Turn-on fluorescent cyanide sensor based on copper ion-modified CdTe quantum dots

A new fluorescent sensor for the sensitive and selective detection of cyanide (CN-) in aqueous media was developed herein. The sensing approach is based on CN--modulated quenching behavior of Cu2+ toward the photoluminescence (PL) of CdTe quantum dots (QDs). In the presence of CN-, the PL of QDs that have been quenched by Cu2+ was found to be efficiently recovered, which then allows the detection of CN- in a very simple approach. Experimental results showed that the pH of the buffer solution, concentration of copper ions, and size of CdTe QDs all influenced the response of the sensor to CN-. Under the optimal conditions, a good linear relationship between the PL intensity and the concentration of CN- can be obtained in the range of 3.0 x 10(-7) to 1.2 x 10(-5) M, with a detection limit as low as 1.5 x 10(-7) M. In addition, the present fluorescent sensor possesses remarkable selectivity for cyanide over other anions, and negligible influences were observed on the cyanide detection by the coexistence of other anions or biological species (such as albumin and typical blood constituents).

Sensitive and Selective Sensor for Biothiols in the Cell Based on the Recovered Fluorescence of the CdTe Quantum Dots-Hg(II) System

Herein, a sensitive and selective sensor for biothiols based on the recovered fluorescence of the CdTe quantum dots (QDs)-Hg(II) system is reported. Fluorescence of QDs could be quenched greatly by Hg(II). In the presence of biothiols, such as glutathione (GSH), homocysteine (Hcy), and cysteine (Cys), however, Hg(H) preferred to react with them to form the Hg(II)-S bond because of the strong affinity with the thiols of biothiols rather than quenching the fluorescence of the QDs. Thus, the fluorescence of CdTe QDs was recovered. The restoration ability followed the order GSH > Hcy > Cys due to the decreased steric hindrance effect. A good linear relationship was obtained from 0.6 to 20.0 mu mol L-1 for GSH and from 2.0 to 20.0 mu mol L-1 for Cys, respectively. The detection limits of GSH and Cys were 0.1 and 0.6 mu mol L-1, respectively. In addition, the method showed a high selectivity for Cys among the other 19 amino acids. Furthermore, it succeeded in detecting biothiols in the Hela cell.

Anticancer Drug-DNA Interactions Measured Using a Photoinduced Electron-Transfer Mechanism Based on Luminescent Quantum Dots

A sensing system based on the photoinduced electron transfer of quantum dots (QDs) was designed to measure the interaction of anticancer drug and DNA, taking mitoxantrone (MTX) as a model drug. MTX adsorbed on the surface of QDs can quench the photoluminescence (PL) of QDs through the photoinduced electron-transfer process; and then the addition of DNA will bring the restoration of QDs PL intensity, as DNA can bind with MTX and remove it from QDs. Sensitive detection of MTX with the detection limit of 10 nmol L-1 and a linear detection range from 10 nmol L-1 to 4.5 mu mol L-1 was achieved. The dependence of PL intensity on DNA amount was successfully utilized to investigate the interactions between MTX and DNA. Both the binding constants and the sizes of binding site of MTX-DNA interactions were calculated based on the equations deduced for the PL recovery process. The binding constant obtained in our experiment was generally consistent with previous reports. The sensitive and speedy detection of MTX as well as the avoidance of modification or immobilization process made this system suitable and promising in the drug-DNA interaction studies.

Glutathione-capped CdTe quantum dots for the sensitive detection of glucose

A simple and sensitive assay system for glucose based on the glutathione (GSH)-capped CdTe quantum dots (QDs) was developed. GSH-capped CdTe QDs exhibit higher sensitivity to H2O2 produced from the glucose oxidase catalyzed oxidation Of glucose, and are also more biocompatible than other thiols-capped QDs. Based on the quenching of H2O2 on GSH-capped QDs, glucose can be detected. The detection conditions containing reaction time, the concentration of glucose oxidase and the sizes of QDs were optimized and the detection limits for glucose was determined to be 0.1 mu M; two detection ranges of glucose from 1.0 mu M to 0.5 mM and from 1.0 mM to 20 mM, respectively Were obtained. The detection limit was almost a 1000 times lower than other QDs-based optical glucose sensing systems. The developed glucose detection system was simple and facile with no need of complicated enzyme immobilization and modification of QDs.

Near infrared light-emitting diodes based on composites of near infrared dye, CdSe/CdS quantum dots and polymer

Near infrared (NIR) light emitting diodes employing composites of an IR fluorescent dye, CdSe/CdScore/shell semiconductor quantum dots and poly( N-vinylcarbazole) (PVK) have been demonstrated. The device, with a configuration of indium-tin-oxide (ITO)//PEDOT:PSS//PVK:NIR Dye:CdSe/CdS//Al, had a turn-on voltage of 7 V, emitted the NIR light with a maximum at 890 nm and the irradiance intensity of 96 mu W. The electroluminescence efficiency of 0.02% was achieved at a current density of 13 mA cm(-2).

White electroluminescence from a poly(N-vinylcarbazole) layer doped with CdSe/CdS core-shell quantum dots

Hybrid organic/inorganic white light-emitting diodes (LEDs) were fabricated of semiconductor polymer poly(N-vinylcarbazole) (PVK) doped with CdSe/CdS core-shell semiconductor quantum dots (QDs). The device, with a structure of indium-tin-oxide (ITO)vertical bar 3,4-polyethylene-dioxythiophene- polystyrene sulfonate (PEDOT:PSS)vertical bar PVK:CdSe/CdS vertical bar Al, emitted a pure white light spanning the whole visible region from 400 to 800 nm. The Commission Internationale del'Eclairage coordinates (CIE) remained at x = 0.33, y = 0.34 at wide applied voltages. The maximum brightness and electroluminescence (EL) efficiency reached 180 cd m(-2) at 19 V and 0.21 cd A(-1) at current density of 2 mA cm(-2), respectively. The realization of the pure white light emission is attributed to the incomplete energy and charge transfer from PVK to CdSe/CdS core-shell QDs.

Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots

On the basis of the density functional theory (DFT) within local density approximations (LDA) approach, we calculate the band gaps for different size SnO2 quantum wire (QWs) and quantum dots (QDs). A model is proposed to passivate the surface atoms of SnO2 QWs and QDs. We find that the band gap increases between QWs and bulk evolve as Delta E-g(wire) = 1.74/d(1.20) as the effective diameter d decreases, while being Delta E-g(dot) = 2.84/d(1.26) for the QDs. Though the similar to d(1.2) scale is significantly different from similar to d(2) of the effective mass result, the ratio of band gap increases between SnO2 QWs and QDs is 0.609, very close to the effective mass prediction. We also confirm, although the LDS calculations underestimate the band gap, that they give the trend of band gap shift as much as that obtained by the hybrid functional (PBE0) with a rational mixing of 25% Fock exchange and 75% of the conventional Perdew-Burke-Ernzerhof (PBE) exchange functional for the SnO2 QWs and QDs. The relative deviation of the LDA calculated band gap difference Lambda E-g compared with the corresponding PBE0 results is only within 5%. Additionally, it is found the states of valence band maximum (VBM) and conduction band minimum (CBM) of SnO2 QWs or QDs have a mostly p- and s-like envelope function symmetry, respectively, from both LDA and PBE0 calculations.

Electronic structure of ZnO wurtzite quantum wires

The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm are studied in the framework of six-band effective-mass envelope function theory. The hole effective-mass parameters of ZnO wurtzite material are calculated by the empirical pseudopotential method. It is found that the electron states are either two-fold or four-fold degenerate. There is a dark exciton effect when the radius R of the ZnO quantum wires is in the range of [3,19.1] nm (dark range in our model). The dark ranges of other wurtzite semiconductor quantum wires are calculated for comparison. The dark range becomes smaller when the |Delta(so)| is larger, which also happens in the quantum-dot systems. The linear polarization factor of ZnO quantum wires is larger when the temperature is higher.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Phosphine-Free Synthesis of High-Quality CdSe Nanocrystals in Noncoordination Solvents: "Activating Agent" and "Nucleating Agent" Controlled Nucleation and Growth

CdSe nanocrystals (NCs) are prepared in noncoordination solvents (1-octadecene (ODE) and paraffin liquid) with Ion g-chain primary alkylamine as the sole ligand, ODE-Se, and cadmium fatty acid salt as precursors. The obtained NCs meet the four fundamental parameters for high-quality NCs: high crystallinity, narrow size distribution, moderate photoluminescence quantum yield, and broad range size tunableness. Further, by simply regulating the relative molar ratio of alkylamine to cadmium precursor, the regular sized "nuclei" and final obtained NCs can be produced predictably within a certain size range.

Polaronic correction to the first excited electronic energy level in an anisotropic semiconductor quantum dot

Within the framework of second-order Rayleigh-Schrodinger perturbation theory, the polaronic correction to the first excited state energy of an electron in an quantum dot with anisotropic parabolic confinements is presented. Compared with isotropic confinements, anisotropic confinements will make the degeneracy of the excited states to be totally or partly lifted. On the basis of a three-dimensional Frohlich's Hamiltonian with anisotropic confinements, the first excited state properties in two-dimensional quantum dots as well as quantum wells and wires can also be easily obtained by taking special limits. Calculations show that the first excited polaronic effect can be considerable in small quantum dots.

Phase-type quantum-dot-array diffraction grating

A novel phase-type quantum-dot-array diffraction grating (QDADG) is reported. In contrast to an earlier amplitude-type QDADG [C. Wang , Rev. Sci. Instrum. 78, 053503 (2007)], the new phase-type QDADG would remove the zeroth order diffraction at some certain wavelength, as well as suppressing the higher-order diffractions. In this paper, the basic concept, the fabrication, the calibration techniques, and the calibration results are presented. Such a grating can be applied in the research fields of beam splitting, laser probe diagnostics, and so on.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.