确定~(137)Cs背景值所需的采样点数与采样面积

137Cs背景值的确定是利用核示踪技术研究土壤侵蚀的前提和根本,直接关系到侵蚀速率计算的准确与否。而大部分研究对137Cs背景值的确定均采取随机采样,没有统一的采样点数与确定的采样面积。本研究利用网格加密采样法,对未扰动地和长期耕种且未平整的农耕地各两块样地的137Cs背景值空间变异进行了分析,结果表明:在未扰动地与农耕地采样地块,137Cs采样点数与背景值空间变异系数都存在指数回归关系;在未扰动地块137Cs背景值存在较大空间变异性,且随着网格面积的扩大137Cs空间变异系数表现为增加趋势,在0.25m2范围内选取最少11个样点才能满足试验精度;在农耕地采样地块,因长期的耕种作用使得137Cs在耕层中混合相对均匀,137Cs背景值空间变异性显著变小,最少选取7个样点就能满足试验精度,且不受采样面积的影响。

~(137)Cs示踪技术背景值研究进展与建议

利用环境核素137Cs示踪技术研究土壤侵蚀被越来越多的科研人员所采用,而背景值的确定是利用该技术研究土壤侵蚀的前提和根本,直接关系到侵蚀速率计算的准确与否。本文从137Cs背景值采样点的选取方式,137Cs全球空间分布预报模型以及影响137Cs沉降因素等方面进行了总结性综述,对137Cs背景值研究应注意的问题和今后研究重点提出了建议。

金属溶剂萃取的热力学研究 1.Er(NO_3)_3-TB -C_6H_(14) 体系2.CuSo_4-氨化P_(50)-16H_(14)体系

本文在溶液理论的基础上，用纯热力学方法研究了中性磷萃取剂-金属体系（TBP-Er(no_3)_3）和氨化P_(50)-金属体系（P_(50)-cus04）的平衡计算模型。对于TBP体系有下列萃取平衡Er(NO_3)_3 (a) + 3TBP_((0)) <-> Er(NO_3)_3. 3TBP_((0))对于氨化P50体系，在萃取剂大量过量下有下的平衡Er(NO_3)_3 (a) + 3TBP_((0)) <-> Er(NO_3)_3. 3TBP(0)对氧化P50体系，在萃取剂大量过量下有下的平衡Cu_((a))~(2+) + partial deriv H_2R_2_((0)) <-> Cu(HR_2)_2 + 2H~+。用Scatchard-hildebrand模型预测了C_6H_(24)-TBP二元体系的担力学性质，以近似地用于H_2O - 16H_4 - TBP三之体系，减少了实验工作量。用气相色谱法求得了三之体系H_2O - (6H_(14) - P_(50))的热力学平衡数据，由于改进了进样系统，使实验误差<2%。对二体系的水相，均采用Pitzer理论求算γ_(Er(WO_3)_3)，和γ_(Cn~(2+))。对有机相，用热力学关系求出了水，正已烷，萃取剂，的活度系数。实验结果用Scatchard-Hildebrand模型进行关联。使计算机上进行回归处理，求得萃取反应的热力学平衡常数Ka和萃合物的活度系数。计算中，将有效平衡常数进一步分解，以提出显函数项，并在图解数分中改进了计算方法，使得每条萃取等温成都解得到合理的积分值。Schatchard-Hildebrand模型能在较宽的有机相浓度区域应用。所得到的端值常数，可定性地分析各组分的相互作用。

CHARACTERIZATION OF HIGH FLUENCE NEUTRON-INDUCED DEFECT LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS USING A LASER DEEP-LEVEL TRANSIENT SPECTROSCOPY (L-DLTS)

Neutron irradiated high resistivity (4-6 kOMEGA-cm) silicon detectors in the neutron fluence (PHI(n)) range of 5 X 10(11) n/cm2 to 1 X 10(14) n/cm2 have been studied using a laser deep level transient spectroscopy (L-DLTS). It has been found that the A-center (oxygen-vacancy, E(c) = 0.17 eV) concentration increases with neutron fluence, reaching a maximum at PHI(n) almost-equal-to 5 X 10(12) n/cm2 before decreasing with PHI(n). A broad peak has been found between 200 K and 300 K, which is the result of the overlap of three single levels: the V-V- (E(c) = 0.38 eV), the E-center (P-V, E(c) = 0.44 eV), and a level at E(c) = 0.56 eV that is probably V-V0. At low neutron fluences (PHI(n) < 5 X 10(12) n/cm2), this broad peak is dominated by V-V- and the E-centers. However, as the fluence increases (PHI(n) greater-than-or-equal-to 5 X 10(12) n/cm2), the peak becomes dominated by the level of E(c) = 0.56 eV.

A novel noise optimization technique for inductively degenerated CMOS LNA

This paper proposes a novel noise optimization technique. The technique gives analytical formulae for the noise performance of inductively degenerated CMOS low noise amplifier (LNA) circuits with an ideal gate inductor for a fixed bias voltage and nonideal gate inductor for a fixed power dissipation, respectively, by mathematical analysis and reasonable approximation methods. LNA circuits with required noise figure can be designed effectively and rapidly just by using hand calculations of the proposed formulae. We design a 1.8 GHz LNA in a TSMC 0.25 pan CMOS process. The measured results show a noise figure of 1.6 dB with a forward gain of 14.4 dB at a power consumption of 5 mW, demonstrating that the designed LNA circuits can achieve low noise figure levels at low power dissipation.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.