鲤肝细胞抗氧化系统对微囊藻毒素毒性的反应

用 10 μg/L的微囊藻毒素LR(Microcystin LR ,MC LR)处理鲤肝细胞培养物 ,检测鲤肝细胞抗氧化系统的 6项指标。结果表明 ,MC LR处理后活性氧 (ROS)含量明显升高 ,还原型谷胱甘肽 (GSH)含量迅速下降 ,超氧化物歧化酶(SOD)、过氧化氢酶 (CAT)的活性明显升高 ,谷胱甘肽过氧化物酶 (GSH Px)活性在MC LR处理 15min后也有明显上升 ,但谷胱甘肽S 转移酶 (GST)活性在MC LR处理后没有明显变化。另外 ,还从氧自由基理论解释了微囊藻毒素造成鲤肝

生态因子对麦黄草休眠芽萌发的影响

通过野外调查和萌发实验 ,研究了生态因子对麦黄草 (Potamogeton crispus)休眠芽萌发的影响 ,结果表明 :(1)底质类型对麦黄草休眠芽的萌发几无影响。 (2 )光照能促进麦黄草休眠芽萌发。 (3 )水深的增加可显著延长萌发起始时间 ,但不改变休眠芽的最终萌发率。 (4 )休眠芽在自然状况下萌发第 2幼苗的百分率极小 ,但取食幼苗能极显著地提高其萌发第 2幼苗的百分率。研究结果提示 :可在不同底质的水体播种麦黄草休眠芽以引种麦黄草 ;休眠芽极强的萌发出第 2幼苗的潜势很可能是麦黄草成为许多

关于牛首科吸虫的分类地位(吸虫纲:复殖目:牛首科)

关于牛首科 (即腹口类 )吸虫的分类地位 ,一直存在着意见分歧 ,一种观点认为牛首科所代表的腹口类与前口类应作为两个分别独立而并列的分类单元 ;另一种观点认为腹口类在分类上应归于前口类中的某一分类单元。本文通过对牛首科吸虫的特征分析以及与前口类吸虫的比较 ,发现牛首科吸虫在成虫、毛蚴、胞蚴、尾蚴、宿主类型、染色体等方面都与前口类有显著差别。因而支持前一种分类观点 ,不应将牛首科放入前口类中。

Localization and tracking of phonating finless porpoises using towed stereo acoustic data-loggers

Cetaceans produce sound signals frequently. Usually, acoustic localization of cetaceans was made by cable hydrophone arrays and multichannel recording systems. In this study, a simple and relatively inexpensive towed acoustic system consisting of two miniature stereo acoustic data-loggers is described for localization and tracking of finless porpoises in a mobile survey. Among 204 porpoises detected acoustically, 34 individuals (similar to 17%) were localized, and 4 of the 34 localized individuals were tracked. The accuracy of the localization is considered to be fairly high, as the upper bounds of relative distance errors were less than 41% within 173 m. With the location information, source levels of finless porpoise clicks were estimated to range from 180 to 209 dB re 1 mu Pa pp at 1 m with an average of 197 dB (N=34), which is over 20 dB higher than that estimated previously from animals in enclosed waters. For the four tracked porpoises, two-dimensional swimming trajectories relative to the moving survey boat, absolute swimming speed, and absolute heading direction are deduced by assuming the animal movements are straight and at constant speed in the segment between two consecutive locations.

Comparative studies on physiological responses to phosphorus in two phenotypes of bloom-forming Microcystis

Toxic Microcystis blooms frequently occur in eutrophic water bodies and exist in the form of colonial and unicellular cells. In order to understand the mechanism of Microcystis dominance in freshwater bodies, the physiological and biochemical responses of unicellular ( 4 strains) and colonial ( 4 strains) Microcystis strains to phosphorus ( P) were comparatively studied. The two phenotype strains exhibit physiological differences mainly in terms of their response to low P concentrations. The growth of four unicellular and one small colonial Microcystis strain was significantly inhibited at a P concentration of 0.2 mg l - 1; however, that of the large colonial Microcystis strains was not inhibited. The results of phosphate uptake experiments conducted using P- starved cells indicated that the colonial strains had a higher affinity for low levels of P. The unicellular strains consumed more P than the colonial strains. Alkaline phosphatase activity in the unicellular strains was significantly induced by low P concentrations. Under P- limited conditions, the oxygen evolution rate, Fv/ Fm, and ETRmax were lower in unicellular strains than in colonial strains. These findings may shed light on the mechanism by which colonial Microcystis strains have an advantage with regard to dominance and persistence in fluctuating P conditions.

Two new species of Actinolaimidae thorne, 1939 (Nemata : Dorylaimida) from China

Two new species of Actinolaimidae are described from China. Trachactinolaimus brevicaudatus n. sp. is 3.4-4.4 mm long; a = 40-60, b = 3.5-5.2, c = 20-21 in female and 34-39 in male; odontostyle length is 29-33 mu m; spicules are 67-77 mu m long; and the stoma has four onchia with numerous mural denticles. The female has a longitudinal vulva, and the male has 20 to 23 contiguous ventromedian supplements. Egtitus sinensis n. sp. is 1.7-2.2 mm long; a = 24-33, b = 3.1-3.9, c = 16-19 in female and 0.7-0.9 in male; odontostyle length is 25-29 mu m; spicules are 55-56 mu m long; and the prerectum 53-77 pm long. The cardia is short and blunt conoid, 13-19 mu m long. The male has 12 to 13 ventromedian supplements at intervals of 2-3 mu m.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping

1.5 mu m. n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm(2) for 1000 mu m long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm(2)/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5 mu m devices have been demonstrated.

Silica and alumina thin films grown by liquid phase deposition

This work demonstrates the condition optimization during liquid phase deposition (LPD) Of SiO2/GaAs films. LPD method is further applied to form Al2O3 films on semiconductors with poison-free materials. Proceeding at room temperature with inexpensive equipment, LPD of silica and alumina films is potentially serviceable in microelectronics and related spheres.

Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy

The in-plane optical anisotropy of three groups of GaAs/AlGaAs quantum well structures has been studied by reflectance-difference spectroscopy (RDS). For GaAs/Al0.36Ga0.64As single QW structures, it is found that the optical anisotropy increases quickly as the well width is decreased. For an Al0.02Ga0.98As/AlAs multiple QW with a well width of 20nm, the optical anisotropy is observed not only for the transitions between ground states but also for those between the excited states with transition index n up to 5. An increase of the anisotropy with the transition energy, or equivalently the transition index n, is clearly observed. The detailed analysis shows that the observed anisotropy arises from the interface asymmetry of QWs, which is introduced by atomic segregation or anisotropic interface roughness formed during the growth of the structures. More, when the 1 ML InAs is inserted at one interface of GaAs/AlGaAs QW, the optical anisotropy of the QW can be increased by a factor of 8 due to the enhanced asymmetry of the QW. These results demonstrate clearly that the RDS is a sensitive and powerful tool for the characterization of semiconductor interfaces.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.

Structural and optical investigation of Mn-doped ZnS nanocrystals

Using a solution-based chemical method, we have prepared ZnS nanocrystals doped with high concentration of Mn2+. The X-ray diffraction analysis confirmed a zinc blende structure. The average size was about 3 nm. Photoluminescence spectrum showed room temperature emission in the visible spectrum, which consisted of the defect-related emission and the T-4(1)-(6)A(1) emission of Mn2+ ions. Compared with the undoped sample, the luminescence of the ZnS:Mn sample is enhanced by more than an order of magnitude, which indicated that the Mn2+ ions can efficiently boost the luminescence of ZnS nanocrystals.

Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)

InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.

Raman scattering and photoluminescence studies of Zn1-xMnxO nanowires via vapor phase growth

In this paper, we investigated the Raman scattering and photoluminescence of Zn1-xMnxO nanowires synthesized by the vapor phase growth. The changes of E-2(High) and A(1(LO)) phonon frequency in Raman spectra indicate that the tensile stress increases while the free carrier concentration decreases with the increase of manganese. The Raman spectra exited by the different lasers exhibit the quantum confinement effect of Zn1-xMnxO nanowires. The photoluminescence spectra reveal that the near band emission is affected by the content of manganese obviously. The values Of I-UV/G decrease distinctly with the manganese increase also demonstrate that more stress introduced with the more substitution of Mn for Zn.