溶胶-凝胶法制备ZnO纳米薄膜的工艺和应用

ZnO是一种重要的功能材料和新型的n一Ⅵ族宽禁带半导体材料。采用溶胶一凝胶(sol-gel)工艺在si(100)、si(111)和c面蓝宝石衬底上成功制备出高质量的ZnO纳米薄膜，并用XRD、SEM、AFM等方法研究了薄膜的特性。首次以制备的ZnO纳米薄膜为缓冲层，在n型si(1()o)衬底上采用低压化学气相沉积(LPCVD)工艺外延生长了SiC薄膜，得到了低载流子浓度、高电子迁移率和高空穴迁移率的两种SiC薄膜样品，分析了该薄膜的性能。

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.