Optimization of control parameters for petroleum waste composting

Composting is being widely employed in the treatment of petroleum waste. The purpose of this study was to find the optimum control parameters for petroleum waste in-vessel composting. Various physical and chemical parameters were monitored to evaluate their influence on the microbial communities present in composting. The CO2 evolution and the number of microorganisms were measured as the activity of composting. The results demonstrated that the optimum temperature, pH and moisture content were 56.5 - 59.5 degreesC, 7.0 - 8.5 and 55 % - 60%, respectively. Under the optimum conditions, the removal efficiency of petroleum hydrocarbon reached 83.29% after 30 days composting.

Ordered Zinc Antimonate Nanoisland Attachment and Morphology Control of ZnO Nanobelts by Sb Doping

Hierarchical heterostructures of zinc antimonate nanoislands on ZnO nanobelts were prepared by simple annealing of the polymeric precursor. Sb can promote the growth of ZnO nanobelts along the [552] direction because of the segregation of Sb dopants on the +(001) and (110) surfaces of ZnO nanobelts. Furthermore, the ordered nanoislands of toothlike ZnSb2O6 along the [001](ZnO) direction and rodlike Zn7Sb2O12 along the [110](ZnO) direction can be formed because of the match relation of the lattice and polar charges between ZnO and zinc antimonate. The incorporation of Sb in a ZnO lattice induces composition fluctuation, and the growth of zinc antimonate nanoislands on nanobelt sides induces interface fluctuation, resulting in dominance of the bound exciton transition in the room temperature near-band-edge (NBE) emission at relatively low excitation intensity. At high excitation intensity, however, Auger recombination makes photogenerated electrons release phonon and relax from the conduction band to the trap states, causing the NBE emission to gradually saturate and redshift with increasing excitation intensity. The green emission more reasonably originates from the recombination of electrons in shallow traps with doubly charged V-O** oxygen vacancies. Because a V-O** center can trap a photoactivated electron and change to a singly charged oxygen vacancy V-O* state, its emission intensity exhibits a maximum with increasing excitation intensity.

Realization of quantum cascade laser operating at room temperature

X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved.

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690 degreesC, and a conventional low-temperature buffer layer deposited at 500 degreesC. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm(2)V(-1)S(-1) for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at E-c-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 mum in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films. (C) 2002 Elsevier Science BN. All rights reserved.

An ambient proof and wide tuning range LC VCO with automatic amplitude control for tuner applications

This paper represents a LC VCO with AAC (Auto Amplitude Control), in which PMOS FETs are used as active components, and the varactors are directly connected to ground to widen Kvco linear range. The AAC circuitry adds little noise to the VCO and provides it with robust performance over a wide temperature and carrier frequency range. The VCO is fabricated in 50-GHz 0.35-mu m SiGe BiCMOS process. The measurement results show that it has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole circuit draws 6.6-mA current from 5.0-V supply.

808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice

808 nm high-power laser diodes are gown by MBE. In the laser structure, the combination of Si-doped GRIN (graded-index) region adjacent to n-AlGaAs cladding layer with reduced Be doping concentration near the active region has been used to diminish Be diffusion and oxygen incorporation. As compared with the laser structure which has undoped GRIN region and uniform doping concentration for Si and Be, respectively, in the cladding layers, the slope efficiency has increased by about 8%. Typical threshold current density of 300 A/cm(2) and the minimum threshold current density of 220 A/cm(2) for lasers with 500 mu m cavity length are obtained. A high slope efficiency of 1.3 W/A for coated lasers with 1000 mu m cavity length is also demonstrated, Recorded CW output power at room temperature has reached 2.3 W.

A 1.1GHz LC VCO with Automatic Amplitude Control for Tuner Applications

This paper presents an LC VCO with auto-amplitude control （AAC）, in which pMOS FETs are used,and the varactors are directly connected to ground to widen the linear range of Kvco. The AAC circuitry adds little noise to the VCO but provides it with robust performance over a wide temperature and carrier frequency range.The VCO is fabricated in a chartered 50GHz 0.35μm SiGe BiCMOS process. The measurements show that it has - 127. 27dBc/Hz phase noise at 1MHz offset and a linear gain of 32.4MHz/V between 990MHz and 1.14GHz.The whole circuit draws 6. 6mA current from 5V supply.

Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers

Room temperature operation is an important criterion for high performance of quantum cascade lasers. A strain-compensated quantum cascade laser（λ≈5.5μm） with optimized waveguide structure lasing at room temperature is reported. Accurate control of layer thickness and strain-compensated material composition is demonstrated using X-ray diffraction. An output power of at least 45mW per facet is realized for a 20μm-wide and 2mm-long laser at room temperature.

Intelligent control of avalanched photodiode to get optimal state

To improve the sensitivity of our laser radar system, we provided a set of control method for APDs (Avalanched Photodiodes) based on single-chip computer together with the circuits dealing with noise and temperature. It adjusts the voltages intelligently and maintains the APD's optimal working status.

Effects of temperature, glucose and inorganic nitrogen inputs on carbon mineralization in a Tibetan alpine meadow soil

High levels of available nitrogen (N) and carbon (C) have the potential to increase soil N and C mineralization We hypothesized that with an external labile C or N supply alpine meadow soil will have a significantly higher C mineralization potential and that temperature sensitivity of C mineralization will increase To test the hypotheses an incubation experiment was conducted with two doses of N or C supply at temperature of 5 15 and 25 C Results showed external N supply had no significant effect on CO2 emission However external C supply increased CO2 emission Temperature coefficient (Q(10)) ranged from 113 to 1 29 Significantly higher values were measured with C than with N addition and control treatment Temperature dependence of C mineralization was well-represented by exponential functions Under the control CO2 efflux rate was 425 g CO2-Cm-2 year(-1) comparable to the in situ measurement of 422 g CO2-Cm-2 year(-1) We demonstrated if N is disregarded microbial decomposition is primarily limited by lack of labile C It is predicted that labile C supply would further increase CO2 efflux from the alpine meadow soil (C) 2010 Elsevier Masson SAS All rights reserved

Morphology control of nanoscale PbS particles in a polyol process

Nanostructured PbS with different morphologies and particle sizes have been prepared through a polyol process. Narrow size distribution for star-shaped, octahedral, tetradecanehedral, and cubic products were achieved by slowly introducing the source materials using a peristaltic pump in the presence of poly(vinylpyrrolidone) (PVP) as additive. Systematic variation of the kinetic factors, including the additive, the reaction temperature, the duration time, the ratio of source materials, the Sulfur sources, and the Pb(Ac)(2)center dot 3H(2)O concentration, reveals that the morphology depends mainly on the supersaturation degree of the free sulfur ions released from thiourea under elevated temperature.

beta-NaYF4 and beta-NaYF4:Eu3+ Microstructures: Morphology Control and Tunable Luminescence Properties

beta-NaYF4 hexagonal microprisms and microrods with different aspect ratios have been prepared via a simple hydrothermal route. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectra as well as kinetic decays were used to characterize the samples. The influences of reaction temperature and the molar ratio of NaF to y(3+) on the crystal phases and shapes of final products have been studied in detail. The aspect ratios of products increase gradually with the increase of reaction temperature and NaF/Y3+ molar ratio. The growth mechanisms of crystals prepared under the different conditions are presented systematically. More importantly, the systematical investigation on the luminescence properties of beta-NaYF4:xEu(3+) (x = 0.5, 1, 2, 3, 5, and 10 mol %) with hexagonally microprismatic morphology shows the characteristic emissions of Eu3+ (D-5(J)-F-7(J'), J, J' = 0, 1, 2, 3). Under the excitation of single wavelength light of 397 nm, the luminescence colors of the corresponding products can be tuned feasibly from bluish white to yellow to red by changing the doping concentration of Eu3+.

Control led/living free-radical copolymerization of 4-(azidocarbonyl) phenyl methacrylate with methyl acrylate under Co-60 gamma-ray irradiation

A new vinyl acyl azide monomer, 4-(azidocarbonyl) phenyl methacrylate, has been synthesized and characterized by NMR and FTIR spectroscopy. The thermal stability of the new monomer has been investigated with FTIR and thermal gravimetry/differential thermal analysis (TG/DTA), and the monomer has been demonstrated to be stable below 50 degrees C in the solid state. The copolymerizations of the new monomer with methyl acrylate have been carried out at room temperature under Co-60 gamma-ray irradiation in the presence of benzyl 1-H-imidazole-1-carbodithioate. The results show that the polymerizations bear all the characteristics of controlled/living free-radical polymerizations, such as the molecular weight increasing linearly with the monomer conversion, the molecular weight distribution being narrow (< 1.20), and a linear relationship existing between In([M](0)/[M]) and the polymerization time. The data from H-1 NMR and FTIR confirm that no change in the acyl azide groups has occurred in the polymerization process and that acyl azide copolymers have been obtained. The thermal stability of the polymers has also been investigated with TG/DTA and FTIR.