Distribution of nitrogen and phosphorus in sediment cores and overlying water of Donghu Lake

In this study, the seasonal, vertical distribution of various phosphorus and nitrogen forms in the sediment and overlying water of Donghu Lake were investigated. The concentration of total nitrogen (TN) in overlying water was high in spring and autumn, but that of NO3--N reached its peak in autumn. From summer to autumn and from winter to spring, the concentration of phosphorus in overlying water decreased, while it increased from autumn to winter. Vertical characteristic forms of phosphorus in sediment cores are total phosphorus (TP), labile phosphorus (LP), Fe-P and Al-P, obviously enriched in the surface layer (0-10 cm), but their concentrations are observably reduced along with the depth of sediment. The research is of important theoretical and practical value to understand the status and to control the developmental trend of eutrophication in Donghu Lake.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Submicrosecond rearrangeable nonblocking silicon-on-insulator thermo-optic 4 X 4 switch matrix

A rearrangeable nonblocking silicon-on-insulator-based thermo-optic 4 X 4 switch matrix is designed and fabricated. A spot-size converter is integrated to reduce the insertion loss, and a new driving circuit is designed to improve the response speed. The insertion loss is less than 10 dB, and the response time is 950 us. (c) 2007 Optical Society of America

Si doping effect on self-organized InAs/GaAs quantum dots

In situ ultra high vacuum scanning probe microscopy (SPM) and low-temperature :photoluminescence (PL) studies have been performed on Si-doped self-organized InAs/GaAs quantum dots samples to investigate the Si doping effects. Remarkably, when Si is doped in the sample, according to the SPM images, more small dots are formed when compared with images from undoped samples. On the PL spectra, high-energy band tail which correspond to the small dots appear, with increasing doping concentration, the integral intensity of the high-energy band tail account for the whole peak increase too. We relate this phenomenon to a model that takes the Si atom as the nucleation center for QDs formation. (C) 1999 Elsevier Science B.V. All rights reserved.

Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52x10(20) cm(-3) with Hall mobility of about 1 cm(2)/Vs and resistivity of 1.6 similar to 2.2x10(-2) Omega cm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Omega cm for resistivity, 5.3x10(18) cm(-3) for hole carrier concentration, and 7 cm(2)/VS for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

基于进化分布式本体的语义Web服务动态发现

在语义Web服务中, 确认分布式本体变动、维护其一致性并实现基于进化的分布式本体的Web服务语义查询成为了一个重要挑战.该文使用SHOQ(D)的分布式描述逻辑扩展 (DDL) 描述相互关联的异构分布式本体,提出了优先分布式知识库(PDK)的概念,探讨了PDK方法的一些重要属性.PDK用来描述分布式本体的进化和更新, 它适用于语义Web服务环境.基于PDK, 文中还给出了相应的语义查询方法,Web服务的语义查询可以归结为检测同这个查询对应的概念在最优先PDK中的p -可满足性.

用双切比雪夫方法近似含噪音移动对象轨迹

在移动对象数据库中需要存储大量移动对象的历史轨迹。为了降低存储开销，同时提高轨迹查询的效率，研究者们提出了很多基于时间序列的方法对轨迹序列进行压缩近似及索引。但是这些方法不能用于不精确的轨迹数据。本文针对含噪音的轨迹数据提出了一种新的近似算法。该方法充分利用了轨迹位置数据和速度数据的导数关系，在不增加计算复杂度的情况下，能够更好地处理不精确的轨迹。在相同的压缩比下，用双切比雪夫方法重建的轨迹比现有方法更加接近移动对象的真实轨迹。

吴起县不同退耕阶段农地资源生态服务价值评估分析

以陕西省吴起县为例,对三个不同退耕阶段农地资源生态服务价值进行了评估,分析了各阶段农地资源生态服务价值的变化,探讨了退耕还林(草)工程的实施对农地资源生态服务价值的影响.结果表明:退耕前、退耕初期及退耕中期吴起县农地资源的直接经济产出价值和间接生态服务价值之比分别为:1∶0.84、1∶2.63和1∶3.56.随着退耕工程的不断深入,农地资源总生态服务价值由退耕前的45 402.81万元增加到了退耕初期的81 603.81万元和退耕中期的164 925.46万元,实现了经济效益与生态效益的同步发展.

泽兰实蝇的生态学特性及对紫茎泽兰的控制作用

紫茎泽兰(Eupatorium adenophorum Spreng)是一种原产于墨西哥的恶性杂草。近年来已严重妨碍了云南省甚至整个西南地区、林、牧业的发展。自1984年8月引进泽兰实蝇(procecidochares utilis Stone)开展了生物防治研究。已在云南境内七个地州（市）定殖扩散。为了解泽兰实蝇的控制作用，本文从研究泽从实蝇生态学特性入手。分析了泽兰实蝇生态学特性与紫茎泽兰生物防治的关系。定量地评价了泽兰实蝇的控制作用。并且应用灰色系统中局势决策方法比较了不同环境条件下的生防效果。其主要结果如下：1、泽兰实蝇雌性与雄性成虫的存活曲线均近于Deevery I型；雌雄一并来看。则成虫存活曲线为Deevery II型；雌性成虫的寿命比雄性长。产卵峰期多在产卵开始后的第二到第四天。2、泽兰实蝇幼虫与成虫均存在密度制约。在平均每雌占有两枝供试产卵枝条时产卵量最大。同时孕育虫的后代也最多。3、泽兰实蝇的净增殖率R. = 24.365。内禀增长率r_m = 0.055。周限增长值λ = 1.057。种群加倍时间t = 12.603天，世代周期T = 58.371天。4、泽兰实蝇幼虫种群的空间分布呈聚集型且接近于负二项分布。一般来说平均拥挤度大的地区，对紫茎泽兰的控制效果也好。5、利用计算机模拟术对泽兰实蝇的控制作用进行拟合。较之以寄生率来评价生防效果更为科学，也更为符合客观实际。6、对不同环境下的控制作用进行局势决策可知，温度较高。湿度偏低的地区。生防效果优于那些温度较低或温、温度均较高的地区。在本文所进行调查的几个样地中，泽兰实蝇控制效果大小的次序依次为：元江＞宜良＞双柏＞思茅。