柠檬酸对酸沉降下高岭石的溶解作用

采用间歇法(batch method)模拟研究酸沉降下的高岭石在柠檬酸溶液中的长期溶解效应。研究表明:柠檬酸能显著促进高岭石Al和Si的释放,且Al、Si的释放能力随柠檬酸浓度的增加而增强;高岭石溶解同步性与柠檬酸浓度有关,随着柠檬酸浓度的提高,其溶解的同步性增强,且反应前期高岭石都表现为Al的优先释放,而在反应后期Al、Si趋于同步释放。柠檬酸对高岭石的溶解速率一般较无机酸高1个数量级左右,且其溶解速率表现出对柠檬酸浓度的饱和性。

全雌鲤的培育及其养殖效果

用生理雄性的散鳞镜鲤作父本,兴国红鲤8305作母本杂交,产生出全雌型杂交鲤,经过多种形式的生产性试验,当年夏花长至11月份,平均体重可达850克。当年养成商品鱼,空壳重可达92％以上。此项研究成果在世界同类研究中处于先进水平,在推广应用上居世界领先地位,为国内首创。

武汉东湖湖区降水中的氮含量及其变化的研究

<正> 东湖位于长江中游的湖北省武汉市市区,其北面为重工业区。在水位高程为20.5m时,湖的面积为27.899km~2(合41,850亩)。总汇水面积为187km~2。根据东湖蒸发实验站提供的资料,1962—1980年的平均年降水量为1182mm,主要集中在4—9月。年平均气温约为16.9℃。降水不仅影响东湖水位的变化,降水中所含的化学组成,特别是氮化合物对于东湖湖水的化学组成、水体生物生产力以及水生态系统中氮的平衡都有一定的影响。为了研究

Simultaneous determination of microcystin contaminations in various vertebrates (fish, turtle, duck and water bird) from a large eutrophic Chinese lake, Lake Taihu, with toxic Microcystis blooms

This is the first to conduct Simultaneous determination of microcystin (MC) contaminations in multi-groups of vertebrates (fish, turtle, duck and water bird) from Lake Taihu with Microcystis blooms. MCs (-RR, -YR, -LR) in Microcystis scum was 328 mu g g(-1) DW. MCs reached 235 mu g g(-1) DW in intestinal contents of phytoplanktivorous silver carp, but never exceeded 0.1 mu g g(-1) DW in intestinal contents of other animals. The highest MC content in liver of fish was in Carassius auratus (150 ng g(-1) DW), followed by silver carp and Culter ilishaeformis, whereas the lowest was in common carp (3 ng g(-1) DW). In livers of turtle, duck and water bird, MC content ranged from 18 to 30 ng g(-1) DW. High MC level was found in the gonad, egg yolk and egg white of Nycticorax nycticorax and Anas platyrhynchos, suggesting the potential effect of MCs on water bird and duck embryos. High MC contents were identified for the first time in the spleens of N. nycticorax and A. platyrhynchos (6.850 and 9.462 ng g(-1) DW, respectively), indicating a different organotropism of MCs in birds. Lakes with deaths of turtles or water birds in the literatures had a considerably higher MC content in both cyanobacteria and wildlife than Lake Taihu, indicating that toxicity of cyanobacteria may determine accumulation level of MCs and consequently fates of aquatic wildlife. (C) 2009 Elsevier B.V. All rights reserved.

Seasonal dynamics and distribution of the digenean Phyllodistomum pawlovskii (Trematoda : Gorgoderidae) in the bullhead catfish, Pseudobagrus fulvidraco, in a lake of China

Seasonal population dynamics of the digenean Phyllodistomum pawlovskii in the urinary bladder of the bullhead catfish, Pseudobagrus fulvidraco, were investigated in Liangzi Lake in the flood plain of the Yangtze River in China from February 2001 to July 2002. The overall prevalence of the parasite was high, 41.5% (n = 1,476), while the mean abundance was relatively low, 1.24 +/- 2.11. The parasite exhibited evident seasonality in changes of prevalence and abundance. In brief, prevalence and abundance were very low in midwinter (January), but increased and remained relatively high in other seasons and months. The distribution pattern of this parasite in the fish was overdispersed, with a variance to mean ratio > 1, but its frequency distribution could not be described by the negative binomial model. There were positive correlations between the number of the parasites per fish and the age and length of the fish; a peaked age-parasite abundance curve was not detected in the parasite-host association. It is suggested that the parasite P. pawlovskii has little effect on the population structure of the bullhead catfish.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Structural characterization of mn implanted AlInN

AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 degrees C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 degrees C and 850 degrees C, respectively. Strong decomposition of the samples took place when annealed at 850 degrees C.

Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer

Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600 850 C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750 C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400 nm.

Rapid thermal annealing effects on structural and optical properties of self-assembled InAs/GaAs quantum dots capped by InAlAs/InGaAs layers

Effects of rapid thermal annealing on the optical and structural properties of self-assembled InAs/GaAs quantum dots capped by the InAlAs/InGaAs combination layers are studied by photoluminescence and transmission electron microscopy. The photoluminescence measurement shows that the photoluminescence peak of the sample after 850 degrees C rapid thermal annealing is blue shifted with 370meV and the excitation peak intensity increases by a factor of about 2.7 after the rapid thermal annealing, which indicates that the InAs quantum dots have experienced an abnormal transformation during the annealing. The transmission electron microscopy shows that the quantum dots disappear and a new InAlGaAs single quantum well structure forms after the rapid thermal annealing treatment. The transformation mechanism is discussed. These abnormal optical properties are attributed to the structural transformation of these quantum dots into a single quantum well.

Surface plasmon modulated nano-aperture vertical-cavity surface-emitting laser

Surface plasmon modulated nano-aperture vertical-cavity surface-emitting lasers were fabricated from common 850 nm VCSELs. When the diameter of the aperture was 200 nm, and the period of grating was 400 nm, the maximum far-field output power reached 0.3mW at a driving current of 15 mA. The fabrication process was described and the beaming properties were studied via experimentally and theoretically.

Photonic crystal vertical-cavity surface-emitting laser based on GaAs material

A photonic crystal vertical-cavity-surface-emitting laser ( PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 mu m with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.

Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m

The authors report the effects of rapid thermal annealing (RTA) on the emission properties of highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 mu m grown on GaAs substrate by metal organic chemical vapor deposition. Postgrowth RTA experiments were performed under N-2 flow at temperatures ranging from 600 to 900 degrees C for 30 s using GaAs proximity capping. Surprisingly, in spite of the capping, large blueshifts in the emission peak (up to about 380 meV at 850 degrees C) were observed (even at low annealing temperatures) along with enhanced integrated photoluminescence (PL) intensities. Moreover, pronounced peak broadenings occurred at low annealing temperatures (< 700 degrees C), indicating that RTA does not always cause peak narrowing, as is typically observed with traditional QDs with large inhomogeneous PL linewidths. The mechanism behind the large peak blueshift was studied and found to be attributed to the as-grown QDs with large size, which cause a larger dot-barrier interface and greater strain in and near the QD regions, thereby greatly promoting Ga-In intermixing across the interface during RTA. The results reported here demonstrate that it is possible to significantly shift the emission peak of the QDs by RTA without any additional procedures, even at lower annealing temperatures. (c) 2007 American Institute of Physics.

Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.

Surface plasmon modulated nano-aperture vertical-cavity surface-emitting laser

We have fabricated surface plasmon modulated nano-aperture vertical-cavity surface-emitting lasers (VCSELs) from common 850 nm VCSELs using focus ion beam etching with Ga+ ion source. The far-field output power is about 0.3 mW at a driving current of 15 mA with a sub-wavelength aperture surrounded by concentric periodic grooves. The enhancement of transmission intensity can be explained by diffraction and enhanced fields associated with surface plasmon. This structure also exhibits beaming properties.