The radio counter-jet of the QSO 3C 48

We present multi- frequency radio observational results of the quasar 3C 48. The observations were carried out with the Very Large Array ( VLA) at five frequencies, 0.33, 1.5, 4.8, 8.4, and 22.5 GHz, and with the Multi- Element Radio Linked Interferometer Network ( MERLIN) at the two frequencies of 1.6 and 5 GHz. The source shows a one- sided jet to the north within 1", which then extends to the northeast and becomes diffuse. Two bright components ( N2 and N3), containing most of the flux density, are present in the northern jet. The spectral index of the two components is alpha(N2) similar to -0.99 +/- 0.12 and alpha(N3) similar to - 0.84 +/- 0.23 ( S proportional to nu(alpha)). Our images show the presence of an extended structure surrounding component N2, suggestive of strong interaction between the jet and the interstellar medium ( ISM) of the host galaxy. A steep- spectrum component, labelled S, located 0.25 " southwest to the flat- spectrum component which could be the core of 3C 48, is detected at a significance of > 15 sigma. Both the location and the steepness of the spectrum of component S suggest the presence of a counter- jet in 3C 48.

黄土丘陵区油松天然次生林林窗特征与更新动态

研究了黄土丘陵区油松天然次生林林窗的形状、大小结构、分布、形成木特征及其更新状况.结果表明:在油松天然次生林中,林冠林窗(CG)和扩展林窗(EG)面积均呈以小林窗为主的偏态分布.CG平均面积为31.15 m2,以20~40 m2林窗的数量比和面积比最大,分别为38.24%和30.50%;EG平均面积为58.04 m2,以30~60 m2的数量比和面积比最大,分别为36.77%和27.79%,且CG的平均面积占EG平均面积的53.67%;林窗形状多呈椭圆形,高度多在14~16 m;林窗形成年龄以10~20年为主,占33.82%.林窗中基折和枯立木分别占形成木总数的47.66%和23.44%.林窗形成的主要因素是人为间伐或盗伐,树木衰老等引起的抗性下降、干旱、病虫害等也是导致树木死亡的原因之一;每个林窗中平均有1.89个形成木,其中以2株形成木的林窗最多.林窗形成木主要是油松,其次为山杨、白桦和辽东栎等.形成木的径级呈明显的偏态分布,以10~20 cm和21~30 cm径级最为普遍,分别占总数的25.0%和45.31%,与林窗面积偏态分布吻合;林窗内林木的更新状况好于林下,且油松幼苗不存在断层,而油松林下幼苗在年...

金属络合物的快原子轰击质谱研究

本文应用快原子轰击质谱和亚稳跃迁研究了盐、冠醚稀土络合物、异辛基膦酸单异辛酯及其金属络合物的质谱碎裂行为。结果表明：（I）离子型盐类化合物的FABMS中的特征离子为：（1）[e·Mat+n·M-(mn-DH]~+ (2)[M+Mat-Cm-1)+n·R]~+(3)[M+e·TEA-(m-1)H+a·MXm]~+。这些离子形成于液相反应和气相碎裂；（II）冠醚稀土络合物的FABMS中存在着稀土冠醚络离子、冠醚系列离子、稀土盐系列离子及硝酸根系列负离子。气相中的离子与溶液中的离子有一定的对应关系；（III）异辛基膦酸单异辛酯的快原子轰击质谱显示丰度较大的二聚体离子，它直观地反映了该化合物液相的二聚状态。其铜盐的FABMS给出该化合物的分子离子（M~+和M~-）及准分子离子（[M+2H]~+、(M+H)~-、(M-H)~-和[M-WH~-]）。稀土络合物则得到准分子离子[M+H]~+，在高于分子离子的质量端还存在系列离子[M·（HL）_n+H]~+(n=1,2,3)这些化合物的质谱特征与溶液中的平衡有一定的对应关系。另外，本文还对络合物快原子轰击下的氧化还原过程进行了讨论。

MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON

The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two.

PHOTOVOLTAIC EFFECT AND ITS POLARITY IN SI DOPING SUPERLATTICES

We have studied the photovoltaic effects in Si doping superlattices (nipi) under different excitation conditions with and without additional cw optical biasing using a He-Ne laser. On the basis of the photovoltaic theory of carrier spatial separation in superlattices, we propose the concept of spatial fixity of the photovoltage polarity in type-II superlattices and examine the experimental results. The photovoltaic effect in Si nipi is found mainly from the direct transitions related with shallow impurities in real space, not the electron-hole band-to-band process as in GaAs nipi.

PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS

A high energy shift of the band-band recombination has been observed in the photoluminescence (PL) spectra of the strained InP epilayer on GaAs by metalorganic chemical vapor deposit. The strain determined by PL peak is in good agreement with calculated thermal strain. The surface photovoltalic spectra gives the information about energy gap, lattice mismatching, and composition of heteroepilayers, diffusion length, surface, and interface recombination velocity of minority carriers of heteroepitaxy layers.

PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF INP ON GAAS SUBSTRATE GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

A high-energy shift of the band-band recombination has been observed in photoluminescence spectra of the strained InP layer grown on GaAs substrate. The InP layer is under biaxial compressive strain at temperatures below the growth temperature, because the thermal expansion coefficient of InP is smaller than that of GaAs. The strain value determined by the energy shift of the band-edge peak is in good agreement with the calculated thermal strain. A band to carbon acceptor recombination is also identified.