三角帆蚌对水库水污染的水质调控模型及作用

2001年和2002年,试验水库分3批引进0+龄、1+龄三角帆蚌14.2万只进行"利用生物操纵技术治理水库水污染的研究"试验。文章从三角帆蚌的滤水量→浮游植物、有机碎屑过滤量→氮、磷量这一路线着手,设计了三角帆蚌通过浮游植物和有机碎屑的氮、磷利用模型、氮、磷年利用模型,并用该模型计算出第一至第三年度三角帆蚌利用水体的氮、磷量分别为1300、137;6190、654;8786、930kg。

三峡水库富营养化问题与对策研究

三峡水库蓄水后,大部分库湾已出现富营养化态势,并暴发了数次以甲藻(拟多甲藻)和硅藻(小环藻)为主的水华现象,特别是在春季。以香溪河库湾为例,分析两周年的营养状态变化,总体上说,除冬季外,大多数月份为富营养,在春季则为重富营养。对三峡水库22条入库支流库湾的营养状态进行综合评价,结果表明,有5条(22.7%)支流库湾为中营养,17条(77.3%)支流库湾为富营养(重富营养化支流库湾有10条,占45.5%);但三峡水库本身水质尚好,仍保持中营养状态。统计分析表明,入库支流流域的年均流量和流域面积与支流库湾叶绿

Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot (QD) lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210 nm and 1300 nm. For a QD laser with the cavity length of 1060 mu m, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4 x 10(6)cm(-2)). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs capping layer. (c) 2007 Elsevier B.V. All rights reserved.

A proposal for low cross-talk square-lattice photonic crystal waveguide intersection utilizing the symmetry of waveguide modes

We propose an approach to construct waveguide intersections with broad bandwidth and low cross-talk for square-lattice photonic crystals. by utilizing a vanishing overlap of the propagation modes in the waveguides created by defects which support dipole-like defect modes. The finite-difference time-domain method is used to simulate the waveguide intersection created in the two-dimensional square-lattice photonic crystals. Over a bandwidth of 30 nm with the center wavelength at 1300 nm, transmission efficiency above 90% is obtained with cross-talk below -30 dB. Especially, we demonstrate the transmission of a 500-fs pulse at 1.3 Am through the intersection, and the pulse after transmission shows very little distortion while the cross-talk remains at low level meantime. (c) 2006 Elsevier B.V. All rights reserved.

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition (MOCVD). The room temperature (RT) two-dimensional electron gas (2DEG) mobility was as high as 2215 cm(2)/V s, with a 2DEG concentration of 1.044 x 10(13)cm(-2). The 50 mm HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with a resistance uniformity of 2.02%. The 0.35 Pin gate length HEMT devices based on this material structure, exhibited a maximum drain current density of 1300 mA/mm, a maximum extrinsic transconductance of 314 mS/mm, a current gain cut-off frequency of 28 GHz and a maximum oscillation frequency of 60 GHz. The maximum output power density of 4.10 W/mm was achieved at 8 GHz, with a power gain of 6.13 dB and a power added efficiency (PAE) of 33.6%. (c) 2006 Elsevier B.V. All rights reserved.

Design of two-dimensional photonic crystal edge emitting laser for photonic integrated circuits

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benelits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(lambda/eta(slab))(3) for oscillation -mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

Si-based resonant-cavity-enhanced photodetector

We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) resonant-cavity-enhanced (RCE) photodetector fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300 nm. The buried oxygen layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5 V is measured 10.2 mA/W at 1285 nm, a full width at half maximum of 25 nm for the top-illumination RCE photodetector, 19 mA/W at 1305 nm, and a full width at half maximum of 14 nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305 nm, with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one. (C) 2001 Society of Photo-Optical Instrumentation Engineers.

Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN

Both Fourier transform infrared (FTIR) grazing incidence reflectivity and FTIR transmission methods have been used to study GaN films grown on alpha-Al2O3 (0001) substrates by atmospheric pressure metal-organic chemical vapor deposition and low pressure metal-organic chemical vapor deposition. The results show that in the frequency range from 400 to 3500 cm(-1) the signal-to-noise ratio of the FTIR grazing incidence measurement is far higher than that of the FTIR transmission measurement. Some new vibrational structures appearing in the former measurement have been discussed. The features around 1460 and 1300 cm(-1) are tentatively assigned to scissoring and wagging local vibrational modes of CH2 in GaN, respectively. (C) 1999 American Institute of Physics. [S0021-8979(99)06509-3].

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

软件需求工程--方法及工具评述

文中从需求工程的基本概念和研究内容出发，简单介绍了需求工程生命周期和需求规范等概念；比较全面地总结了现有的有代表性的需求工程开发方法和工具，对其中一些重要的方法及工具作了分类和评述，并指出了需求工程方法和工具开发与实际领域相脱离等不足之处；最后探讨了需求工程研究现状中存在的一些主要问题及一些相应的解决方案

稀土锰氧化物和双钙钛矿氧化物的合成及电磁性能研究

本文对钙钛矿锰氧化物La0.67Sr0.33MnO3、La0.67Sr0.33Mn1-xFexO3和双钙钛矿氧化物Sr2－xLaxMnMoO6、Sr2－xLaxMnWO6和Sr2(Ni，Co)WO6的结构、磁性和磁电阻效应进行了系统地研究。 利用溶胶-凝胶方法制得La0.67Sr0.33MnO3粉体，通过不同的烧结温度，可以对样品的微观结构进行调控。其中，晶界的状态对自旋电子的输运产生了明显的影响。900℃和1300℃烧结的样品，都出现了远低于居里温度的金属－半导体导电行为转变，表明自旋电子的传输不仅与晶粒的大小有关，而且与晶界状态密切联系。合适的烧结条件，可以得到大的，使用温区较宽的磁电阻效应。 在La0.67Sr0.33Mn1-xFexO3(0≤x≤0.2)体系中，Fe3＋的掺入没有明显改变La0.67Sr0.33MnO3的结构和晶胞参数，但却极大地降低了样品的居里温度。在x≥0.08时同样出现了低于居里温度的金属－半导体导电行为转变，这是由体系的铁磁态磁不均匀性导致的。电子顺磁共振研究表明，La0.67Sr0.33Mn1-xFexO3(0≤x≤0.20)的EPR谱中峰对峰宽（ΔHpp）在Tmin前后两种温区的线宽展宽机制不同。随着掺杂量的增加，在Tmin处的线宽逐渐变宽并且出现低场顺磁信号。x=0.20的样品，低场顺磁信号在380K左右开始衰减，与La0.67Sr0.33MnO3的顺磁信号具有类似的行为。我们利用相分离模型对系列样品的电子顺磁共振信号的变化规律进行了解释。 在Sr2－xLaxMnMoO6 (0≤x≤1)系列样品中，所有的样品都具有双钙钛矿有序结构。磁化强度、居里温度随掺杂量的增加而增大，但都存在磁受挫行为。在5T的外场下磁化强度依然没有饱和，实际测得的磁矩远远小于理论预测的结果。在低掺杂状态下出现分步磁化。La3+的掺入，不仅改变了体系电子能带的状况，而且极大的改变了体系的结构因素，两者竞争的结果，使体系的电磁性能产生了复杂的变化。

稀土(Er, Nd, Yb, Pr, Ho, Sm)有机/无机杂化材料的制备及发光性能研究

目前，国内外对于铕和铽等稀土配合物的可见区发光和应用都有大量研究，但对具有近红外发光（800-1700 nm）性能的稀土配合物的研究还处于起步阶段。由于稀土的近红外发光在光纤通讯、激光系统及诊断学等方面应用具有特殊的优点，越来越引起人们的兴趣和重视。 稀土近红外发光配合物的致命弱点是其光、热和化学稳定性较差，从而限制了其在很多领域的实际应用。而溶胶－凝胶材料和介孔材料具有良好的光、热和化学稳定性，能改善客体分子的结构环境和化学微环境，从而能有效提高客体分子的发光性能。因此，本论文将具有优良近红外发光性能的稀土配合物分别与上述两种基质复合，从实验和理论研究稀土近红外发光杂化材料的性能和应用价值，制备出具有良好稳定性的高效稀土近红外发光杂化材料，以期为光纤通讯、激光等领域提供潜在的候选材料。围绕这一宗旨，开展了如下工作： 通过原位技术分别得到了掺杂和嫁接[Ln(dbm)3phen]化合物（Ln = Er, Nd, Yb）的杂化凝胶材料，Ln-D-P gel和Xerogel-Ln。通过对其近红外发光性能的研究，表明材料中配体能很好的保护稀土离子，并将能量有效的传递给稀土离子。采用Judd-Ofelt理论对所得部分材料进行了光谱分析，基于实验数据和理论分析表明其具有潜在的光放大和激光应用价值。 选择了两种含全氟化烷基链的β-二酮配体Hhfth和Htfnb，通过功能化的phen-Si配体，将三元配合物[Ln(hfth)3phen] (Ln = Er, Nd, Yb, Sm)和[Pr(tfnb)3phen]成功共价嫁接到介孔MCM-41和SBA-15杂化材料中，得到的衍生材料Ln(hfth)3phen–MCM-41、Pr(tfnb)3phen–MCM-41和Ln(hfth)3phen–SBA-15、Pr(tfnb)3phen–SBA-15都保持了高度有序的介孔p6mm结构，并展现出稀土离子特征的近红外发射。所得稀土配合物功能化的材料的发射光谱能完全覆盖对光通讯极具应用价值的1300-1600nm区域。 通过对Er(dbm)3phen–M41(X, Y) (X = 1~14, Y = 3, 6, 12, 18, 24 h)材料系统的比较研究，选择了X = 12, Y = 6作为合成目标材料的优化参数，通过功能化的phen-Si配体将[Ln(dbm)3phen]配合物共价嫁接于有序介孔MCM-41和SBA-15中(Ln = Er, Nd, Yb)，所得两类材料Ln(dbm)3phenM41和Ln(dbm)3phenS15都保持了很好的介孔有序性，并具有良好的近红外发光性能。通过对Ln(dbm)3phenM41和Ln(dbm)3phenS15两类材料发光行为的比较，以及两类材料中稀土离子的含量及孔结构的分析，推出以SBA-15为载体得到的材料在相对发光强度和荧光寿命上，均比以MCM-41为载体的材料有所提高。 通过对8－羟基喹啉配体进行改性，合成了具有双功能的配体Q-Si，继而合成了共价嫁接8－羟基喹啉衍生物的介孔杂化材料Q–SBA-15，其形貌均一，并具有高度有序的介孔p6mm结构。通过配体交换反应，得到了嫁接稀土喹啉配合物的具有近红外发光性能的介孔杂化材料LnQ3–SBA-15 (Ln = Er, Nd, Yb)，其仍然保持高度有序的介孔结构，且外形呈现与母体材料Q–SBA-15相似的弯曲圆柱状。激发配体的吸收，LnQ3–SBA-15材料都分别展现出相应稀土离子特征的近红外发射，并详细分析和讨论了所得介孔杂化材料的近红外发光性能。