Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.

Theoretical and experimental investigations of flexural wave propagation in periodic grid structures designed with the idea of phononic crystals

The propagation characteristics of fiexural waves in periodic grid structures designed with the idea of phononic crystals are investigated by combining the Bloch theorem with the finite element method. This combined analysis yields phase constant surfaces, which predict the location and the extension of band gaps, as well as the directions and the regions of wave propagation at assigned frequencies. The predictions are validated by computation and experimental analysis of the harmonic responses of a finite structure with 11 × 11 unit cells. The fiexural wave is localized at the point of excitation in band gaps, while the directional behaviour occurs at particular frequencies in pass bands. These studies provide guidelines to designing periodic structures for vibration attenuation.

Wet etching and infrared absorption of AlN bulk single crystals

The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm~(-2) is observed on the (0001) A1 surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.

Characterization of Phosphorus Diffused ZnO Bulk Single Crystals

Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy （XPS）, photoluminescence spectroscopy （PL）, and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.

Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO4 and Nd:YAG lasers

Ultrashort pulses were generated in passively mode-locked Nd:YAG and Nd:GdVO4 lasers pumped by a pulsed laser diode with 10-Hz repetition rate. Stable mode-locked pulse trains were produced with the pulse width of 10 ps. The evolution of the mode-locked pulse was observed in the experiment and was discussed in detail. Comparing the pulse evolutions of Nd:YAG and Nd:GdVO4 lasers, we found that the buildup time of the steady-state mode-locking with semiconductor saturable absorber mirrors (SESAMs) was relevant to the upper-state lifetime and the emission cross-section of the gain medium.

Flash-lamp-pumped picosecond Nd:YAG regenerative amplifier

A flash-lamp-pumped Nd

Applicatioo of Pade Approximation in Simulating Photonic Crystals

To save finite-difference time-domain(FDTD) computing time, several methods are proposed to convert the time domain FDTD output into frequency domain. The Padé approximation with Baker's algorithm and the program are introduced to simulate photonic crystal structures. For a simple pole system with frequency 160THz and quality factor of 5000,the intensity spectrum obtained by the Padé approximation from a 28-item sequence output is more exact than that obtained by fast Fourier transformation from a 220-item sequence output. The mode frequencies and quality factors are calculated at different wave vectors for the photonic crystal slab from a much shorter FDTD output than that required by the FFT method,and then the band diagrams are obatined. In addition,mode frequencies and Q-factors are calculated for photonic crystal microcavity.

电光腔倒空激光二极管抽运Nd∶YAG锁模激光器

设计了一个简单的直腔,将电光腔倒空与激光二极管端面抽运Nd∶YAG半导体可饱和吸收镜锁模激光器结合,实现了锁模脉冲的产生、放大和输出。在连续抽运功率5 W的条件下,获得了脉冲宽度为11 ps的锁模单脉冲输出和脉冲宽度为200 ns的调Q脉冲输出,腔倒空单脉冲能量为30 nJ,重复频率为10 Hz。连续锁模运转时单个锁模脉冲的能量约为2 nJ,利用腔倒空将单脉冲的能量提高了15 倍左右。文章详细讨论了腔倒空脉冲及调Q脉冲的产生机理,并分析了加在电光晶体上的高压电脉冲以及偏振片的偏振度对腔倒空脉冲及调Q脉冲的影响。

激光二极管侧面抽运Nd∶YAG锁模激光器的研究

利用谐振腔的稳定条件对激光二极管侧面抽运的Nd∶YAG锁模直腔的稳区特性和谐振腔内的光斑分布进行了分析。根据对腔参量的分析，选取合适的腔参量设计了一个简单的侧面抽运直腔，该谐振腔腔形简单，没有像散，振荡光模式好，有利于激光器的锁模运转。实验中采用国内自行研制的半导体可饱和吸收镜，实现了激光二极管侧面抽运半导体可饱和吸收镜锁模Nd∶YAG激光器的连续锁模运转，平均输出功率为2 W，锁模脉冲宽度为10 ps,重复频率为100 MHz。结合实验结果进一步讨论了半导体可饱和吸收镜的一些参量如饱和恢复时间、调制深度等对实现稳定连续锁模的影响。

用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模

制作了一种新型的半导体可饱和吸收镜--表面态型半导体可饱和吸收镜.用表面态型半导体可饱和吸收镜作为被动锁模吸收体实现了半导体端面泵浦Yb∶YAG激光器被动调Q锁模.在泵浦功率仅有1.4 W的情况下,获得了调Q锁模脉冲序列,锁模平均输出功率1 mW,锁模脉冲重复频率200 MHz.

连续波500 W全固态Nd∶YAG激光器研究

研制了全国产化全固态半导体激光器(LD)抽运模块，Nd∶YAG激光输出功率达500 W。介绍了优化抽运模块结构参数的程度。从增益分布特性等方面，介绍了研究其输入-输出功率特性的实验装置，随着抽运功率的增加，Nd∶YAG激光输出以斜率效率47%线性增加，最大输出功率达到575 W，光-光转换效率达26.1%。采用He-Ne激光探测法实验测量了该抽运模块中的热透镜效应。通过测量热焦距，分析了其热透镜效应

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.