120 resultados para 386
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湖北省自然科学基金
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作者于1984、1987和1988年对长江三峡地区的原生动物区系组成和生态分布进行了调查。从奉节下至宜昌的峡区共鉴定了320种原生动物,包括鞭毛虫(无色植鞭虫和动鞭毛虫)40种、肉足虫87种和纤毛虫193种。其中有2新种、4新亚种和87种新记录。峡区原生动物绝大部分可在我国其它地区存在,无地理分布差异。根据出现率的高低分析,主要优势种是珍珠映毛虫、钩刺斜管虫、瞬目膜袋虫和小轮毛虫,以第一优势种珍珠映毛虫为代表的成分反映了亚热带特征,代表了东洋界的地理成分。宜昌干流及支流的种类最多,后者为其它江段支流的2.
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Temporal and spatial changes in delta(13) C and delta 15 N of particulate organic matter (POM) and Hemiculter leucisculus were studied in the Yangtze River of China. Isotopic signatures of POM showed seasonal variations, which was assumed to be associated with allochthonous organic input and autochthonous phytoplankton growth. delta C-13 of H. leucisculus was 1.1 % higher than that of POM, which suggested that the food source of H. leucisculus was mostly from the POM. A mass balance model indicated the trophic position of H. leucisculus in the food web of Yangtze River was estimated to be 2.0 - 2.1, indicating that this fish mainly feeds on planktonic organic matter, which agreed with previous gut content analysis.
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The propagation losses in single-line defect waveguides in a two-dimensional (2D) square-lattice photonic crystal (PC) consisted of infinite dielectric rods and a triangular-lattice photonic crystal slab with air holes are studied by finite-difference time-domain (FDTD) technique and a Pade approximation. The decaying constant beta of the fundamental guided mode is calculated from the mode frequency, the quality factor (Q-factor) and the group velocity v(g) as beta = omega/(2Qv(g)). In the 2D square-lattice photonic crystal waveguide (PCW), the decaying rate ranged from 10(3) to 10(-4) cm(-1) can be reliably obtained from 8 x 10(3)-item FDTD output with the FDTD computing time of 0.386 ps. And at most 1 ps is required for the mode with the Q-factor of 4 x 10(11) and the decaying rate of 10(-7) cm(-1). In the triangular-lattice photonic crystal slab, a 10(4)-item FDTD output is required to obtain a reliable spectrum with the Q-factor of 2.5 x 10(8) and the decaying rate of 0.05 cm(-1). (c) 2004 Elsevier B.V. All rights reserved.
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Polycrystalline nano-grain-boundary multi-doping ZnO-based nonlinear varistors with higher concentration additives have been fabricated by sol-gel and standard solid-state reaction method, of which the best sample has a very high threshold voltage of E-b = 3300 V/mm. The effect of sintering processes, sintering temperature and sintering time, and that of additive concentration of Bi2O3 on E-b of the samples are systematically investigated. The results show that the great merit of sol-gel method is its high threshold voltage obtained by a lower sintering temperature than the solid-state reaction method. The present work also shows that five phases including solid-state sintering, rich Bi liquid phase formation and ZnO as well as other additive dissolution, ZnO grain growth, the secondary phase sufficient formation and evolution have been experienced at different sintering temperatures. The hole type defect and nonhomogeneity of the microstructure will lead to the decrease of threshold voltage, i.e., the grain size and the homogeneity of the material will be important factors and directly affect the characteristic of the varistor. The sintering characteristic and the influence of Bi2O3 content on the threshold voltage are also discussed. (c) 2004 Elsevier B.V. All rights reserved.
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High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.
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本文介绍一种基于386微机的实验室气体流量数据采集系统,着重讨论了硬件原理结构和软件设计思路,并给出了程序流程图以及部分电路原理图
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应用热扩散式树干茎流计(TDP)于2008年4月26日至5月31日,在黄土高原半干旱区安塞县对人工林刺槐展叶期树干液流及其气象、土壤水分等6个指标进行连续测定。结果表明:刺槐展叶期可分为芽期、展叶初期、中期和全叶期。在芽期,刺槐树干液流速率日变化无明显昼夜波动;在展叶初期至全叶期日变化呈现出从微弱波动逐渐增大到趋于平稳的剧烈波动;在展叶中期以后液流速率表现为上升快、下降缓慢的单峰曲线;在全叶期平均峰值约为0.0027cm.s-1;树干液流速率与光合有效辐射强度、大气温度、水蒸气压亏缺和风速呈极显著正相关,与相对湿度呈负相关,其相关程度依次为光合有效辐射强度>大气温度>水蒸气压亏缺>相对湿度>风速,且可用光合有效辐射强度和大气温度线性表达式来估测;土壤水分在展叶期呈逐渐减少趋势,但对树干液流的胁迫不显著;在展叶期刺槐单株日蒸腾耗水量随直径的增大而增大并与胸径呈良好的线性关系,可用来估算展叶期刺槐人工林蒸腾耗水量。
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La2Zr2O7是一种近年来才提出的新型热障涂层材料,该材料熔点高,在熔点以下不发生相变,热导率低,抗烧结及没有氧传输发生,这些特点使得它作为一种高温下应用的热障涂层材料越来越引起人们的重视。但是,由于该材料的热膨胀系数和断裂韧性比较低,它的实际应用受到了限制。 在本论文中,使用高压烧结的方法获得了致密化的纳米La2Zr2O7块体材料,并对其断裂韧性和热膨胀系数进行了研究。得到的La2Zr2O7纳米材料的断裂韧性和热膨胀系数分别为1.98MPam1/2和9.6×10-6K-1 (200-1000℃),这些数值明显高于非纳米的La2Zr2O7陶瓷(断裂韧性和热膨胀系数分别为1.40 MPam1/2 和 9.1×10-6 K-1,该结果表明纳米化是一种提高材料断裂韧性和热膨胀系数的有效方法。在La2Zr2O7纳米粉末中加入8YSZ纳米颗粒,高压烧结后使其颗粒充分生长,在得到的复相化合物中观察到形成了类似棒状晶体的自增韧相,使得复合材料的断裂韧性(1.88 MPam1/2)比La2Zr2O7有所提高,甚至超过了同样条件下制备的8YSZ样品的断裂韧性。 La2Zr2O7的断裂韧性也可以通过在基体中添加BaTiO3铁电材料得到明显的提高。当添加BaTiO3的体积含量达到10vol%时,4.5GPa,1450℃高压烧结10min得到的复合材料断裂韧性达1.98 MPam1/2,明显高于同条件下烧结的La2Zr2O7 (1.60MPam1/2)。应力诱导下BaTiO3的电畴转向是主要的增韧原因。随着BaTiO3颗粒添加的体积含量增加,复相化合物的热膨胀系数也明显提高。当掺杂20vol%BaTiO3时,得到的复合材料平均热膨胀系数达到10.2×10-6K-1 (150~1200℃)。 我们通过在4.5GPa, 1650℃高压烧结5min的方法还获得了掺杂YAG纳米颗粒的La2Zr2O7纳米复相陶瓷。在室温下测量了材料的维氏硬度,并通过压痕裂纹长度计算出了材料的断裂韧性。随着YAG纳米颗粒体积含量的增加,纳米复相陶瓷的断裂韧性和维氏硬度都依次增加,当添加20vol%的YAG纳米颗粒时达到最大,分别为1.93 MPam1/2和11.45GPa。断裂韧性增加的机理可归结为以下三点:一是YAG纳米颗粒的添加提高了La2Zr2O7基体的晶界强度,二是基体晶粒尺寸变化的影响,三是YAG纳米颗粒对裂纹的偏转和钉扎作用。添加微米YAG颗粒的复相化合物因为和纳米复相陶瓷具有不同的增韧机制,因此断裂韧性的变化趋势也不相同,在掺入10vol%的YAG微米颗粒时,复合材料的断裂韧性最大,而后降低,当掺入YAG微米粒子的体积含量达到20vol%时,断裂韧性甚至低于La2Zr2O7。 从20世纪90年代开始,电纺作为一种合成纤维的办法越来越吸引人们的注意。其合成的纤维长度长,直径均匀,并且组成范围很广。最初,电纺只是被用来合成一些有机聚合物的纤维,最近,很多研究组开始致力于使用电纺的方法合成复合纤维或者陶瓷纤维。 在本论文中,我们使用电纺的方法获得了La2Zr2O7纳米纤维和SiC单晶纳米线。1000℃煅烧得到的La2Zr2O7纳米纤维具有烧绿石结构,直径在200~500nm之间。同样的温度煅烧时得到的La2Zr2O7纳米纤维的比表面积要明显高于粉末样品的,表明纤维的抗烧结性能比粉末的高。得到的SiC纳米线直径在50~100nm之间,表面有一约5nm厚的无定形的SiO2薄层。 使用电纺的方法,恰当的控制煅烧条件,我们获得了La2Ce2O7, La2(Zr0.745Ce0.386)2O7.524和8YSZ中空纤维。这种中空结构减小了粒子之间的接触面积,提高了材料的抗烧结性能。在扫描电镜分析的基础上,我们总结了这些中空纤维的形成过程。
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研究了分子束外延生长的覆盖了1nm的InxAl1-xAs(x=0.2,O.3)和3nm的Ino2Gao8As复合应力缓冲层InAs/GaAs自组织量子点(QD)光致发光(PL)特性.加InAlAs层后PL谱红移到1.33μm,室温下基态和第一激发态间的跃迁能级差增加到86meV.高In组份的InAlAs有利于获得较长波长和较窄的半高宽(FWHM).对于覆盖复合应力缓冲层的QD不会使波长和FWHM发生显著变化,但可以使基态和第一激发态间的能级差进一步增大.这些结果归因于InAlAs能够有效的抑制In的偏析,减少应力,使QD保持较高的高度.同时,由于InAlAs具有较高的限制势垒,可以增加基态和第一激发态间的能级差.