497 resultados para Cr4 ion
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,,,
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G-41,16S rRNA(1.7104U/mL)G-41,,G-41-68,,15Gy-54,6.22104U/mL,G-41-6815Gy-541.582.6515Gy-54,,,7.18104U/mL,:(g/100mL)10.55Na2HPO412H2O0.4KH2PO40.03Na2CO30.1MgSO40.0481(410-3mol/L)pH8.0,41,42-48h,
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::296,13,Bowens6,2,2(5070)GyE/(612)d,5.511.67GyE,1f/d,RTOGWHO:2009-05,13.5(125),100%29(CR)24(82.8%),(PR)5(17.2%),(RR)100%,22.8(95%CI:20.624.9)011(37.9%),9(31.0%),6(20.7%),2(6.9%),1(3.4%);:(12C6+),,
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Polypropylene (PP) microporous membranes were successfully prepared by swift heavy ion irradiation and track-etching. Polypropylene foils were irradiated with Au-197 ions of kinetic energy 11.4 MeV.u(-1) (total energy of 2245.8 MeV) and fluence 1x10(8) ions.cm(-2) at normal incidence. The damaged regions produced by the gold ions along the trajectories were etched in H2SO4 and K2Cr2O7 solutions leading to the formation of cylindrical pores in the membranes. The pore diameters of the PP microporous membranes increased from 380 to 1610 nm as the etching time increased from 5 to 30 min. The surface and cross-section morphologies of the porous membranes were characterized by scanning electron microscopy (SEM). The micropores in the membranes were found to be cylindrical in shape, homogeneous in distribution, and equal in size. Some mathematical relations of the porosity of the PP microporous membranes were established by analytic derivation. The microporous membranes were used in lithium-ion batteries to measure their properties as separators. The electrical conductivity of the porous membrane immersed in liquid electrolyte was found to be comparable to that of commercial separators by electrochemical impedance spectroscopy (EIS). The results showed that the porosity and electrical conductivity were dependent on the ion fluence and etching time. By adjusting these two factors, microporous membranes with good porosity and electrical conductivity were made that met the requirements for commercial use.
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(PP).11.4MeVu-1(2245.8MeV)197AuPP,1108ionscm-2.PP,(5-30min),380-1610nm.,,,..,(EIS),.,,.
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BJ1,,,12C6+BJ1:BJ1200~400 Gy,(LET)60 keV/m;BJ12%~21%;BJ117.48%,
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11.4MeV/u1108ions/cm2197Au,,;6001000nm,,,
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ZnO thin films were implanted at room temperature with 80 keV N+ or 400 keV Xe+ ions. The implantation fluences of N+ and Xe+ ranged from 5.0 x 10(14) to 1.0 x 10(17)/cm(2), and from 2.0 x 10(14) to 5.0 x 10(15)/cm(2), respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm(-1) appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm(-1) was found only in N-ion implanted samples, and Raman band at 470 cm(-1) was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations.
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,80keVN+400keVXe+ZnO,5.010141.01017/cm22.010145.01015/cm2.ZnO,.,99,435cm-1ZnOE2lowE2high;N+Xe+130578cm-1(),N+274cm-1,Xe+470cm-1,().N+Xe+,,(),ZnO.
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,,(0.05-0.1)mm,(0.1-0.2)mm
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(HIRFL-CSR),3.15MW(3kA,1.45kV),,,210-4,
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C60,200keVXen+(n=3,10,13,15,17,20,22,23)C60(AFM)RamanXen+C60,AFM,C60Xen+(),Raman,Xe,,,Raman,C60
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(HIRFL/HIRFL-CSR),,5%
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12C6+B1aZJAV-A1,,12C6+50Gy97%,34.2%12C6+,,,B1a44604588g/ml,11.1%14.7%ZJAV-Y1-203
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Magnesium aluminate spinel crystals (MgAl2O4 (1 1 0)) deposited with 30 nm Cu film on surface were implanted with 110 key Ar-ions to a fluence of 1.0 x 10(17) ions/cm(2) at 350 degrees C, and then annealed in vacuum condition at the temperature of 500, 600, 700, 800 and 900 degrees C for 1 h, respectively. Ultraviolet-visible spectrometry (UV-VIS), scanning electron microscopy (SEM), Rutherford backscattering (RBS) and transmission electron microscopy (TEM) were adopted to analyze the specimens. After implantation, the appearance of surface plasmon resonance (SPR) absorbance peak in the UV-VIS spectrum indicated the formation of Cu nanoparticles, and the TEM results for 500 degrees C also confirmed the formation of Cu nanoparticles at near-surface region. In annealing process, The SPR absorbance intensity increased at 500 and 700 degrees C, decreased with a blue shift of the peak position at 600 and 800 degrees C, and the peak disappeared at 900 degrees C. The SPR absorbance intensity evolution with temperature was discussed combined with other measurement results (RBS, SEM and TEM). (C) 2010 Elsevier B.V. All rights reserved.
