Diode-pumped Yb : GSO femtosecond laser

Compact femtosecond laser operation of Yb:Gd2SiO5 (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb: GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1 similar to 100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW. (c) 2007 Optical Society of America.

Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser

A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz.

Passive stabilization of a passively mode-locked Nd : GdVO4 laser by inverse saturable absorption

A diode-pumped Nd:GdVO4 laser mode-locked by a semiconductor saturable absorber and output coupler (SESAOC) is passively stabilized to suppress Q-switched mode-locking. A phase mismatched 131130 second-harmonic generation (SHG) crystal is used for passive stabilization. The continuous wave mode-locking (CWML) threshold is reduced and the pulse width is compressed. The pulse width is 6.5 ps as measured at the repetition rate of 128 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

LD side-pumped high beam quality passive Q-switched and mode-locked Nd:YAG laser based on SESAM

We report a LD side-pumped fundamental-mode (Mx(2) = 1.35 and My(2) = 1.27) passive Q-switched and mode-locked Nd:YAG laser based on a semiconductor saturable absorber mirror (SESAM). At a pump current of 12.5 A, the average output power of 5.68 W with 80 kHz repetition rate and 2 mu s pulse width of the Q-switched envelope was generated. The repetition rate of the mode-locked pulse within the Q-switched envelope of 88 MHz was achieved.

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

Ridge waveguide laser integrated with spot-size converter in a single step epitaxial for high coupling efficiency to single-mode fibres

A 1.55-mum laser diode integrated with a spot-size converter was fabricated in a single step epitaxial by using the conventional photolithography and chemical wet etching process. The device was constructed by a conventional ridge waveguide active layer and a larger passive ridge-waveguide layer. The threshold current was 40 mA together with high slope efficiency of 0.24 W/A. The beam divergence angles in the horizontal and vertical directions were as small as 12.0degrees x 15.0degrees, respectively, resulting in about 3.2-dB coupling losses with a cleaved optical fibre.

High energy ion implantation enhanced intermixed quantum well structures and their absorption characteristics in passive optical waveguides

We have shown that high energy ion implantation enhanced intermixing (HE-IIEI) technology for quantum well (QW) structures is a powerful technique which can be used to blue shift the band gap energy of a QW structure and therefore decrease its band gap absorption. Room temperature (RT) photoluminescence (PL) and guided-wave transmission measurements have been employed to investigate the amount of blue shift of the band gap energy of an intermixed QW structure and the reduction of band gap absorption, Record large blue shifts in PL peaks of 132 nm for a 4-QW InGaAs/InGaAsP/InP structure have been demonstrated in the intermixed regions of the QW wafers, on whose non-intermixed regions, a shift as small as 5 nm is observed. This feature makes this technology very attractive for selective intermixing in selected areas of an MQW structure. The dramatical reduction in band gap absorption for the InP based MQW structure has been investigated experimentally. It is found that the intensity attenuation for the blue shifted structure is decreased by 242.8 dB/cm for the TE mode and 119 dB/cm for the TM mode with respect to the control samples. Electro-absorption characteristics have also been clearly observed in the intermixed structure. Current-Voltage characteristics were employed to investigate the degradation of the p-n junction in the intermixed region. We have achieved a successful fabrication and operation of Y-junction optical switches (JOS) based on MQW semiconductor optical amplifiers using HE-IIEI technology to fabricate the low loss passive waveguide. (C) 1997 Published by Elsevier Science B.V.

Origin and Pathway of Equatorial 13 degrees C Water in the Pacific Identified by a Simulated Passive Tracer and Its Adjoint

The origin and pathway of the thermostad water in the eastern equatorial Pacific Ocean, often referred to as the equatorial 13 degrees C Water, are investigated using a simulated passive tracer and its adjoint, based on circulation estimates of a global general circulation model. Results demonstrate that the source region of the 13 degrees C Water lies well outside the tropics. In the South Pacific, some 13 degrees C Water is formed northeast of New Zealand, confirming an earlier hypothesis on the water's origin. The South Pacific origin of the 13 degrees C Water is also related to the formation of the Eastern Subtropical Mode Water (ESTMW) and the Sub-Antarctic Mode Water (SAMW). The portion of the ESTMW and SAMW that eventually enters the density range of the 13 degrees C Water (25.8 < sigma(theta) < 26.6 kg m(-3)) does so largely by mixing. Water formed in the subtropics enters the equatorial region predominantly through the western boundary, while its interior transport is relatively small. The fresher North Pacific ESTMW and Central Mode Water (CMW) are also important sources of the 13 degrees C Water. The ratio of the southern versus the northern origins of the water mass is about 2 to 1 and tends to increase with time elapsed from its origin. Of the total volume of initially tracer-tagged water in the eastern equatorial Pacific, approximately 47.5% originates from depths above sigma(theta) = 25.8 kg m(-3) and 34.6% from depths below sigma(theta) = 26.6 kg m(-3), indicative of a dramatic impact of mixing on the route of subtropical water to becoming the 13 degrees C Water. Still only a small portion of the water formed in the subtropics reaches the equatorial region, because most of the water is trapped and recirculates in the subtropical gyre.

Numerical Analysis of a Dual Polarization Mode-Locked Laser with a Quarter Wave Plate

Dynamical behaviors and frequency characteristics of an active mode-locked laser with a quarter wave plate (QWP) are numerically studied by using a set pf vectorial laser equation. Like a polarization self-modulated laser, a frequency shift of half the cavity mode spacing exists between the eigen-modes in the two neutral axes of QWP. Within the active medium, the symmetric gain and cavity structure maintain the pulse's circular polarization with left-hand and right-hand in turn for each round trip. Once the left-hand or right-hand circularly polarized pulse passes through QWP, its polarization is linear and the polarized direction is in one of the directions of i45o with respect to the neutral axes of QWP. The output components in the directions of i45" from the mirror close to QWP are all linearly polarized with a period of twice the round-trip time.

Hierarchy of structure functions for passive scalars advected by turbulent flows

A hierarchical model is proposed for the joint moments of the passive scalar dissipation and the velocity dissipation in fluid turbulence. This model predicts that the joint probability density function (PDF) of the dissipations is a bivariate log-Poisson. An analytical calculation of the scaling exponents of structure functions of the passive scalar is carried out for this hierarchical model, showing a good agreement with the results of direct numerical simulations and experiments.

Direct Numerical Simulation of Passive Scalar in Decaying Compressible Turbulence

The passive scalars in the decaying compressible turbulence with the initial Reynolds number (defined by Taylor scale and RMS velocity) Re=72, the initial turbulent Mach numbers (defined by RMS velocity and mean sound speed) Mt=0.2-0.9, and the Schmidt numbers of passive scalar Sc=2-10 are numerically simulated by using a 7th order upwind difference scheme and 8th order group velocity control scheme. The computed results are validated with different numerical methods and different mesh sizes. The Batchelor scaling with k(-1) range is found in scalar spectra. The passive scalar spectra decay faster with the increasing turbulent Mach number. The extended self-similarity (ESS) is found in the passive scalar of compressible turbulence.

Finite Element Solutions for Plane Strain Mode I Crack with Strain Grading Effect

In this paper, a new phenomenological theory with strain gradient effects is proposed to account for the size dependence of plastic deformation at micro- and submicro-length scales. The theory fits within the framework of general couple stress theory and three rotational degrees of freedom omega(i) are introduced in addition to the conventional three translational degrees of freedom mu(i). omega(i) is called micro-rotation and is the sum of material rotation plus the particles' relative rotation. While the new theory is used to analyze the crack tip field or the indentation problems, the stretch gradient is considered through a new hardening law. The key features of the theory are that the rotation gradient influences the material character through the interaction between the Cauchy stresses and the couple stresses; the term of stretch gradient is represented as an internal variable to increase the tangent modulus. In fact the present new strain gradient theory is the combination of the strain gradient theory proposed by Chen and Wang (Int. J. Plast., in press) and the hardening law given by Chen and Wang (Acta Mater. 48 (2000a) 3997). In this paper we focus on the finite element method to investigate material fracture for an elastic-power law hardening solid. With remotely imposed classical K fields, the full field solutions are obtained numerically. It is found that the size of the strain gradient dominance zone is characterized by the intrinsic material length l(1). Outside the strain gradient dominance zone, the computed stress field tends to be a classical plasticity field and then K field. The singularity of stresses ahead of the crack tip is higher than that of the classical field and tends to the square root singularity, which has important consequences for crack growth in materials by decohesion at the atomic scale. (C) 2002 Elsevier Science Ltd. All rights reserved.

Mode I and Mode II Crack Tip Asymptotic Fields with Strain Gradient Effects

The strain gradient effect becomes significant when the size of fracture process zone around a crack tip is comparable to the intrinsic material length l, typically of the order of microns. Using the new strain gradient deformation theory given by Chen and Wang, the asymptotic fields near a crack tip in an elastic-plastic material with strain gradient effects are investigated. It is established that the dominant strain field is irrotational. For mode I plane stress crack tip asymptotic field, the stress asymptotic field and the couple stress asymptotic field can not exist simultaneously. In the stress dominated asymptotic field, the angular distributions of stresses are consistent with the classical plane stress HRR field; In the couple stress dominated asymptotic field, the angular distributions of couple stresses are consistent with that obtained by Huang et al. For mode II plane stress and plane strain crack tip asymptotic fields, only the stress-dominated asymptotic fields exist. The couple stress asymptotic field is less singular than the stress asymptotic fields. The stress asymptotic fields are the same as mode II plane stress and plane strain HRR fields, respectively. The increase in stresses is not observed in strain gradient plasticity for mode I and mode II, because the present theory is based only on the rotational gradient of deformation and the crack tip asymptotic fields are irrotational and dominated by the stretching gradient.