38 resultados para pure spinors


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We suggest a different practical scheme for the direct detection of pure spin current by using the two-color Faraday rotation of optical quantum interference process (QUIP) in a semiconductor system. We demonstrate theoretically that the Faraday rotation of QUIP depends sensitively on the spin orientation and wave vector of the carriers, and can be tuned by the relative phase and the polarization direction of the omega and 2 omega laser beams. By adjusting these parameters, the magnitude and direction of the spin current can be detected.

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The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multiple quantum wells grown by metal-organic chemical-vapor deposition was investigated by the cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. It is found that the misfit dislocations generated from strain relaxation are all pure-edge threading dislocations with burgers vectors of b=1/3<11 (2) over bar0>. The misfit dislocations arise from the strain relaxation due to the thickness of strained layer greater than the critical thickness. The relaxation of strained layer was mainly achieved by the formation of dislocations and localization of In, while the dislocations changed their slip planes from {0001} to {10 (1) over bar0}. With the increasing temperature, the efficiency of photoluminescence decrease sharply. It indicates that the relaxation of the misfit strain has a strong effect on optical efficiency of film. (C) 2004 American Institute of Physics.

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A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 degrees C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model. (c) 2005 American Institute of Physics.

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Deposition of 1000 eV pure carbon ions onto Si(001) held at 800 degrees C led to direct nucleation of diamond crystallites, as proven by high-resolution transmission electron microscopy and electron energy loss spectroscopy. Molecular dynamic simulations show that diamond nucleation in the absence of hydrogen can occur by precipitation of diamond clusters in a dense amorphous carbon matrix generated by subplantation. Once the diamond clusters are formed, they can grow by thermal annealing consuming carbon atoms from the amorphous matrix. The results are applicable to other materials as well.

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Within the Buttiker dephasing model, the backscattering in the dephasing process is eliminated by setting a proper boundary condition. Explicit expression is carried out for the effective total tunneling probability in the presence of multiple pure dephasing scatterers with partial coherence. The derived formula is illustrated analytically by various limiting cases, and numerically for its application in tunneling through multibarrier systems.

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The asymmetric spin distribution in k space caused by the pure spin current (PSC) can introduce a photoexcited charge current (PECC). This provides us a practical scheme for direct detection of PSC. We demonstrate theoretically that the PECC related to the PSC depends sensitively on the wave vector and spin orientation of the carriers, more important, the helicity dependence of this PECC provides us a way to refine it from the helicity independent background current by tuning the polarized laser beams from left to right circular polarization.

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The vortex solutions of various classical planar field theories with (Abelian) Chern-Simons term are reviewed. Relativistic vortices, put forward by Paul and Khare, arise when the Abelian Higgs model is augmented with the Chern-Simons term. Adding a suitable sixth-order potential and turning off the Maxwell term provides us with pure Chern-Simons theory, with both topological and non-topological self-dual vortices, as found by Hong-Kim-Pac, and by Jackiw-Lee-Weinberg. The non-relativistic limit of the latter leads to non-topological Jackiw-Pi vortices with a pure fourth-order potential. Explicit solutions are found by solving the Liouville equation. The scalar matter field can be replaced by spinors, leading to fermionic vortices. Alternatively, topological vortices in external field are constructed in the phenomenological model proposed by Zhang-Hansson-Kivelson. Non-relativistic Maxwell-Chern-Simons vortices are also studied. The Schrodinger symmetry of Jackiw-Pi vortices, as well as the construction of some time-dependent vortices, can be explained by the conformal properties of non-relativistic space-time, derived in a Kaluza-Klein-type framework. (c) 2009 Elsevier B.V. All rights reserved.

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An amorphous photoluminescent material based on a dithienylbenzothiadiazole structure has been used for the fabrication of organic red-light-emitting diodes. The synergistic effects of the electron-transport ability and exciton confinement of the emitting material allow for the fabrication of efficient pure-red-light-emitting devices without a hole blocker.

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A circular system is employed in this paper to investigate the swelling behaviors of polyampholyte hydrogels; this circular system can effectively eliminate the disturbance of various factors and keep the surrounding environment constant. It is found that there exists a spontaneous volume transition to the collapsed state of polyampholyte hydrogels, which is attributed to the overshooting effect, and the transition can occur repeatedly under certain conditions. C-13 NMR is employed to investigate the swelling behavior of polyampholyte hydrogels.

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The extraction behavior of Ce(IV) along with Th(IV) and Ln(III) (Ln = Ce, Gd, Yb) nitrate by pure ionic liquid, [C(8)mim]PF6, was investigated. [C(8)mim]PF6 alone showed good extraction ability for Ce(IV), while it was slight for Th(IV) and negligible for Ln(III). The extraction behavior of Ce(IV) by [C(8)mim]PF6 was particularly studied, and the most probable extraction mechanism proposed was the anion exchange mechanism. Moreover, the stripping of Ce(IV) from IL phase was also investigated. The Ce(IV) in IL phase can be quantitatively recovered by water.

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Light-emitting diodes exhibiting efficient pure-white-light electroluminescence have been successfully developed by using a single polymer: polyfluorene derivatives with 1,8-naphthalimide chromophores chemically doped onto the polyfluorene backbones. By adjusting the emission wavelength of the 1,8-naphthalimide components and optimizing the relative content of 1,8-naphthalimide derivatives in the resulting polymers, white-light electroluminescence from a single polymer, as opposed to a polymer blend, has been obtained in a device with a configuration of indium tin oxide/poly(3,4-ethyleiledioxythiophene)(50 nm)/polymer(80 nm)/Ca(10 nm)/Al(100 nm). The device exhibits Commission Internationale de I'Eclairage coordinates of (0.32,0.36), a maximum brightness of 11900 cd m(-2), a current efficiency of 3.8 cd A(-1), a power efficiency of 2.0 lm W-1. an external quantum efficiency of 1.50 %, and quite stable color coordinates at different driving voltages, even at high luminances of over 5000 cd m(-2).

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This article applied [HEH(HEP)] (2-ethyhexyldrogen-2-ethylhexyl phosphonate)extraction chromatography to separate 14 rare earth impurities from ultra-highly pure Er2O3 and Ho2O3, and then the impurities were determined by atomic emission spectrometry. The average percentage recovery for each element is in the range of 70%similar to 140%. The relative standard deviations of the determination are +/-3.3%similar to 2.2%. This method can be applied to the determination of the trace amounts of rare eath impurities in Er2O3 and Ho2O3 with a purity of 99.999 9%-99.999 99%.