Estimation of the natural purification rate of a eutrophic lake after pollutant removal

Pollution resulting from increased human activities is threatening Lake Donghu, its effects being characterized by serious eutrophication. A steady increase of phosphorus loading is the most important factor of the lake eutrophication. Pollution external control projects are being implemented and will be accomplished before the year 2010. In order to predict the restoration rate by the lake's self-purification after the projects of external control, a model of predicting the removal rate of total phosphorus (TP) from lake water is developed, and a brief method of estimating the release and export rate of sediment phosphorus is suggested. Results show that, on the premise of external loading fully controlled. The restoration needs about 55 years or more. Obviously, the great P pool in the sediment will be a limiting factor of preventing the improvement of water quality after the external loading is under control. Based on the estimation we conclude that after the external control projects before 2010, in order to restore the lake in a few years, although highly cost, the first step must be the sediment dredging to remove internal loading. The second step is diverting water of River Changjiang into the lake to accelerate the improvement of lake water. Otherwise, removal of pollutant sources will become meaningless. (c) 2006 Elsevier B.V. All rights reserved.

Photosynthetic recovery of desiccated intertidal seaweeds after rehydration

Intertidal seaweeds experience periodical desiccation and rehydration to different extents due to the tidal cycles and their vertical distributions. Their photosynthetic recovery process during the rehydration may show different patterns among the seaweeds from different zonations or depths at intertidal zone. In this study 12 species of seaweeds collected from the upper, middle, lower and sublittoral zones were examined. The relationship of the photosynthetic recovery to vertical distribution was assessed by comparing their patterns of photosynthetic and respiratory performances after rehydration following desiccation. Both the photosynthesis and dark respiration declined during emersion, showing certain degrees of recovery after re-immersion into seawater for most species, but the extents were markedly different from one species to the other. The species from upper intertidal zone after being rehydrated for 1 hour, following 2 hours of desiccation, achieved 100 % recovery of their initial physiological activity, while most of the lower or sublittoral species did not achieve full recovery. It is the ability to withstand desiccation stress (fast recovery during rehydration), but not that to avoid desiccation (water retaining ability) that determines the distribution of intertidal seaweeds. Such physiological behavior during rehydration after desiccation reflects the adaptive strategy of intertidal seaweeds against desiccation and their capability of primary production in the process of rehydration.

Present status and changes of the phytoplankton community after invasion of Neosalanx taihuensis since 1982 in a deep oligotrophic plateau lake, Lake Fuxian in the subtropical China

Phytoplankton assemblages in the subtrophical oligotrophic Lake Fuxian, the second deepest lake in China, were investigated monthly from September 2002 to August 2003. A total of 113 species belonging to seven phyla were identified, among them, a filamentous green alga, Mougeotia sp., dominated almost throughout the study period and comprised most of the total phytoplankton biomass. Mougeotia sp. has made a substantial development during the past decades: it was absent in 1957, only occasionally present in 1983, increased substantially in 1993, and became predominant in 2002-2003. It is likely that natural invasion of the Taihu Lake noodlefish (Neosalanx taihuensis) has led to a change of dominant herbivorous zooplankton from small to large calanoid, which has increased grazing pressure on small edible algae, and thus has indirectly favored the development of the inedible filamentous Mougeotia sp.

Retention of the developmental pluripotency in medaka embryonic stem cells after gene transfer and long-term drug selection for gene targeting in fish

Embryonic stem (ES) cells provide a unique tool for introducing random or targeted genetic alterations, because it is possible that the desired, but extremely rare recombinant genotypes can be screened by drug selection. ES cell-mediated transgenesis has so far been limited to the mouse. In the fish medaka (Oryzias latipes) several ES cell lines have been made available. Here we report the optimized conditions for gene transfer and drug selection in the medaka ES cell line MES1 as a prelude for gene targeting in fish. MES1 cells gave rise to a moderate to high transfection efficiency by the calcium phosphate co-precipitation (5%), commercial reagents Fugene (11%), GeneJuice (21%) and electroporation (>30%). Transient gene transfer and CAT reporter assay revealed that several enhancers/promoters and their combinations including CMV, RSV and ST (the SV40 virus early gene enhancer linked to the thymidine kinase promoter) were suitable regulatory sequences to drive transgene expression in the MES1 cells. We show that neo, hyg or pac conferred resistance to G418, hygromycin or puromycin for positive selection, while the HSV-tk generated sensitivity to ganciclovir for negative selection. The positive-negative selection procedure that is widely used for gene targeting in mouse ES cells was found to be effective also in MES1 cells. Importantly, we demonstrate that MES1 cells after gene transfer and long-term drug selection retained the developmental pluripotency, as they were able to undergo induced differentiation in vitro and to contribute to various tissues and organs during chimeric embryogenesis.

The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing

We have studied how the optical properties of InAs self-assembled quantum dots (QDs) grown on GaAs substrate are affected when depositing an InAlAs/InGaAs combination overgrowth layer directly on it by rapid thermal annealing (RTA). The photoluminescence measurement demonstrated that the InAs QDs experiences an abnormal variation during the course of RTA. The model of transformation of InAs-InAlAs-InGaAlAs could be used to well explain the phenomena. (C) 2003 Elsevier Science B.V. All rights reserved.

Double-wave function of RLC circuit after quantization

Quantization of RLC circuit is given and described by a double-wave function. A comparison between classical limit result and those of classical theory is made.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration

Fe-doped semi-insulating (SI) InP has become semi-conducting (SC) material completely after annealing at 900 V for 10 hours. Defects in the SC and SI InP materials have been studied by deep level transient spectroscopy (DLTS) and thermally stimulated current spectroscopy (TSC) respectively. The DLTS only detected Fe acceptor related deep level defect with significant concentration, suggesting the formation of a high concentration of shallow donor in the SC-InP TSC results confirmed the nonexistence of deep level defects in the annealed SI-InP. The results demonstrate a significant influence of the thermally induced defects on the electrical properties of SI-InP. The formation mechanism and the nature of the shallow donor defect have been discussed based on the results.

CONTROLLING OF SCHOTTKY-BARRIER HEIGHTS FOR AU/N-GAAS AND TI/N-GAAS WITH HYDROGEN INTRODUCED AFTER METAL-DEPOSITION BY BIAS ANNEALING

Up to now, in most of the research work done on the effect of hydrogen on a Schottky barrier, the hydrogen was introduced into the semiconductor before metal deposition. This letter reports that hydrogen can be effectively introduced into the Schottky barriers (SBs) of Au/n-GaAs and Ti/n-GaAs by plasma hydrogen treatment (PHT) after metal deposition on [100] oriented n-GaAs substrates. The Schottky barrier height (SBH) of a SB containing hydrogen shows the zero/reverse bias annealing (ZBA/RBA) effect. ZBA makes the SBH decrease and RBA makes it increase. The variations in the SBHs are reversible. In order to obtain obvious ZBA/RBA effects, selection of the temperature for plasma hydrogen treatment is important, and it is indicated that 100-degrees-C for Au/n-GaAs and 150-degrees-C for Ti/n-GaAs are suitable temperatures. It is concluded from the analysis of experimental results that only the hydrogen located at or near the metal-semiconductor interface, rather than the hydrogen in the bulk of either the semiconductor or the metal, is responsible for the ZBA/RBA effect on SBH.

NiO removal of Ni/Au Ohmic contact to p-GaN after annealing

The Ni/Au contact was treated with oxalic acid after annealing in O_2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.