Self-assembly of the pre-formed inclusion complexes between cyclodextrins and alkanethiols on gold electrodes

A new kind of self-assembled monolayer (SAM) formed in aqueous solution through the pre-formed inclusion complexes (abbreviated CD . C-n) between alpha-, beta-cyclodextrins (CDs) and alkanethiols (CH3(CH2)(n-1)SH, n = 10, 14 and 18) was prepared successfully on gold electrodes. High-resolution H-1 NMR was used to confirm the formation of CD . C-n. X-ray photoelectron spectroscopy, cyclic voltammetry and chronoamperometry were used to characterize the resulting SAMs (denoted as M-CD . Cn). It was found that M-CD . Cn were more stable against repeated potential cycling in 0.5 M H2SO4 than SAMs of CH3(CH2)(n-1)SH (denoted as M-Cn), with a relative sequence of Mbeta-CD . Cn > Malpha-CD . Cn > M-Cn. In addition, an order of blocking the electron transfer between gold electrodes and redox couples (both Fe(CN)(6)(3-) and Ru(NH3)(6)(3+)) in solution, M-CD . C10 > M-CD . C14 > M-CD . C18, was observed. A plausible explanation is provided to elucidate some of the observations. (C) 1997 Elsevier Science S.A.

K+ sensors based on supported alkanethiol/phospholipid bilayers

A novel kind of K+ sensor with valinomycin-incorporated bilayers supported on a gold electrode consisting of self-assembled alkanethiol monolayers (SAMs) and a lipid monolayer has been fabricated successfully. The lipid monolayer is deposited on the alkylated surface of the first alkanethiol monolayer through three different methods, such as the Langmuir-Blodgett (LB) technique, painted method and painted-frozen method. The response of K + sensors produced by a painted or painted-frozen lipid monolayer on an alkanethiol alkylated gold electrode is larger than that by the LB method, which is due to the difference in fluidity of the three kinds of bilayers. Selectivity coefficients KK+, Na+, KK+, Li+, KK+, Ca2+ and KK+, Mg2+ are 10(-4), 10(-4), 2 x 10(-5) and 3 x 10(-5) respectively, and there is no obvious difference among different fabricating methods. A linear response toward the potassium ion was found in the range from 10(-1) M to 10(-5) M with the detection limit of 10(-6) M. The sensor has a slope of 60 mV per decade. Meanwhile, the longevity of the sensor was improved obviously for at least two months at about -10 degrees C. The higher stability shows the possibility to fabricate a practical biosensor.

Supported phospholipid membranes: Comparison among different deposition methods for a phospholipid monolayer

Supported lipid membranes consisting of self-assembled alkanethiol and lipid monolayers on gold substrates could be produced by three different deposition methods: the Langmuir-Blodgett (L-B) technique, the painted method, and the paint-freeze method, By using cyclic voltammetry, chronoamperometry/chronocoulometry and a.c. impedance measurements, we demonstrated that lipid membranes prepared by these three deposition methods had obvious differences in specific capacitance, resistance and thickness. The specific capacitance of lipid membranes prepared by depositing an L-B monolayer on the alkanethiol alkylated surfaces was 0.53 mu Fcm(-2), 0.44 mu Fcm(-2) by the painted method and 0.68 mu Fcm(-2) by the paint-freeze method. The specific conductivity of lipid membranes prepared by the L-B method was over three times lower than that of the painted lipid membranes, while that of the paint-freeze method was the lowest. The difference among the three types of lipid membranes was ascribed to the influence of the organic solvent in lipid films and the changes in density of the films. The lipid membranes prepared by the usual painted method contained a trace amount of the organic solvent. The organic solvent existing in the hydrocarbon core of the membrane reduced the density of the membrane and increased the thickness of the membrane. The membrane prepared by depositing an L-B monolayer containing no solvent had higher density and the lowest fluidity, and the thickness of the membrane was smaller. The lipid membrane prepared by the paint-freeze method changed its structure sharply at the lower temperature. The organic solvent was frozen out of the membrane while the density of the membrane increased greatly. All these caused the membrane to exist in a ''tilted'' state and the thickness of this membrane was the smallest. The lipid membrane produced by the paint-freeze method was a membrane not containing organic solvent. This method was easier in manipulation and had better reproducibility than that of the usual painting method and the method of forming free-standing lipid film. The solvent-free membrane had a long lifetime and a higher mechanical stability. This model membrane would be useful in many areas of scientific research.

A Nanomechanical Device Based on Light-Driven Proton Pumps

In this paper, a hybrid device based on a microcantilever interfaced with bacteriorhodopsin (bR) is constructed. The microcantilever, on which the highly oriented bR film is self-assembled, undergoes controllable and reversible bending when the light-driven proton pump protein, bR, on the microcantilever surface is activated by visible light. Several control experiments are carried out to preclude the influence of heat and photothermal effects. It is shown that the nanomechanical motion is induced by the resulting gradient of protons, which are transported from the KCl solution on the cytoplasmic side of the bR film towards the extracellular side of the bR film. Along with a simple physical interpretation, the microfabricated cantilever interfaced with the organized molecular film of bR can simulate the natural machinery in converting solar energy to mechanical energy.

Friction and Wear Studies of Octadecyltrichlorosilane SAM on Silicon

A self-assembled monolayer of octadecyltrichlorosilane (OTS) was prepared on a single-crystal silicon wafer (111) and its tribological properties were examined with a one-way reciprocating tribometer. The worn surfaces and transfer film on the counterface were analyzed by means of scanning electron microscopy and X-ray photoelectron spectroscopy. The results show that, due to the wear of the OTS monolayer and the formation of the transfer film on the counterpart ball, the friction coefficient gradually increases from 0.06 to 0.13 with increasing sliding cycles and then keeps stable at a normal load of 0.5N. The transfer film is characterized by deposition, accumulation, and spalling at extended test duration. Though low friction coefficients of the monolayer in sliding against steel or ceramic counterfaces are recorded, poor load-carrying capacity and antiwear ability are also shown. Moreover, the monolayer itself or the corresponding transfer film on the counterface fails to lubricate even at a normal load of 1.0 N. Thus, the self-assembled monolayer of octadecyltrichlorosilane can be a potential boundary lubricant only at very low loads.

Large Scale Fabrication Of Periodical Bowl-Like Micropatterns Of Single Crystal Zno

Nanostructured ZnO materials are of great significance for their potential applications in photoelectronic devices, light-emitting displays, catalysis and gas sensors. In this paper, we report a new method to produce large area periodical bowl-like micropatterns of single crystal ZnO through aqueous-phase epitaxial growth on a ZnO single crystal substrate. A self-assembled monolayer of polystyrene microspheres was used as a template to confine the epitaxial growth of single crystal ZnO from the substrate, while the growth morphology was well controlled by citrate anions. Moreover, it was found that the self-assembled monolayer of colloidal spheres plays an important role in reduction of the defect density in the epitaxial ZnO layer. Though the mechanism is still open for further investigation, the present result indicates a new route to suppress the dislocations in the fabrication of single crystal ZnO film. A predicable application of this new method is for the fabrication of two-dimensional photonic crystal structures on light emitting diode surfaces.

Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix

Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as the active region. The ultrawide emitting spectrum of 142 nm was achieved. The short migration length of indium adatoms on AlGaAs surface increases the size dispersion of InAs QDs, resulting in the broadening of optical gain spectrum.

Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot

We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g((2))(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.

Fabrication and optical characterization of GaN-based nanopillar light emitting diodes

InGaN/GaN-multiple-quantum-well-based light emitting diode ( LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence ( PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl ( HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.

Small SiGe quantum dots obtained by excimer laser annealing

In this paper, we obtain SiGe quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of Si0.77Ge0.23 strained films. Under the excimer laser annealing, only surface atoms diffusion happens. From the detailed statistical information about the size and shape of the quantum dots with different annealing time, it is shown that the as-grown self-assembled quantum dots, especially the {105}-faceted dots, are not stable and disappear before the appearance of the laser-induced quantum dots. Based on the calculation of surface energy and surface chemical potential, we show that the {103}-faceted as-grown self-assembled quantum dots are more heavily strained than the {105}-faceted ones, and the heavy strain in the dot can decrease the surface energy of the dot facets. The formation of the laser-induced quantum dots, which is also with heavy strain, is attributed to kinetic constraint. (c) 2008 Elsevier B.V. All rights reserved.

High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.

Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition

The effects of annealing on the optical properties of InAs/GaAs quantum dots (QDs) grown under different conditions by metalorganic chemical vapor deposition (MOCVD) are studied. A lower QD growth rate leads to an earlier and faster decrease of QD photoluminescence (PL) intensity with increasing annealing temperature. which is proposed to be related to the increased QD two-dimensional (2D)-three-dimensional (3D) transition critical layer thickness at low QD growth rate. High-quality GaAs cap layers grown at high temperature and a low deposition rate are shown to decrease the blueshift of the QDs' emission wavelength significantly during in-situ I h annealing experiments, which is important for the fabrication of long-wavelength InAs/GaAs QD lasers by MOCVD technique. (C) 2009 Elsevier B.V. All rights reserved.

Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots

We study the structure, optical and magnetic characteristics of self-assembled (In,Cr) As diluted magnetic semiconductor quantum dots as a function of the As-4 flux. Increasing the surface energy by increasing the As4 pressure leads to a smaller number of larger dots for a higher As-4 flux. The remanent magnetization measured at 5K also increases with increasing As-4 flux, which is attributed to the enhancement of the effective Cr content due to the As-4-rich condition. We explore the possibility of tailoring magnetism by controlling the As-4/In flux ratio without changing the Cr concentration. Furthermore, extremely low-density QDs have also been successfully grown. Copyright (C) EPLA, 2008

Size distributions of quantum islands on stepped substrates

The size distributions of self-assembled quantum islands on stepped substrates are studied using kinetic Monte Carlo simulations. It is found that the energy barrier E-SW between the step and the terrace region is the key factor in affecting the size distribution of islands. With small E-SW (<= 0.1 eV), lines of uniform islands can be obtained at relative low surface coverage. As the surface coverage is increased, wirelike islands can be obtained. Scaling behavior is obeyed for the size distributions of the wirelike islands. When the size distributions are separated into their width and length components, however, scaling is only observed in the length distribution of the wirelike islands. With larger E-SW, the size distribution of islands shows a clear bimodal size distribution and anomalous growth temperature dependent island size evolutions are observed. The simulation results reproduce qualitatively the phenomena observed in the cases of InAs islands grown on stepped GaAs substrates. (c) 2009 American Institute of Physics. [doi:10.1063/1.3248367]