Photoluminesence and electroluminescence of the blue emission of devices based on poly(p-phenylenevinylene) copolymers

Bright blue polymer light-emitting diodes have been fabricated by using the poly(p-phenylenevinylene)-based copolymers with 10 C long aliphatic chains as the electroluminescent layers, PBD in PMMA and Alq(3) as the electron-transporting layers, and aluminum as the cathode. The multilayer structure devices show 190 cd/m(2) light-emitting brightness at 460 nm, 15 V turn-on vol- tage. It is found that the intensities of photoluminescence and electroluminescence (EL) increase with increasing aliphatic chain length, the EL intensity and operation stability of these polymer light-emitting diodes can be improved by reasonable design of the structure.

基于二维位置敏感探测器的空间对接过程研究

为了准确地捕捉机器人空间对接的传感器信息,从对接机构的设计入手,研究了空间对接中传感器的选择、改制和基于传感器信息的空间对接问题.考虑到安装空间的限制和处理的信息量太多,提出了利用二维位置敏感探测器(PSD)配合红外发光器阵列的方法完成机器人的空间对接.通过对位置敏感探测器工作原理的分析和对传感器特性的试验,提出了在PSD光敏面上增加光学装置的方法以扩大它的探测范围和精度,同时大大减小了它对光信号的依赖程度.把该方法应用于可重构模块化探测机器人系统中,提出了基于传感器信息的轨迹规划方法,对子机器人空间对接过程的仿真试验验证了轨迹规划和空间对接的可行性.

Phosphor-conversion white light using InGaN ultraviolet laser diode

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the blue and yellow regions when excited by the n-UV and blue light, respectively.The relationship of the luminous flux and the luminous efficacy of the white light with injection current was discussed. The luminous flux increased linearly with increasing current above the threshold of the laser diode, and at 80 mA injection current, the luminous flux and luminous efficacy were estimated to be 5.7 lm and 13 lm/w, respectively. The shift of the Commission International de I'Eclairage coordinates, color temperature, and color rendering index with current are very slight and negligible, which indicates that the blue and the yellow phosphors have an excellent stability and a highly stable white light can be obtained by this way. (c) 2008 American Institute of Physics.

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

White light emission from fiber pigtailed laser module

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emit in the yellow. The InGaN laser diode was coupled to an optical fiber firstly and the phosphor was excited by the laser light output from the fiber. At 350 mA injection current the luminous flux and the luminous efficacy was 73 lm and 42.7 lm/W, respectively. The luminance was estimated to be 50 cd/mm(2). The relationship of the luminous flux and the luminous efficacy of the white light with injection current were measured and discussed.

Analysis on the high luminous flux white light from GaN-based laser diode

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

Blue electroluminescent polymers with dopant-host systems and molecular dispersion features: polyfluorene as the deep blue host and 1,8-naphthalimide derivative units as the light blue dopants

We developed a series of highly efficient blue electroluminescent polymers with dopant-host systems and molecular dispersion features by selecting 1,8-naphthalimide derivatives as the light blue emissive dopant units, choosing polyfluorene as the deep blue emissive polymer host and covalently attaching the dopant units to the side chain of the polymer host. The polymers' EL spectra exhibited both deep blue emission from the polymer host and light blue emission from the dopant units because of the energy transfer and charge trapping from the polymer host to the dopant units.

Red-Emitting Polyfluorenes Grafted with Quinoline-Based Iridium Complex: "Simple Polymeric Chain, Unexpected High Efficiency"

A series of red-light emitting electrophosphorescent polyfluorenes (PFs) with varying content of a quinoline-based iridium complex, (PPQ)(2)Ir(acac) (bis(2,4-diphenylquinolyl-N,C-2') iridium(acetylacetonate)), in the side chain are synthesized by Suzuki polycondensation. Because of the efficient Forster energy transfer from the PF main chain to (PPQ)(2)Ir(acac) and direct charge trapping on the complex, the electroluminescent emission from PF is nearly completely quenched, even though the amount of iridium complex I incorporated into the polymers is as low as 1 mol %. Based on a single-layer device configuration, a luminous efficiency of up to 5.0 cd A(-1) with a luminance of 2000 cd m(-2) and Commission Internationale de L'Eclairage coordinates of (0.63, 0.35) (x, y) is realized, which is far superior to that of previously reported red-light emitting PFs containing benzothiazole- and isoquinoline-based iridium complexes.

Highly efficient green-emitting phosphorescent iridium dendrimers based on carbazole dendrons

Green-emitting iridium dendrimers with rigid hole-transporting carbazole dendrons are designed, synthesized, and investigated. With second-generation dendrons, the photoluminescence quantum yield of the dendrimers is up to 87% in solution and 45% in a film. High-quality films of the dendrimers are fabricated by spin-coating, producing highly efficient. non-doped electrophosphorescent organic light-ernitting diodes (OLEDs). With a device structure of indium tin oxide/poly(3,4-ethylenedioxythiopheiie):poly(styrene sulfonic acid)/neat dendrimer/1,3,5-tris(2-N-phenylbenzimidazolyl)benzene/LiF/Al, a maximum external quantum efficiency (EQE) of 10.3% and a maximum luminous efficiency of 34.7 cd A(-1) are realized. By doping the dendrimers into a carbazole-based host, the maximum EQE can be further increased to 16.6%. The integration of rigid hole-transporting dendrons and phosphorescent complexes provides a new route to design highly efficient solution-processable dendrimers for OLED applications.

Defect influence on luminescence efficiency of GaN-based LEDs

Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved.

A novel photonic crystal vertical cavity surface emitting laser based on coherent coupling

We demonstrate a novel oxide confined GaAs-based photonic crystal vertical cavity surface emitting laser (PC-VCSEL) operating at a wavelength of 850 nm based on coherent coupling. A ring-shaped light-emitting aperture is added to the conventional PC-VCSEL, and coherent coupling is achieved between the central defect aperture and the ring-shaped light-emitting aperture. Measurements show that under the continuous-wave (CW) injected current of 20 mA, a high power of 2 mW is obtained, and the side mode suppression ratio (SMSR) is larger than 20 dB. The average divergence angle is 4.2 degrees at the current level of 20 mA. Compared with the results ever reported, the divergence angle is reduced.

Electroluminescence of hole block material caused by electron accumulation and hole penetration

In this study, we investigated the electroluminescence (EL) mechanisms and processes of hole block material in the multilayer devices with Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) doped CBP (4,4'-N,N'-dicarbazolebiphenyl) as the light-emitting layer (EML). First, the hole block ability of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was experimentally confirmed by comparing the EL spectra. With increasing hole injection, BCP emission emerges and increases gradually due to the increasing hole penetration from EML into the hole block layer (HBL).

Blue-light emission of mesoporous SBA-15 covalently bonded with carbazole chromophore

Much attention has been paid to carbazole derivatives for their potential applications as optical materials. For the first time, the blue-light-emitting carbazole chromophore has been covalently bonded to the ordered mesoporous SBA-15 (The resultant hybrid mesoporous materials are denoted as carbazole-SBA-15) by co-condensation of tetraethoxysilane (TEOS) and prepared compound 3-[N-3-(triethoxyilyl)propyl]ureyl-9-ethyl-carbazole (denoted as carbazole-Si) in the presence of Pluronic P123 surfactant. The results of H-1 NMR and Fourier transform infrared (FTIR) reveal that carbazole-Si has been successfully synthesized.

Mechanisms of efficiency enhancement in the doped electroluminescent devices based on a europium complex

In this study, we investigated the dependence of electroluminescence (EL) efficiency on carrier distribution in the light-emitting layer (EML) of the device based on Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1, 10-phenanthroline) doped 4,4'-N,N'-dicarbazole- biphenyl (CBP) system. We found that EL efficiency increases monotonously with increasing hole injection even when holes are the majority carriers. This phenomenon was attributed to the accumulation of holes in EML, which improves the balance of holes and electrons on Eu(TTA)(3)phen molecules, thus enhancing the EL efficiency.

Solution-Processable Carbazole-Based Conjugated Dendritic Hosts for Power-Efficient Blue-Electrophosphorescent Devices

A novel class of hosts suitable for solution processing has been developed based on a conjugated dendritic scaffold. By increasing the dendron generation, the highest occupied molecular orbital (HOMO) energy level can be tuned to facilitate hole injection, while the triplet energy remains at a high level, sufficient to host high-energy-triplet emitters. A power-efficient blue-electrophosphorescent device based on H2 (see figure) is presented.