Status and trends of short pulse generation using mode-locked lasers based on advanced quantum-dot active media

In this review, the potential of mode-locked lasers based on advanced quantum-dot ( QD) active media to generate short optical pulses is analysed. A comprehensive review of experimental and theoretical work on related aspects is provided, including monolithic-cavity mode-locked QD lasers and external-cavity mode-locked QD lasers, as well as mode-locked solid-state and fibre lasers based on QD semiconductor saturable absorber mirrors. Performance comparisons are made for state-of-the-art experiments. Various methods for improving important characteristics of mode-locked pulses such as pulse duration, repetition rate, pulse power, and timing jitter through optimization of device design parameters or mode-locking methods are addressed. In addition, gain switching and self-pulsation of QD lasers are also briefly reviewed, concluding with the summary and prospects.

Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved.

Growth and characterization of InGaAs/InAlAs quantum cascade lasers

The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material system are investigated. Pronounced intersubband absorption from stacked active region of QC structure is used to monitor the wavelength of QC laser and disclose the material quality. The precise control of the epilayer thickness and the good quality of interfaces are demonstrated by the abundant narrow satellite peaks of X-ray diffraction. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 5.1-5.2 mum up to 300 K. For 10 x 800 mum(2) laser device, peak output power of similar to7.2 mW and threshold current density of 3 kA/cm(2) at room temperature are obtained. For some devices, if keep the peak output powers at the similar to2 mW level, quasi-continuous wave operation at room temperature persists more than 1 h are recorded. (Q) (C) 2001 Elsevier Science Ltd. All rights reserved.

High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy

GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown by solid-source molecular beam epitaxy. N is introduced by a home-made de-active plasma source. Incorporation of N into InGaAs decreases the bandgap significantly. The highest N concentration of 2.6% in a GaInNAs/GaAs QW is obtained, corresponding to the photoluminescence (PL) peak wavelength of 1.57 mum at 10 K. The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations. Rapid thermal annealing at 850 degrees C could significantly improve the crystal quality of the QWs. An optimum annealing time of 5s at 850 degrees C was obtained. The GalnNAs/GaAs SQW laser emitting at 1.2 mum exhibits a high characteristic temperature of 115 K in the temperature range of 20 degrees C- 75 degrees C.

Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers

A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors

The growth of GalnNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 mum at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 mum GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.

Small signal equivalent circuit model of vertical cavity surface emitting lasers

Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given in this paper. The modulation properties of VCSEL are simulated using this model in Pspice program. The simulation results are good agree with experiment data. Experiment is performed to testify the circuit model.

Low-threshold conjugated polymer distributed feedback lasers on InP substrate

We demonstrate a low threshold polymer solid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure. The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) doped polystyrene (PS) and formed by drop-coating method. The second order Bragg scattering region on the InP substrate gave rise to strong feedback, thus a lasing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd: YAG pulsed laser. The devices show a laser threshold as low as 7 nJ/pulse.

An extension of the Quasicontinuum Treatment of Multiscale Solid Systems to Nonzero Temperature

Covering the solid lattice with a finite-element mesh produces a coarse-grained system of mesh nodes as pseudoatoms interacting through an effective potential energy that depends implicitly on the thermodynamic state. Use of the pseudoatomic Hamiltonian in a Monte Carlo simulation of the two-dimensional Lennard-Jones crystal yields equilibrium thermomechanical properties (e.g., isotropic stress) in excellent agreement with ``exact'' fully atomistic results.

Influences of Hydration Force and Elastic Strain Energy on the Stability of Solid Film in a Very Thin Solid-on-Liquid Structure

Since hydration forces become very strong at short range and are particularly important for determining the magnitude of the adhesion between two surfaces or interaction energy, the influences of the hydration force and elastic strain energy due to hydration-induced layering of liquid molecules close to a solid film surface on the stability of a solid film in a solid-on-liquid (SOL) nanostructure are studied in this paper. The liquid of this thin SOL structure is a kind of water solution. Since the surface forces play an important role in the structure, the total free energy change of SOL structures consists of the changes in the bulk elastic energy within the solid film, the surface energy at the solid-liquid interface and the solid-air interface, and highly nonlinear volumetric component associated with interfacial forces. The critical wavelength of one-dimensional undulation, the critical thickness of the solid film, and the critical thickness of the liquid layer are studied, and the stability regions of the solid film have been determined. Emphasis is placed on calculation of critical values, which are the basis of analyzing the stability of the very thin solid film.