268 resultados para 190-1175A


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A novel symmetrical charge transfer fluorene-based compound 2,7-bis (4-methoxystyryl)-9, 9-bis (2-ethylhexyl)-9H-fluorene (abbreviated as BMOSF) was synthesized and its nonlinear absorption was investigated using two different laser systems: a 140-fs, 800-nm Ti:sapphire laser operating at 1-kHz repetition rate and a 38-ps, 1064-nm Nd:YAG pulsed laser operating at 10-Hz repetition rate, respectively. Unique nonlinear absorption properties in this new compound were observed that rise from multiphoton absorption. The nonlinear absorption coefficients were measured to be 6.02

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The CaF2 single crystals with diameters up to 200 mm were successfully grown by modified temperature gradient technique (TGT), which are suitable for application as optical elements in the ultraviolet range. The optimizations of various growth parameters were systematically studied. Properties of as-grown CaF2 crystals were characterized by the nature of inclusions, dislocations, crystallinity, and impurities contents. The results showed that the dislocations and multinucleation were mostly constrained in the conical part of the crystals with the cylindrical parts having the best crystalline quality and lowest impurity contents. The high optical quality of TGT-grown CaF2 single crystals was also confirmed to have excellent optical transmission in 190-2500 nm and refractive index homogeneity. (c) 2005 Elsevier Ltd. All rights reserved.

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Yb:YAG single crystals with Yb doping concentration 5.4, 16.3, 27.1, 53.6, and 100 at.% were grown by the Czochralski process. The effects of Yb concentration on the absorption spectra (190-1 100nm), fluorescence spectra under 940nm and X-ray excitation were studied. The concentration quenching of fluorescence was observed when the Yb doping concentration reaches to as high as 27.1 at.% for Yb:YAG. Under 940 nm excitation, the influence of the self-absorption at 969 and 1029 nrn on the fluorescence spectra is not evident when the Yb doping concentration is as high as 27.1 at.%. However, it can greatly change the shape of fluorescence spectra of Yb:YAG when the Yb doping concentration reaches to above 53.6 at.%. (c) 2005 Elsevier B.V. All rights reserved.

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Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

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Large ruby with the size of circle divide75 x 45 mm was grown by temperature gradient technique for the first time. Absorption spectrum was carried out in the range of 190-800 nm by spectrophotometer, and the concentration spatial distribution of Cr3+ in ruby was calculated from the absorption coefficient that based on the Beer-Lambert's Law. Cr3+ ions gradually increase alone both the growth axis and the radial direction. The shape and ingredient of the inclusions were measured by means of Leitz ride field microscopy and scanning electron microscopy. Lane photos and X-ray omega scan show the good quality of as grown ruby. The optimized growth conditions were pointed out based on the observation. (C) 2004 Elsevier B.V. All rights reserved.

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Large-sized (similar to 2 inch, 50.8 mm) gamma-UA102 single crystal has been grown by conventional Czochralski (Cz) method, but the crystal ha's a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in gamma-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum (FWHM) values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium (VTE) technique was introduced to modify the crystal quality. After 1000 degrees C/48 h, 1100 degrees C/48 h, 1200 degrees C/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190 similar to 1900 nm at room temperature. When the VTE temperature was raised to 1300 degrees C, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality gamma-LiAlO2 crystal can be obtained.

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ZnO thin films were grown on single-crystal gamma-LiAlO2 (LAO) and sapphire (0001) substrate by pulsed laser deposition (PLD). The structural, optical and electrical properties of ZnO films were investigated. The results show that LAO is more suitable for fabricating ZnO films than sapphire substrate and the highest-quality ZnO film was attained on LAO at the substrate temperature of 550 degrees C. However, when the substrate temperature rises to 700 degrees C, lithium would diffuse from the substrate (LAO) into ZnO film which makes ZnO film on LAO becomes polycrystalline without preferred orientation, the stress in ZnO film increases dominantly and the resistivity of the film decreases exponentially. (c) 2005 Elsevier B.V. All rights reserved.

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gamma-LiAlO2 (LAO) single crystal has been grown by the Czochralski method. However, its quality was deteriorated due to lithium volatilization during the crystal growth. The full width at half maximum value drops from 116.9 to 44.2 arc sec after the LAO slice was treated by vapor transport equilibration at 1000, 1100, and 1200 degrees C/48 h in sequence. The treated slice shows higher optical transmission than the as-grown one in the measured wavelength range of 190-1900 nm, meanwhile, its absorption edge exhibits a blueshift. According to Raman spectra, the treated slice has homogeneous quality at different depths from surface to 0.01 mm. The expansion coefficient of the treated slice for a axis drops from 17.2398x10(-6)/degrees C to 16.5240x10(-6)/degrees C, and that for c axis drops from 10.7664x10(-6)/degrees C to 10.0786x10(-6)/degrees C.

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2μm波长激光对人眼安全,在相干探测风切变、非线性频率转换等方面有重要应用。2μm波长激光还可应用到激光医疗,由于其吸收深度浅,手术精度高于发射1μm波长的激光。

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SiO2薄膜由电子束蒸发方法沉积而成。用GPI数字波面光学干涉仪测量了不同沉积条件下玻璃基底镀膜前后曲率半径的变化,并确定了SiO2薄膜中的残余应力。在其他条件相同的情况下,当沉积温度由190℃升高到350℃时,SiO2薄膜中的压应力由一156MPa增大为-289MPa。氧分压由3.0×10^-3Pa升高到13.0×10^-3Pa时,SiO2薄膜中的应力由-223.5MPa变为20.4MPa。通过对薄膜折射率的测量,发现薄膜的堆积密度随沉积条件的改变也发生了规律性的变化。应力的变化主要是由于沉积时蒸发粒子

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用电子束热蒸发方法镀制了Al2O3材料的单层膜,对它们在空气中进行了250~400℃的高温退火。对样品的透射率光谱曲线进行了测量,计算了样品的消光系数、折射率和截止波长。通过X射线衍射仪(XRD)测量分析了薄膜的微观结构,采用表面轮廓仪测量了样品的表面均方根粗糙度。结果发现随着退火温度的提高光学损耗下降,薄膜结构在退火温度为400℃时仍然为无定形态,样品的表面粗糙度随退火温度的升高而增加。引起光学损耗下降起主导作用的是吸收而不是散射,吸收损耗的下降主要是由于退火使材料吸收空气中的氧而进一步氧化,从而使薄膜

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在中国科学院四局的组织领导下,中国科学院上海植物生理研究所、江苏省植物研究所、中科院华南植物研究所、北京林学院、中科院植物研究所北京植物园及中科院沈阳林业土壤研究所等6个单位,根据历年来广泛的调查和试验研究的资料,选辑了比较典型的植物伤害症状彩色照片190余幅,集体编著了这本《大气污染伤害植物症状图谱》。本书根据我国当前大气污染的实况,主要介绍了二氧化硫、氟化物、氯气、氨气和乙烯等五种污染物的伤害症状,并附有详细的文字说明。

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我国湖南黔阳农校于1964年开始水稻雄性不育研究,1970年全国各地陆续开展此项研究,当年冬,黔阳农校发现花粉败育的野生稻植株,为我国杂交水稻育成打开了突破口。1970年广东等省相继成立杂优协作组,1971年从湖南引入野败材料,开始了全国性的对水稻野败材料的研究。1972年被列为全国重大科研项目,有19个省市、自治区分别成立了协作组。同年,江西、湖南等省利用野败材料育成“二九矮”、“珍汕97”、“二九南I号”、“71-72”等第一批籼稻雄性不育系和保持系。1973年广东、广西、江西、湖南先后分别利用上述雄性不育系较大群体上获得“IR24”、“IR661”及“泰引一号”、“水田谷6号”等强恢复系,宣告我国水稻“三系”配套,制出第一批强优杂交水稻组合,取得了水稻杂优利用的重大突破。1974年,广西、广东、上海等省市在5600亩大面积上进行生产鉴定,证明取得显著增产效果。1976年全国种植面积100余万亩,到1979年单广东省种植面积就为190万亩,一般可比当家种增产2-3成。水稻“三系”杂优利用已成为我国水稻大面积增产的重要措施,经济效益巨大,1981年国家科委授予全国杂优协作组特等发明奖,广东省杂优协作组为全国五个重点获奖省区之一。