多飞行器协调航迹规划方法

针对多飞行器的协调航迹规划展开研究，提出了一种基于协同进化的多飞行器协调航迹规划算法。在该算法中，不同飞行器的潜在航迹形成它们自己的子种群，并在于种群内部进化。不同飞行器间的协调关系由航迹的评价函数来实现。同时，通过使用特定的染色体表示方法和进化算子，该算法可以有效利用各种环境信息，处理各种航迹约束，并实时地生成三维航迹。

一种针对运动目标的飞行器航迹搜索算法

鉴于目前大部份的航迹规划方法研究都局限于静止目标，提出了一种针对运动目标的飞行器航迹规划方法。该算法借鉴自学习实时A～*搜索的思想，将飞行器的运动与航迹搜索结合在一起，可以对目标的每一步移动实时作出反映。通过在限定的时间内扩大寻优范围，该算法不但可以满足实时在线应用的要求，而且可以有效地避免不可行区域，并使生成的航迹更加优化。实验结果表明，本文算法能有效地处理各种航迹约束，实时地生成满意的三维航迹。

动态环境中的飞行器实时三维航迹规划方法研究

本文提出了一种新的飞行器三维航迹规划方法—SDS。该方法能够在具有预先未知威胁的飞行环境中在线实时航迹规划。当飞行器上装备的探测器探测到飞行环境中有预先未知的威胁出现时，根据探测到的信息及时更新威胁数据。SDS根据新环境信息局部修正受到影响的航迹段来获得新的全局最优航迹。在每一时刻考虑当前已知的信息下，SDS生成的航迹是满足要求的最优航迹。

Facile route to fabricate large-scale silver microtubes

Large-scale uniform Ag microtubes with high length diameter ratios have been first successfully synthesized by a facile approach, using low-cost super fine glass fibers as templates. The samples were characterized by SEM and XRD. The investigations showed that calcining or adding of PEG-1000 and alcohol could greatly improve the mechanical strength of the sample. Especially the products exhibited favorable catalytic properties during the degradation of Rhodamine B by NaBH4. (c) 2007 Elsevier B.V. All rights reserved.

EV共聚物序列结构的~(13)C NMR研究

本工作以EV共聚物为研究对象，明确地提出了共聚物的序列结构与其~(13)C NMR谱，包括符号表示在内的一致性问题。通过对EVAc共聚物~(13)C NMR谱的分析认为，共聚物的序列结构与其~(13)C NMR谱之间存在着某种内在的联系。我们从EV共聚物序列结构的符号表示和Bovey关系出发，阐述了它们之间的一致性，即一一对应关系，并发现了EV共聚物~(13)C NMR谱的两种类型，提出了利用取代基参数进行EV共聚物~(13)C NMR谱分类的判别标准及其衍生出的两种判别方法，阐述了关于EV共聚物~(13)C NMR谱峰分布的预见性。

FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP

Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole-Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission mte from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.

DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15-500 eV and temperature range of 25-800-degrees-C has been studied. The work was carried out using mass-separated C+ and CH3+ ions under ultrahigh vacuum. The films were characterized with x-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and transmission electron diffraction analysis. In the initial stage of the deposition, carbon implanted into silicon induced the formation of silicon carbide, even at room temperature. Further carbon ion bombardment then led to the formation of a carbon film. The film properties were sensitive to the deposition temperature but not to the ion energy. Films deposited at room temperature consisted mainly of amorphous carbon. Deposition at a higher temperature, or post-deposition annealing, led to the formation of microcrystalline graphite. A deposition temperature above 800-degrees-C favored the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation in these films was observed.