on the four-port ABCD-matrix and voltage and current variables, is outlined. Matrices A, B, C, and D are each 2 x 2 submatrices of the complete 4 x 4 error matrix. The corresponding equations are linear in terms of the error parameters, which simplifies the calibration process. The parallelism with the network analyzer calibration procedures and the requirement of five two-port calibration measurements are stressed. Principles for robust choice of equations are presented. While the formulation is suitable for any network analyzer measurement, it is expected to be a useful alternative for the nonlinear y-parameter approach used in intrinsic semiconductor electrical and noise parameter measurements and parasitics' deembedding.

Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval

A technique based on the integrations of the product of amplified spontaneous emission spectrum and a phase function over one mode interval is proposed for measuring gain spectrum for Fabry-Perot semiconductor lasers, and a gain correction factor related to the response function of the optical spectrum analyzer (OSA) is obtained for improving the accuracy of measured gain spectrum. The gain spectra with a difference less than 1.3 cm(-1) from 1500 to 1600 nm are obtained for a 250-mum-long semiconductor laser at the OSA resolution of 0.06, 0.1, 0.2, and 0.5 nm. The corresponding gain correction factor is about 9 cm(-1) at the resolution of 0.5 nm. The gain spectrum measured at the resolution of 0.5 nm has the same accuracy as that obtained by the Hakki-Paoli method at the resolution of 0.06 nm for the laser with the mode interval of 1.3 nm.

Frequency limitation in the calibration of microwave test fixtures

The problem of frequency limitation arising from the calibration of asymmetric and symmetric test fixtures has been investigated. For asymmetric test fixtures, a new algorithm based on the thru-short-match (TSM) method is outlined. It is found that the conventional TSM method does not have any inherent frequency limitation, but using the same procedure with an unknown match may lead to the said problem. This limitation can be avoided by using a different algorithm. The various calibration methods for symmetric test fixtures using known standards are also discussed and the origin of the frequency limitation is identified. Several ways in avoiding the problem are proposed. There is good agreement between the theories and experimental data.

Measurement of gain spectrum for Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process

To improve the accuracy of measured gain spectra, which is usually limited by the resolution of the optical spectrum analyzer (OSA), a deconvolution process based on the measured spectrum of a narrow linewidth semiconductor laser is applied in the Fourier transform method. The numerical simulation shows that practical gain spectra can be resumed by the Fourier transform method with the deconvolution process. Taking the OSA resolution to be 0.06, 0.1, and 0.2 nm, the gain-reflectivity product spectra with the difference of about 2% are obtained for a 1550-nm semiconductor laser with the cavity length of 720 pm. The spectra obtained by the Fourier transform method without the deconvolution process and the Hakki-Paoli method are presented and compared. The simulation also shows that the Fourier transform method has less sensitivity to noise than the Hakki-Paoli method.

Two-port calibration of test fixtures with different test ports

The open-short-load (OSL) method is very simple and widely used for one-port test fixture calibration. In this paper, this method is extended, for the first time, to the two-port calibration of test fixtures with different test ports. The problem of phase uncertainty arising in this application has been solved. The comparison between our results and those obtained with the SOLT method shows that the method established is accurate for practical applications. (C) 2002 Wiley Periodicals, Inc.

Scattering-parameter measurements of laser diodes

An accurate and simple technique for measuring the input reflection coefficient and the frequency response of semiconductor laser diode chips is proposed and demonstrated. All the packaging parasitics could be obtained accurately using a calibrated probe, and the impedance of the intrinsic diode chip is deduced from the directly measured reflection coefficient. The directly measured impedance of a laser diode is affected strongly by the short bond wire. In the frequency response (S(2)1) measurements of semiconductor laser diode chips, the test fixture consists of a microwave probe, a submount, and a bond wire. The S-parameters of the probe could be determined using the short-open-match (SOM) method. Both the attenuation and the reflection of the test fixture have a strong influence on the directly measured frequency response, and in our proposed technique, the effect of test fixture is completely removed.

New algorithms of the TSM and TOM methods for calibrating microwave test fixtures

Based on the conventional through-short-match (TSM) method, an improved TSM method has been proposed in this Letter. This method gives an analytical solution and has almost all the advantages of conventional TSM methods. For example, it has no phase uncertainty and no bandwidth limitation. The experimental results show that the accuracy can be significantly improved with this method. The proposed theory can be applied to the through-open-match (TOM) method. (C) 2002 Wiley Periodicals. Inc.