Effect of food and temperature on the growth and development of Moina irrasa (Cladocera : Moinidae)

Body length, instar duration, fecundity, and survival rate of Moina irrasa from a subtropical Chinese lake were studied at three food concentrations (4, 8, and 40 mg/L, wet weight) and six temperatures (10, 15, 20, 25, 30, and 35degreesC) in the laboratory. Body length tended to decrease with increase of temperature, while the trend was reversed as food concentration rose. M. irrasa had three juvenile instars, except there were four at 10degreesC, and the number of adult instars showed great variation (3-15). Water temperature and food concentration both affected the duration time of adult instars. The largest broods were from the third to sixth adult instars, depending on food and temperature, and the mean highest number of offspring per brood was 56 at 25degreesC. A significant relationship between body length and brood size appeared at high (40 mg/L) and medium (8 mg/L) food concentrations, while there was no significant relationship at low food concentration except at 25 degreesC. The intrinsic rate of population increase ranged between 0.104 and 1.825 ind./day.

Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field

A detailed model for semiconductor linear optical amplifiers (LOAs) with gain clamping by a vertical laser field is presented, which accounts the carrier and photon density distribution in the longitudinal direction as well as the facet reflectivity. The photon iterative method is used in the simulation with output amplified spontaneous emission spectrum in the wide band as iterative variables. The gain saturation behaviors and the noise figure are numerically simulated, and the variation of longitudinal carrier density with the input power is presented which is associated with the ON-OFF state of the vertical lasers. The results show that the LOA can have a gain spectrum clamped in a wide wavelength range and have almost the same value of noise figure as that of conventional semiconductor optical amplifiers (SOAs). Numerical results also show that an LOA can have a noise figure about 2 dB less than that of the SOA gain clamped by a distributed Bragg reflector laser.

Raman scattering from GaP nanowires

A complete Raman study of GaP nanowires is presented. By comparison with the Raman spectra of GaP bulk material, microcrystals and nanoparticles, we give evidence that the Raman spectrum is affected by the one-dimensional shape of the nanowires. The Raman spectrum is sensitive to the polarization of the laser light. A specific shape of the overtones located between 600 and 800 cm(-1) is actually a signature of the nanowires. Some phonon confinement and thermal behavior is also observed for nanowires.

黄土坡面土壤侵蚀中溶质随径流迁移的水动力特性研究

通过对比分析坡面水流的水动力参数与径流溶质迁移量间的关系,研究了不同地表状况下黄土坡面土壤溶质随径流迁移的水动力学特性,以求深入了解和认识坡面土壤侵蚀中溶质随径流迁移的本质机理。研究结果表明:不同坡面地表状况下,糙率系数和平均水深之比(n/h)与侵蚀过程中随径流迁移的溶质存在一定的关系,径流溶质Br-平均浓度、径流溶质Br-的平均流失率以及径流溶质Br-的相对流失量均随n/h的增加而减小。径流溶质Br-的平均流失率以及径流溶质Br-的相对流失量与水流水动力学参数n/h具有指数关系。

HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.

ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT

The influence of oxygen defects on the resistivity and mobility of silicon wafers is discussed. Grinding processes were performed on the surfaces of samples in order to obtain the information on interior defects of the samples. Spreading resistivity and Hall measurements prove that SiO(x) complexes alone result in resistivity increase and mobility decrease. Deep level transient spectroscopy experiments prove that SiO(x) complexes alone are electrically active. A mechanism of carrier scattering by electrically active SiO(x) complex is proposed to explain the changes of resistivity and mobility.

近邻边界Fisher判别分析

将数据集进行合理的维数约简对于一些机器学习算法效率的提高起着至关重要的影响.该文提出了一种利用数据点邻域信息的线性监督降维算法:近邻边界Fisher判别分析(Neighborhood Margin Fisher Discriminant Analysis,NMFDA).NMFDA尝试将每一数据点邻域内最远的同类数据点和最近的异类数据点之间的边界在投影子空间内尽可能地扩大,从而提高基于距离的识别算法的准确率.同时为了解决非线性降维问题,提出了Kernel NMFDA,通过在几个标准人脸数据库上与其它降维算法的对比识别实验,验证了提出算法的有效性.