Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets

Transport phenomena in radial flow metalorganic chemical vapor deposition (MOCVD) reactor with three concentric vertical inlets are studied by two-dimensional numerical modeling. By varying the parameters such as gas pressure, flow rates combination of multi-inlets, geometric shapes and sizes of reactor and flow distributor, temperatures of susceptor and ceiling, and susceptor rotation, the corresponding velocity, temperature, and concentration fields inside the reactor are obtained; the onset and change of flow recirculation cells under influences of those parameters are determined. It is found that recirculation cells, originated from flow separation near the bend of reactor inlets, are affected mainly by the reactor height and shape, the operating pressure, the flow rates combination of multi-inlets, and the mean temperature between susceptor and ceiling. By increasing the flow rate of mid-inlet and the mean temperature, decreasing the pressure, maintaining the reactor height below certain criteria, and trimming the bends of reactor wall and flow distributor to streamlined shape, the recirculation cells can be minimized so that smooth and rectilinear flow prevails in the susceptor region, which corresponds to smooth and rectilinear isotherms and larger reactant concentration near the susceptor. For the optimized reactor shape, the reactor size can be enlarged to diameter D = 40 cm and height H = 2 cm without flow recirculation. The susceptor rotation over a few hundred rpm around the reactor central axis will induce the recirculation cell near the exit and deflect the streamlines near the susceptor, which is not the case for vertical reactors. (c) 2006 Elsevier B.V. All rights reserved.

1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

Self-assembly Ge quantum dots (QD) on Si and Si/Ge mutli-quantum-wells (MQW) are grown by MBE. The island size and island density was investigated by atomics force microscopy. Ten-layer and twenty-layer MQW were selected for photodiode device fabrication. In photoluminescence (PL), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer MQW which had less defects than the 20-layer sample. Resonant cavity enhanced (RCE) photodiodes were fabricated by bonding on a SOI wafer. Selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation

Compared with the ordinary adaptive filter, the variable-length adaptive filter is more efficient (including smaller., lower power consumption and higher computational complexity output SNR) because of its tap-length learning algorithm, which is able to dynamically adapt its tap-length to the optimal tap-length that best balances the complexity and the performance of the adaptive filter. Among existing tap-length algorithms, the LMS-style Variable Tap-Length Algorithm (also called Fractional Tap-Length Algorithm or FT Algorithm) proposed by Y.Gong has the best performance because it has the fastest convergence rates and best stability. However, in some cases its performance deteriorates dramatically. To solve this problem, we first analyze the FT algorithm and point out some of its defects. Second, we propose a new FT algorithm called 'VSLMS' (Variable Step-size LMS) Style Tap-Length Learning Algorithm, which not only uses the concept of FT but also introduces a new concept of adaptive convergence slope. With this improvement the new FT algorithm has even faster convergence rates and better stability. Finally, we offer computer simulations to verify this improvement.

1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

Self-assembly Ge quantum dots (QD) on Si and Si/Ge mutli-quantum-wells (MQW) are grown by MBE. The island size and island density was investigated by atomics force microscopy. Ten-layer and twenty-layer MQW were selected for photodiode device fabrication. In photoluminescence (PL), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer MQW which had less defects than the 20-layer sample. Resonant cavity enhanced (RCE) photodiodes were fabricated by bonding on a SOI wafer. Selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 Elsevier B.V. All rights reserved.

旱地地膜和秸秆双元覆盖栽培下小麦产量与水分效应

通过覆盖措施提高水分利用率对旱地农业生产具有重要意义。该文采用田间对比试验,研究了旱地冬小麦几种覆盖栽培下产量、水分利用率、土壤水分剖面和硝态氮的分布的差异。结果表明,地膜和秸秆双元覆盖模式下小麦籽粒产量比对照增产12.11%～17.65%,水分利用效率(WUE)比常规栽培提高7.2%～30.8%,土壤0～20 cm土层的含水量提高到12%～16%,硝态氮含量提高到4.70～10.17 mg/kg。地膜和秸秆双元覆盖模式能够显著的提高作物产量和水分利用率,并显著增加耕层土壤中水分含量和硝态氮含量,减轻了土壤剖面硝态氮的淋溶累积。

钼体系催化合成1,2－聚丁二烯的研究

本工作通过较系统地研究Ziegler-Natta型钼催化体系对丁二烯聚合的催化作用，发现一类活性很高的钼催化剂。此类催化剂以无毒，资源丰富的加氢汽油为溶剂，活性已接近工业化的Ni、Co、Ti等体系。同时，本工作又找到了大幅度调节聚合物分子量和链结构的方法，发现了具有活性聚合特点的钼催化体系，初步考察了钼体系催化丁二烯聚合的动力学行为；并利用红外光谱，~(13)C-NRM、X-射线衍射和热分析等方法研究了所得聚合物的链结构和聚集态结构，对聚合物的基本性能也进行了初步考察，发现所得聚合物的一些基本性能超过天然橡胶。此类高活性钼催化剂由MoCl_4OR和(i-Bu)_2AlOAr组成，R为C_(8-18)烷基，Ar为芳基。本催化体系在70 ℃下催化丁二烯聚合时，催化剂用量为Mo/J摩尔比等于4 * 10~(-5)时，转化率可达78％。本体系聚合物分子量可用烯丙基卤等调节，其中烯丙基碘的效果最好。在Mo/J = 8 * 10~(-5)时，烯丙基碘/Mo摩尔比为0.1时即可使聚合物分子量下降约50万；烯丙基碘/Mo摩尔比为10时，聚合物重均分子量即小于20万（不加烯丙基碘为270万）。本体系聚合物分子量分布很窄，聚合温度为30 - 70 ℃时，_W/_n为1.5-2.0；_W/_n与聚合温度呈直线关系，利用外推法估计和动力学考察，本体系在－18 ℃左右有可能引发活性聚合。本体系聚丁二烯含有85％以上1,2－链节，其1，2-链节含量也可以用某些极性添加剂来调节。利用烯丙基碘做调节剂，可制得1,2－链节含量高达98％的聚丁二烯。烯丙基碘还可以调节聚合物链节的立体构型和序列分布；随着烯丙基碘用量的增加，间同1,2－链节增多，全同和无规1,2－链节减少，序列分布的有规性增加，链结构趋于规整。根据动力学初步研究结果，本体系催化丁二烯聚合的速度对单体浓度呈一级关系，表现活化能为17.07千卡／摩卡，催化剂利用率为4％，链增长速度常数为: k_(p30℃) = 40 (升／摩尔·分，下同), k_(p40℃) = 97, k_(p50℃) = 267, k_(p60℃) = 508, k_(p70℃) = 12077。本体系聚合物在烯丙基碘/Mo摩尔比小于2时，无论静态或拉伸下均为无定型；烯丙基碘/Mo摩尔比大于2而小于8时，静态下为无定型，而拉伸时产生结晶，与天然橡胶类似；烯丙基碘／Mo摩尔比大于8时，静态下亦有一定程度的结果。

环形聚苯乙烯稀溶液性质的研究

本工作对环形聚苯乙烯的溶液性质作了系统研究。工作中运用了各种溶液性质的研究方法如激光光散射、凝胶色谱和溶液粘度。对不同分子量(1 * 10~4 ～ 2.3 * 10~5)的窄分布环形聚苯乙烯样品在良溶剂甲苯，不良溶剂丁酮以及不同温度的环已烷中第二维利系数的测定发现，在良溶剂中环形聚苯乙烯的第二维利系数小于线形聚苯乙烯，在不良溶剂中两者第二维利系数相近，而环形聚苯乙烯在环已烷中的θ温度为30 ℃，比线形聚苯乙烯的θ温度低4.5 ℃。这些结果表明环形聚苯乙烯分子间排斥体积效应小于线形分子，而分子内排斥体积效应略大于线形分子。环形聚苯乙烯在甲苯(25 ℃)和丁酮(25 ℃)中的第二维利系数与分子量的关系分别为甲苯 A_(2r) = 1.28 * 10~(-2) (M-bar)_w~(-0.283)丁酮 A_Z(2r) = 5.06 * 10~(-3) (M-bar)_w~(-0.273)通过测定环形聚苯乙烯系列样品在θ溶剂，良溶剂和不良溶剂中的特性粘数，确定了环形聚苯乙烯在多种溶剂中的Mark-Houwink方程，在θ溶剂中的Mark-Houwink方程为[η]_r = 5.102 * 10~(-2) (M-bar)_w~(0.508) 环已烷30 ℃应用粘度结果讨论了环形聚苯乙烯的粘度扩展因子、等效球半径，均方回转半径以及穿流效应，并与线形聚苯乙烯作了比较。

p型GaN的掺杂研究

采用正交实验设计方法设计p型GaN的生长,通过较少的实验,优化了影响p型GaN性质的三个生长参数:Mg流量、生长温度和Ⅴ/Ⅲ比.过量的Mg源流量、过高的生长温度、过大的Ⅴ/Ⅲ比都会降低自由空穴浓度.还研究了退火温度对p型GaN的载流子浓度和光学性质的影响.实验结果表明,700～750℃范围为最佳退火温度.