Photonic crystal vertical-cavity surface-emitting laser based on GaAs material
| Data(s) |
2007
|
|---|---|
| Resumo |
A photonic crystal vertical-cavity-surface-emitting laser ( PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 mu m with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Xu, XS (Xu XingSheng); Wang, CX (Wang ChunXia); Song, QA (Song Qian); Du, W (Du Wei); Hu, H (Hu HaiYang); Zhao, ZM (Zhao ZhiMin); Lu, L (Lu Lin); Kan, Q (Kan Qiang); Chen, H (Chen HongDa) .Photonic crystal vertical-cavity surface-emitting laser based on GaAs material ,CHINESE SCIENCE BULLETIN,SEP 2007,52 (18):2473-2476 |
| Palavras-Chave | #光电子学 #photonic crystal |
| Tipo |
期刊论文 |
