Write-once blue laser recording using silicon doped SbOx thin films prepared by reactive dc-magnetron sputtering

Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

A feasible approach to optical-electrical hybrid data storage using phase change material

We present our experimental results supporting optical-electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser- irradiated Ge2Sb2Te5. lms exhibits an abrupt change of four orders of magnitude ( from 10 7 to 10 3./ sq) with increasing laser power, current- voltage curves of the amorphous area and the laser- crystallized dots, measured by a conductive atomic force microscope ( C- AFM), show that their resistivities are 2.725 and 3.375 x 10- 3., respectively, the surface current distribution in the. lms also shows high and low resistance states. All these results suggest that the laser- recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical electrical hybrid data storage possible.

Structure and properties of amorphous thin film for optical data storage

In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. (c) 2007 Elsevier B.V. All rights reserved.

Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier

The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density.

Superresolution, extended focal depth or focal shift with electrically controllable radial birefringent filter

In this paper an electrically controllable radial birefringent pupil filter is proposed. It consists of two polarizers and an improved electrically controllable optical azimuth rotator which has two lambda/4 retarders, one electro-optical crystal and one radial birefringent crystal. The evolution and distribution of polarization states of this pupil filter are discussed. The most interesting and useful advantage of such a structure is that the characteristic of transverse superresolution and axial extended focal depth or focal shift can be obtained merely by controlling the applied voltage on the electro-optical crystal. The radial birefringent crystal azimuth angle cooperating with different electrical inductive phase differences will determine the transverse and axial intensity distribution. It is shown that for particular ranges of electrical inductive phase difference it is possible to obtain transverse superresolution along with extended focal depth or with a focal shift.

模块化蓝光光存储性能静态测试系统

蓝光光存储是信息存储领域发展的一个重要方向。测试系统是研究蓝光光存储材料的必备条件，为建立蓝光光存储研究平台，设计和搭建了一套模块化蓝光光存储性能静态测试系统。激光工作波长为406．7nm。系统采用调制解调技术降低系统噪声，提高测量粘度：采用光点移动模式降低对样品尺寸的要求；采用纳米平台提高记录点的反复定位性能。实验结果证明测试系统性能良好，可以满足蓝光光存储性能静态测试要求。

Synthesis of nickel(II) complexes of alpha-isoxazolylazo-beta-diketones and their absorption of spin-coating films and thermal properties for HD-DVD-R

Three kinds of new nickel(II) complexes of alpha-isoxazolylazo-beta-diketones with blue-violet light absorption were synthesized. Their structures were postulated based on elemental analysis, MS and FT-IR spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. The absorption properties and thermal stability of these complexes were discussed. The static optical recording test for high density digital versatile disc-recordable (HD-DVD-R) system was also studied. (c) 2005 Elsevier B.V. All rights reserved.

GdFeCo／TbFeCo磁超分辨磁光记录薄膜研究

用磁控溅射法制备了GdFeCo／TbFeCo交换耦合两层薄膜，利用不同温度的克尔磁滞回线和VSM磁滞回线研究了读出层（GdFeCo）变温磁化方向变化过程．结果表明，随温度升高读出层从平面磁化转变为垂直磁化，交换耦合两层薄膜具有中心孔探测磁超分辨的基本性能．转变过程主要受饱和磁化强度（Ms）的影响，在GdFeCo的补偿温度附近，读出层的磁化强度较小，退磁场能也较小，在交换耦合的作用下，使读出层（GdFeCo）的磁化方向发生转变．磁化方向的转变在75℃～125℃的温度范围内变化较快．

光纤耦合波长复用的全息光盘存储记录

详细描述了用光纤耦合、波长复用的全息光盘仔储光路．指出在全息光盘驱动器即将市场化的今天．由于其光路简单、光学元件较少、性价比高．很有可能成为新的全息光盘驱动器的核心技术之一。由于短波长单模光纤及其双波长光纤分束器件的要求比较高．而用多模光纤进行准单模输出调整．以及用分光棱镜进行光束的分光．同时用对双波长敏感的光致聚合物材料进行存储．其光谱灵敏度均匀．光谱范围互不重叠。实验结果表明．光路结构合理．存储效果良好。

氧化物记录介质在光存储中的应用及其研究进展

系统总结了用于光存储记录层的氧化物薄膜的存储机理、存储特性以及最新进展，讨论了氧化物掺杂对提高存储性能的影响，指出了氧化物薄膜存在的不足，并探讨了可能的改善途径。在此基础上对存储材料的发展趋势及氧化物材料的研究前景进行了展望。

利用等效层的消偏振宽带减反膜设计

分析了倾斜入射条件下导致光学薄膜产生偏振的原因, 针对不同偏振态的等效导纳与等效相位进行了分析, 并计算了对称膜层在45°入射条件下不同偏振态的等效折射率与等效相位厚度, 采用等效层方法设计了光学性能良好的600～900 nm波段消偏振宽带减反膜。最后利用电子束蒸发技术制备了薄膜样品, 样品的光谱性能完全能够满足使用要求。其中在600～900 nm波段范围内, 平均反射率均小于1.38%, 反射率的偏振度均低于0.89％。另外, 通过对其理论及实验光学性能、角度敏感性、膜层厚度误差敏感性等方面的分析结果可

Absorption characteristic and nonvolatile holographic recording in LiNbO3 : Cr : Cu crystals

The absorption characteristic of lithium niobate crystals doped with chromium and copper (Cr and Cu) is investigated. We find that there are two apparent absorption bands for LiNbO3:Cr:Cu crystal doped with 0.14 wt.% Cr2O3 and 0.011 wt.% CuO; one is around 480 nm, and the other is around 660 nm. With a decrease in the doping composition of Cr and an increase in the doping composition of Cu, no apparent absorption band in the shorter wavelength range exists. The higher the doping level of Cr, the larger the absorbance around 660 nm. Although a 633 nm red light is located in the absorption band around 660 nm, the absorption at 633 nm does not help the photorefractive process; i.e., unlike other doubly doped crystals, for example, LiNbO3:Fe:Mn crystal, a nonvolatile holographic recording can be realized by a 633 nm red light as the recording light and a 390 nm UV light as the sensitizing light. For LiNbO3:Cr:Cu crystals, by changing the recording light from a 633 nm red light to a 514 nm green light, sensitizing with a 390 nm UV light and a 488 nm blue light, respectively, a nonvolatile holographic recording can be realized. Doping the appropriate Cr (for example, N-Cr = 2.795 X 10(25)m(-3) and N-Cr/N-Cu = 1) benefits the improvement of holographic recording properties. (c) 2005 Optical Society of America.

Refractive-index change and sensitivity improvement in holographic recording in LiNbO3:Ce:Cu crystals with green light

Nonvolatile holographic recording is performed with green light in LiNbO3:Ce:Cu crystals. The refractive-index change and the recording sensitivity are times better than those obtained by recording with red light, and higher optical fixing efficiency is obtained. Correspondingly, theoretical investigations are given.

Vectorial solution of Kukhtarev equations for doubly doped crystals and optimal choice of recording directions in nonvolatile holographic storage

Vectorial Kukhtarev equations modified for the nonvolatile holographic recording in doubly doped crystals are analyzed, in which the bulk photovoltaic effect and the external electrical field are both considered. On the basis of small modulation approximation, both the analytic solution to the space-charge field with time in the recording phase and in the readout phase are deduced. The analytic solutions can be easily simplified to adapt the one-center model, and they have the same analytic expressions given those when the grating vector is along the optical axis. Based on the vectorial analyses of the band transport model an optimal recording direction is given to maximize the refractive index change in doubly doped LiNbO3:Fe: Mn crystals. (c) 2007 Optical Society of America.

A new photopolymerizable holographic recording material based on acrylamide and N-hydroxymethyl acrylamide

A new polyvinylalcohol-based photopolymeric holographic recording material has been developed. The recording is obtained by the copolymerization of acrylamide and N-hydroxymethyl acrylamide. Diffraction efficiencies near 50% are obtained with energetic exposure of 80mJ/cm(2). N-hydroxymethyl acrylamide can improve the optical quality of the film. With the increase of the concentration of N-hydroxymethyl acrylamide, the flatness of the film increases, scattering reduces and the straight image is clearer with a small distortion. The postexposure effect on the grating is also studied. The diffraction efficiency of grating increases further during postexposure, gradient of monomer exists after exposure.